- Acoustic Wave Resonator Technologies
- Ferroelectric and Piezoelectric Materials
- Mechanical and Optical Resonators
- Advanced MEMS and NEMS Technologies
- Photorefractive and Nonlinear Optics
- Microwave Engineering and Waveguides
- GaN-based semiconductor devices and materials
- Ultrasonics and Acoustic Wave Propagation
- Photonic and Optical Devices
- Radio Frequency Integrated Circuit Design
- Microwave and Dielectric Measurement Techniques
- Full-Duplex Wireless Communications
- Acoustic Wave Phenomena Research
- Advanced Sensor and Energy Harvesting Materials
- Millimeter-Wave Propagation and Modeling
- Wireless Power Transfer Systems
- Energy Harvesting in Wireless Networks
- Optical and Acousto-Optic Technologies
- Advanced ceramic materials synthesis
- Microwave Dielectric Ceramics Synthesis
- Semiconductor Quantum Structures and Devices
- Innovative Energy Harvesting Technologies
- Superconducting and THz Device Technology
- Advanced Photocatalysis Techniques
- Microwave-Assisted Synthesis and Applications
The University of Texas at Austin
2021-2025
Quality and Reliability (Greece)
2024
Xi'an Jiaotong University
2022-2023
Taiyuan University of Technology
2023
University of Illinois Urbana-Champaign
2015-2021
ORCID
2021
Tsinghua University
2014
Synopsys (United States)
2005
Thermo Fisher Scientific (Japan)
1996
This work demonstrates a group of shear horizontal (SH0) mode resonators and filters using lithium niobate (LiNbO3) thin films on silicon carbide (SiC). The single-crystalline X-cut LiNbO3 4H-SiC substrates have been prepared by ion-slicing wafer-bonding processes. fabricated resonator has demonstrated large effective electromechanical coupling (k <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) 26.9% high-quality factor (BodeQ) 1228,...
In this work, we present first-order antisymmetric (A1) mode resonators in 128° Y-cut lithium niobate (LiNbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) thin films with electromechanical coupling coefficients (k <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> as large 46.4%, exceeding the state-of-the-art. The achievable k of A1 LiNbO substrates different orientations is first explored, showing X-axis direction among...
Recent advancements in the field of piezoelectric micro-resonators have produced devices, such as lithium niobate laterally vibrating resonators, with very high electromechanical coupling factors (k <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) and respectable quality (Q). As a result, records figure merit (FoM) for radiofrequency MEMS resonators been broken several times past...
This paper presents a short review of the microwave acoustics area, where exciting material innovations and performance advancements have been made in past decade. The ever-growing demand for more sophisticated passive signal processing functions on-chip has fueled these developments. As result, acoustic devices maintained leadership mobile applications. By evaluating three fundamental parameters, namely electromechanical coupling (k <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...
This paper presents a new class of micro-electro-mechanical system (MEMS) C-band filters for 5G front-ends. The filter is comprised resonators based on the first-order asymmetric Lamb wave (A1) mode in thin film lithium niobate. Two have been demonstrated at 4.5 GHz with sharp roll-off, flat in-band group delay, and spurious-free response over wide frequency range. first design shows fractional bandwidth (FBW) 10%, an insertion loss (IL) 1.7 dB, out-of-band (OoB) rejection -13 compact...
This work presents a new class of microelectromechanical system (MEMS) resonator toward 60 GHz for the fifth-generation (5G) wireless communications. The wide range operating frequencies is achieved by resorting to different orders antisymmetric Lamb wave modes in 400-nm-thick Z-cut lithium niobate thin film. resonance 55 demonstrated this marks highest frequency piezoelectric electromechanical devices. fabricated device shows an extracted mechanical Q 340 and f x product 1.87 × 10 <sup...
This paper reports on the demonstration of a new class super-high frequency (SHF) microelectromechanical system (MEMS) resonators operating in 5 GHz range. SHF resonances have been achieved using first order antisymmetric (A1) mode, which features phase velocity exceeding 10000 m/s ion-sliced and suspended Z-cut Lithium Nio-bate (LiNbO3) thin films. The fabricated device has demonstrated high electromechanical coupling (k <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
This paper presents a review of the radio frequency thin-film lithium niobate (LiNbO3) based acoustic microsystems. Thanks to their high electromechanical coupling (k2), low loss, and great scalability, LiNbO3 has outperformed state-of-the-art technologies in past decade. first reviews wave transduction propagation then showcases emerging applications. Outlook for further platform development more functions is offered future microsystems development.
Summary This work reports a 50.74 GHz lithium niobate (LiNbO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> ) acoustic resonator with high quality factor (Q) of 237 and an electromechanical coupling (k <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> 5.17% resulting in figure merit (FoM, Q•k 12.2. The LiNbO employs novel bilayer periodically poled piezoelectric film (P3F) 128º Y-cut on amorphous silicon (a-Si) sapphire stack to...
In this work, we present a new paradigm for enabling gigahertz higher-order Lamb wave acoustic devices using complementarily oriented piezoelectric (COP) thin films. Acoustic characteristics are first theoretically explored with COP lithium niobate (LiNbO3) films, showing their excellent frequency scalability, low loss, and high electromechanical coupling (k2). resonators delay lines then designed implemented, targeting efficient excitation of waves record-breaking loss. The fabricated...
