A5065614319- Ferroelectric and Negative Capacitance Devices
- Ferroelectric and Piezoelectric Materials
- Semiconductor materials and devices
- MXene and MAX Phase Materials
- Advanced Memory and Neural Computing
- Multiferroics and related materials
- Advancements in Semiconductor Devices and Circuit Design
- Electronic and Structural Properties of Oxides
- Magnetic and transport properties of perovskites and related materials
- Acoustic Wave Resonator Technologies
- Low-power high-performance VLSI design
- Semiconductor materials and interfaces
- Nonlinear Dynamics and Pattern Formation
- Advanced Condensed Matter Physics
- Copper Interconnects and Reliability
- Neuroscience and Neural Engineering
- Physical Unclonable Functions (PUFs) and Hardware Security
- Chaos-based Image/Signal Encryption
- Neural Networks and Reservoir Computing
East China Normal University
2022-2024
Chinese Academy of Sciences
2019-2023
University of Chinese Academy of Sciences
2019-2023
Institute of Microelectronics
2019-2023
State Key Laboratory on Integrated Optoelectronics
2022
Henan University
2018-2020
Atomic-resolution Cs-corrected scanning transmission electron microscopy revealed local shifting of two oxygen positions (OI and OII) within the unit cells a ferroelectric (Hf0.5Zr0.5)O2 thin film. A reversible transition between polar Pbc21 antipolar Pbca phases, where crystal structures 180° domain wall phase cell structure were identical, was induced by applying appropriate cycling voltages. The critical field strength that determined whether film would be woken up or fatigued ~0.8 MV/cm,...
Abstract HfO 2 ‐based ferroelectric materials are promising candidates for next‐generation nonvolatile memories. Since the first report on Si‐doped thin film in 2011, it has been confirmed that various dopants can induce ferroelectricity films, and “wake‐up” effect films with different deposited by processes studied extensively. Recent developments wake‐up of doped presented. Aside from differences between their deposition methods, electrodes used a capacitor, which determine nature...
Ferroelectric materials with a perovskite structure have various shortcomings, including poor Si compatibility, large physical thickness, and small bandgap. HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based ferroelectric provide new solution for semiconductor devices. -ZrO solid (HZO) thin films been widely studied due to their low crystallization temperature wide stoichiometric range. Considering its cost flexible deposition...
Hafnia-based ferroelectric tunnel junctions (FTJs) show potential applications in memory, logic, and neuromorphic computation. However, the tunneling electroresistance (TER) effect of FTJs faces great challenge due to weakened polarization as layer thickness scales down. Here, we report a giant TER 2 × 107 Hf0.5Zr0.5O2 (HZO, 1.5 nm thick)/Nb-doped SrTiO3 (NSTO) heterojunctions. The textured HZO film matches well with NSTO lattice through HZO[001]//NSTO[001], orientation polar axis parallel...
Abstract Resistance modulation of 2D electron gas (2DEG) at oxide heterointerfaces has recently attracted extensive interests in nonvolatile memory and various sensors. Specially, ferroelectric devices based on 2DEG resistance switching by polarization are particularly important light Herein, a memristor is reported the change an LaAlO 3 /SrTiO heterointerface BiFeO layer, showing reversible two order magnitude change, largest ratio free‐lead memristors so far. The mechanisms modulated...
The characterization of ferroelectricity in ultra-thin ferroelectric (FE) films is highly challenging due to enlarged leakage current and resistive switching (RS) effect. In this study, we investigated the polarization properties 1.5-nm thick Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr O xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO) via direct hysteresis remnant polarization/voltage (P-V) loop measurement. To...
In this letter, the endurance performance of TiN/Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr O xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO)/TiN ferroelectric capacitor is significantly improved by increasing N content TiN top electrode. The gas with different flow used in electrode sputter process. Compared to N-deficient capacitor, leakage current density N-rich reduced sixfold (from <inline-formula...
Abstract Ferroelectric hysteresis loop measurement under high driving frequency generally faces great challenges. Parasitic factors in testing circuits such as leakage current and RC delay could result abnormal loops with erroneous remnant polarization ( P r ) coercive field E c ). In this study, positive-up-negative-down (PUND) a wide range was performed on 10-nm thick Hf 0.5 Zr O 2 ferroelectric film. Detailed analysis the conducted switching occurs FE capacitor. After considering time lag...
For the first time, we directly observed lattice dislocation and monoclinic (m-) phase formation in ferroelectric Hf <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</inf> Zr O xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> (HZO) films during fatigue, through spherical aberration (Cs)-corrected transmission electron microscopy (TEM) technique. The main observations are: 1. More oxygen vacancies (Vo) tend to be generated when orthorhombic...
Abstract The stability of remanent polarization ( P r ) during multiple operations is critical for memory applications, as the degradation leads to misreading stored information. In this letter, improved stabilization field cycling in HfZrO 4 (HZO)‐based ferroelectric devices by inserting a ZrO 2 layer reported. This optimization method inspired fact that wake‐up effect HZO not obvious. By layer, which prolongs period, fatigue process postponed. Thus, stabilized achieved cycling. endurance...
For the first time, dynamic process of orthorhombic (o-) phase emergence during rapid thermal annealing in polycrystalline Hf <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</inf> Zr O xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> (HZO) ferroelectric film was directly visualized though in-situ spherical aberration corrected transmission electron microscopy technique. We have following main observations: (1) o-phase nucleates from...
In this work, we demonstrated a novel true random number generator (TRNG) utilizing stochastic short-term recovery of Charge- Trapping (CT) FinFET devices. The bits were generated by measuring the time CT-FinFET with digital counter time-to-digital count converter (TDCC) unit. resulting CT - TRNG circuit shows great immunity against power noise up to 600m V in amplitude and 1.5G Hz frequency across wide range temperatures (-20 85°C). It passed all NIST 800-22 800-90B randomness tests. We...
In this work, we revealed the dynamic process of atomic structure transitions ferroelectric (FE) Hf <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</inf> Zr <sup xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sup> O xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> (HZO) film across Curie temperature ${\mathrm{T}}_{\mathrm{c}}$ in spherical aberration corrected transmission electron microscope (Cs-TEM) with in-situ controlled heating and...
BiFeO3 (BFO), Bi0.92Gd0.08FeO3 (BGFO) and Bi0.92Gd0.08Fe0.95Ni0.05O3 (BGFNO) films are epitaxially grown on 0.7 wt% Nb-SrTiO3 (NSTO) substrates. The strong ferroelectric property in BGFNO film is confirmed by piezoresponse force microscopy (PFM) polarization versus voltage (P-V) measurement. It also found that the Au/BGFNO/NSTO devices possess a resistance switching (RS) effect. Gd- Ni-codoped to strongly enhance on/off ratio. A ratio as large 3 × 106 achieved with an applied pulse of -8 V...
Resistance switching has been observed in double and multi-layer structures of ferroelectric films. The higher ratio opens up a vast path for emerging semiconductor devices. An n-n+ isotype heterojunction fabricated by depositing an oxide SrTiO3 layer on conventional n-type Si (001) substrate (SrTiO3/Si) pulsed laser disposition. Rectification resistive behaviors the SrTiO3/Si were conductive atomic force microscopy, exhibits excellent endurance retention characteristics. possible mechanism...
Hafnia ferroelectric-based Fe-FET devices have attracted increasing interest due to their CMOS compatibility, high scalability and low power consumption. Ge-based Fe-FETs could help overcome the shortcomings of Si-based caused by interface layer. In this work, effect deposition temperature on TiN/Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr O xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Ge device performance is...