A5038547295- GaN-based semiconductor devices and materials
- Semiconductor Quantum Structures and Devices
- Ga2O3 and related materials
- ZnO doping and properties
- Metal and Thin Film Mechanics
- Semiconductor materials and devices
- Advanced Semiconductor Detectors and Materials
- Diamond and Carbon-based Materials Research
- Acoustic Wave Resonator Technologies
- Photocathodes and Microchannel Plates
- Nanowire Synthesis and Applications
- Advanced Photocatalysis Techniques
- Chalcogenide Semiconductor Thin Films
- Silicon Carbide Semiconductor Technologies
- Semiconductor Lasers and Optical Devices
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Quantum Dots Synthesis And Properties
- Plasma Diagnostics and Applications
- High-pressure geophysics and materials
- Silicon Nanostructures and Photoluminescence
- Advanced Surface Polishing Techniques
- Zeolite Catalysis and Synthesis
- Gas Sensing Nanomaterials and Sensors
- Graphene research and applications
Guangxi University
2015-2024
Ocean University of China
2024
Laoshan Laboratory
2024
Hainan Tropical Ocean University
2024
Qilu University of Technology
2024
Dalian University of Technology
2021-2024
Nanjing University
2024
Shandong Academy of Sciences
2024
Kennesaw State University
2021-2023
Southern Polytechnic State University
2021-2023
Hafnium oxide (HfO2) thin films have been made by atomic vapor deposition (AVD) onto Si substrates under different growth temperature and oxygen flow. The effect of conditions on the structure optical characteristics deposited HfO2 film has studied using X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), grazing incidence diffraction (GIXRD) variable angle spectroscopic ellipsometry (VASE). XPS measurements analyses revealed insufficient chemical reaction...
Significant internal quantum efficiency (IQE) enhancement of GaN/AlGaN multiple wells (MQWs) emitting at ~350 nm was achieved via a step well (QW) structure design. The MQW structures were grown on AlGaN/AlN/sapphire templates by metal-organic chemical vapor deposition (MOCVD). High resolution x-ray diffraction (HR-XRD) and scanning transmission electron microscopy (STEM) performed, showing sharp interface the MQWs. Weak beam dark field imaging conducted, indicating similar dislocation...
The effect of carrier localization in InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes is investigated by photoluminescence (PL) and time-resolved PL (TRPL) measurements. results show that two peaks obtained Gaussian fitting both relate to the emission from localized states. By TRPL lifetimes at various energies, depths corresponding In-rich regions quasi-MQWs are obtained. Using a model we proposed, suggest compositional fluctuations In content variation well width responsible...
In this letter, we demonstrate a crack and strain free AlN epilayer with thickness of 10.6 μm grown on pyramidal patterned sapphire substrate by metalorganic chemical vapor deposition. The full width at half maximum the X-ray rocking curve was 165/185 arcsec for (002)/(102) planes, respectively. total threading dislocation density less than 3 × 108 cm−2. evolution coalescence process were probed transmission electron microscopy scanning microscopy. A dual observed, which can effectively...
Ferroelectrics have recently attracted attention as a candidate class of materials for use in photovoltaic devices due to their abnormal effect. However, the current reported efficiency is still low. Hence, it urgent develop narrow-band gap ferroelectric with strong ferroelectricity by low-temperature synthesis. In this paper, perovskite bismuth ferrite BiFeO3 (BFO) thin films were fabricated on SnO2: F (FTO) substrates sol-gel method and they rapidly annealed at 450, 500 550 °C,...
We present the results of optical studies InxGa1−xN alloys (0<x<0.2) grown by metalorganic chemical vapor deposition on top thick GaN epitaxial layers with sapphire as substrates. Photoluminescence (PL) and photoreflectance measurements were performed at various temperatures to determine band gap its variation a function temperature for samples different indium concentrations. Carrier recombination dynamics in alloy studied using time-resolved luminescence spectroscopy. While...
In this work, combined analysis of internal strain effects on optical polarization and quantum efficiency (IQE) were conducted for the first time. Deep ultraviolet light extraction AlGaN multiple wells (MQWs) have been investigated by means polarization-dependent photoluminescence (PD-PL) temperature-dependent (TD-PL). With increase compressive applied to MQWs an underlying n-AlGaN layer, degree (DOP) sample was improved from -0.26 -0.06 leading significant enhancement (LEE) as PL intensity...
An internal quantum efficiency (IQE) as high 39% was achieved with the nonpolar a-plane AlGaN-based multiple wells (MQWs) grown on r-plane sapphire substrate metal organic chemical vapor deposition technology. Evident fourth order X-ray diffraction satellite peak and intense MQW-related exciton emission at a wavelength of 279.2 nm were observed, implying successful growth quality MQWs. It found that employment trimethyl-aluminum (TMAl) flow duty-ratio modulation method played crucial role in...
Prestrained InGaN layers with different indium composition were grown by metalorganic chemical vapor deposition as an interlayer before the growth of InGaN/GaN multiple quantum wells (MQWs) in laser diode structures. The strain relaxation MQWs prestrained was investigated grazing incidence x-ray diffraction method. Comparing to low (about 3%) case, occurred sample high 10%) interlayer. piezoelectric field MQW is also proved be much smaller after inserting a measurement photoluminescence (PL)...
Three dual-wavelength InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) with increasing indium content are grown by metal-organic chemical vapor deposition, which contain six periods of low-In-content MQWs and two high-In-content MQWs. For the three studied samples, their internal efficiency (IQE) shows a rising trend as emission wavelength increases from 406 nm to 430 due suppression carriers escape wells barriers. However, for MQWs, sample IQE falls rapidly further...