This paper reports on the demonstrations of first-order antisymmetric Lamb wave (A1) mode resonator as a new platform for front-end filtering fifth-generation (5G) wireless communication. The sub-6 GHz resonance in this work is achieved by employing A1 micromachined V-cut Lithium Niobate (LiNbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) thin films. spurious modes mitigation optimizing distribution electric field. demonstrated...
The performance of inductors at high frequencies and small sizes is one the largest limiting factors in continued miniaturization dc-dc converters. Piezoelectric resonators can have a very quality factor provide an inductive impedance between their series parallel resonant frequencies, making them promising technology for further miniaturizing In this paper we analyze impact resonator parameters on piezoelectric based converter, derive optimal load efficiency limits, impacts varying...
This paper reports an acoustic resonator at 57 GHz with a high electromechanical coupling $(k^{2})$ of 7.3% and 3-dB quality factor (Q) 56, collectively enabling record-breaking Figure merit $(\mathrm{F}\mathrm{o}\mathrm{M},\ Q\cdot k^{2})$ 4.1, order magnitude higher than the state-of-the-art resonators. The device leverages third-order antisymmetric (A3) Lamb mode in 110 nm 128°Y-cut lithium niobate (LiNbO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML"...
This work reports an acoustic filter at 23.5 GHz with a low insertion loss (IL) of 2.38 dB and 3-dB fractional bandwidth (FBW) 18.2%, significantly surpassing the state-of-the-art. The device leverages electrically coupled resonators in 100 nm 128° Y-cut lithium niobate (LiNbO3) piezoelectric thin film, operating first-order antisymmetric (A1) mode. A new film stack, namely transferred thin-film LiNbO3 on silicon (Si) substrate intermediate amorphous (a-Si) layer, facilitates record-breaking...
This paper reports the first piezoelectric acoustic filter in periodically poled film (P3F) lithium niobate (LiNbO3) at 23.8 GHz with low insertion loss (IL) of 1.52 dB and 3-dB fractional bandwidth (FBW) 19.4%. The features a compact footprint 0.64 mm2. third-order ladder is implemented electrically coupled resonators 150 nm bi-layer P3F 128 rotated Y-cut LiNbO3 thin film, operating second-order symmetric (S2) Lamb mode. record-breaking performance enabled by platform, where films...
Piezoelectric resonators are a common building block for signal processing because of their miniature size, low insertion loss, and high quality factor. As consumer electronics push to millimeter waves frequencies, designers must increase the operating frequency resonator. The current state-of-the-art approach is decrease thickness piezoelectric film shorten acoustic wavelength or use higher order modes. Unfortunately, maintaining crystal typically requires thicker layers. Thinner layers...
We present the first group of gigahertz S0 mode low loss and wideband acoustic delay lines (ADLs). The ADLs use a single-phase unidirectional transducers (SPUDT) design to launch propagate in an X-cut lithium niobate thin film with large electromechanical coupling damping. In this work, theoretical performance bounds are investigated, significantly surpassing those state-of-the-art. tradeoffs ADLs, when scaled frequency range, also discussed. fabricated miniature show fractional bandwidth...
This paper reports on the analysis and removal of transverse spurious modes in shear horizontal (SH0) mode lithium niobate (LiNbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) laterally vibrating resonators (LVRs). A length-controlled electrode configuration that employs an optimized overlapping length between adjacent electrodes has been developed to subdue modes. The technique modifies stress electric field distribution resonator...
This paper demonstrates low-loss acoustic delay lines (ADLs) based on shear-horizontal waves in thin-film LiNbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> for the first time. Due to its high electromechanical coupling, mode is suited producing devices with large bandwidths. Here, we show that thin films are also excellent implementing ADLs unidirectional transducers. The reflections and transducer unidirectionality induced by...
This work presents a new class of micro-electro-mechanical system (MEMS) resonators toward Ka band (26.5-40GHz) for fifth-generation (5G) wireless communication. Resonant frequencies 21.4 and 29.9 GHz have been achieved using the fifth seventh order asymmetric (A5 A7) Lamb-wave modes in suspended Z-cut lithium niobate (LiNbO3) thin film. The fabricated device has demonstrated an electromechanical coupling (kt2) 1.5% 0.94% extracted mechanical Qs 406 474 A5 A7 respectively. quality factors...
This paper presents the first demonstration of nanowatt-level CMOS wakeup receiver (WuRx) front ends (FEs) that utilize microelectromechanical system (MEMS)-based matching networks (MNs). The FE uses a fully MEMS-based MN (MMN) operates at 88.8 MHz. It consists large array lithium niobate resonators are fabricated on same die. Measurements integrated WuRx with MMN indicate its loaded voltage gain achieves bandwidth 0.78 MHz quality factor 114. second hybrid (HMN) 457 an aluminum nitride...
This work presents an improved design that exploits dispersion matching to suppress the spurious modes in lithium niobate first-order antisymmetric (A1) Lamb wave mode resonators. The this is achieved by micro-machining thin film balance electrical and mechanical loadings of electrodes. In article, matchings A1 based on different metals are analytically modeled validated with finite-element analysis. fabricated devices exhibit spurious-free responses a quality factor 692 electromechanical...
This work reports a millimeter wave (mmWave) thin-film bulk acoustic resonator (FBAR) in sputtered scandium aluminum nitride (ScAlN). paper identifies challenges of frequency scaling ScAlN into mmWave and proposes stack new fabrication procedure with Sc0.3 Al0.7 N on Al Si carrier wafer. The achieves electromechanical coupling ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${k} ^{2}$...