A5061124346- Electrostatic Discharge in Electronics
- Integrated Circuits and Semiconductor Failure Analysis
- Pulsed Power Technology Applications
- Advancements in Semiconductor Devices and Circuit Design
- Radio Frequency Integrated Circuit Design
- Electromagnetic Compatibility and Noise Suppression
- RFID technology advancements
- Cryptographic Implementations and Security
- Space Technology and Applications
- Plasma Applications and Diagnostics
- Semiconductor materials and devices
- Health, Medicine and Society
- Satellite Communication Systems
- Plasma Diagnostics and Applications
- Advancements in PLL and VCO Technologies
- Healthcare Systems and Practices
- Spacecraft Design and Technology
- Aerosol Filtration and Electrostatic Precipitation
- VLSI and Analog Circuit Testing
- Semiconductor Quantum Structures and Devices
CEA Gramat
2015-2025
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2017-2025
XLIM
2018
Institut d'Électronique et des Systèmes
2012-2017
CEA Cadarache
2017
CEA Grenoble
2017
The ability of radio-frequency (RF) interference signals to upset or disrupt electronic equipment is a matter concern, and identification the physical mechanisms leading device malfunction prime importance. This paper presents experimental theoretical results analyzes effects large-signal microwave excitation up 2 GHz on several commercial small-signal MOS transistors. For frequencies beyond maximum operating frequency, show RF signal rectification in devices, these are confirmed by SPICE...
This paper deals with the "in band" and "out rectification of a Metal Oxide Semiconductor Field Effect Transistors (MOSFET's) device proposes semi-empirical model to predict effect in all transistor regions. The modeling method is based on two variables Taylor series expansion ID(VGS, VDS) which shows modification drain current due gate Radio-Frequency (RF) voltage. depends transconductance conductance derivatives. When operates non-saturation linear region becomes an important nonlinear...
An intentional focusing of High-Power Microwave (HPM) energy on microelectronic systems can produce effects that will potentially upset or damage the target. However, physical mechanisms at work within device are not often well understood. We provide a detailed understanding involved in common-source Metal Oxide Semiconductor (MOS) transistor inverter when Pulsed Excitation (PME) frequency range from 10 MHz to 1 GHz is applied gate terminal. Our study based measurements current waveforms all...
Discrete low-frequency bipolar transistors are subjected to two types of interferences: CW (continuous wave) and pulsed modulated sine signal. In the goal study electromagnetic immunity integrated circuits, devices biased at low current level. Specific interference frequency bands induce changes in transistor output voltage, even with values out band operation devices. Analysis results obtained under signal injection highlights presence physical phenomena rectification ac crowding....
Based on theoretical and experimental time-domain results, this article analyses large-signal radio-frequency interference (RFI) rectification effects in small-signal low-frequency MOS transistors. Measurements indeed show that beyond the maximum operating frequency, transistors seem to exhibit RFI rectification, which is confirmed, with excellent agreement, by SPICE simulations. Transistors models used these simulations are extracted from measurements, include all parasitic elements...