A5000657583- Radio Frequency Integrated Circuit Design
- Photonic and Optical Devices
- Microwave Engineering and Waveguides
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
- Terahertz technology and applications
- Superconducting and THz Device Technology
- Advancements in PLL and VCO Technologies
- 3D IC and TSV technologies
- Acoustic Wave Resonator Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Electromagnetic Compatibility and Noise Suppression
- Semiconductor Lasers and Optical Devices
- Gyrotron and Vacuum Electronics Research
- Silicon and Solar Cell Technologies
- Millimeter-Wave Propagation and Modeling
- Electrostatic Discharge in Electronics
- Analog and Mixed-Signal Circuit Design
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and interfaces
- Advanced Photonic Communication Systems
- Thin-Film Transistor Technologies
- GaN-based semiconductor devices and materials
- Nanowire Synthesis and Applications
Korea University
2015-2024
Samsung (South Korea)
2023
National Yang Ming Chiao Tung University
2016
University of Seoul
2007
Georgia Institute of Technology
2006
GlobalFoundries (United States)
2002-2005
IBM (United States)
2001-2005
University of Michigan
1997-2003
This paper reports on SiGe NPN HBTs with unity gain cutoff frequency (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> ) of 207 GHz and an f xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> extrapolated from Mason's unilateral 285 GHz. maximum available is 194 Transistors sized 0.12×2.5 μm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> have these characteristics at a linear current 1.0 mA/μm (8.3 ). Smaller transistors...
This work reports on SiGe HBTs with f/sub T/ of 350 GHz. is the highest reported for any Si-based transistor as well bipolar transistor. Associated max/ 170 GHz, and BV/sub CEO/ CBO/ are measured to be 1.4 V 5.0 V, respectively. Also achieved was simultaneous optimization resulting in 270 GHz 260 1.6 5.5 The dependence device performance bias condition dimension has been investigated. Considerations regarding extraction such high values also discussed.
A 300 GHz integrated heterodyne receiver and transmitter for wideband communication imaging applications have been developed in a 250 nm InP double-heterojunction bipolar transistor (DHBT) process. The integrates RF amplifier with balun, down-conversion mixer an IF amplifier, local oscillator, all on single chip. is composed of the identical circuit blocks oscillator addition to up-conversion mixer. Compared previous receivers transmitters reported at above 200 GHz, proposed work includes...
Spin Hall nano-oscillators (SHNOs) exploiting current-driven magnetization auto-oscillation have recently received much attention because of their potential for neuromorphic computing. Widespread applications devices with SHNOs require an energy-efficient method tuning oscillation frequency over broad ranges and storing trained frequencies in without the need additional memory circuitry. While voltage-driven has been demonstrated, it was volatile limited to megahertz ranges. Here, we show...
The reduction of the dislocation density in relaxed SiGe/Si heterostructures using a low-temperature Si(LT-Si) buffer has been investigated. We have shown that 0.1 μm LT-Si reduces threading mismatched Si0.85Ge0.15/Si epitaxial layers as low ∼104 cm−2. Samples were grown by both gas-source molecular beam epitaxy and ultrahigh vacuum chemical vapor deposition.
This letter presents the first demonstration of a silicon-germanium heterojunction bipolar transistor (SiGe HBT) capable operation above one-half terahertz (500 GHz) frequency. An extracted peak unity gain cutoff frequency (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> ) 510 GHz at 4.5 K was measured for 0.12×1.0 μm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> SiGe HBT (352 300 K) breakdown voltage BV/sub CEO/ 1.36 V (1.47...
This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance heterojunction bipolar transistors (HBTs) combined with advanced technology variety passive devices critical for realizing an integrated mixed-signal system-on-a-chip (SoC). reviews process development integration methodology, presents device characteristics, shows how selection were geared toward usage in IC development.
Two fundamental-mode oscillators operating around 300 GHz, a fixed-frequency oscillator and voltage-controlled (VCO), have been developed in this work based on 250-nm InP heterojunction bipolar transistor (HBT) technology. Both adopted the common-base configuration for cross-coupled core, providing higher oscillation frequency compared to conventional common-emitter topology. The fabricated VCO exhibited of 305.8 GHz 298.1-316.1 (18-GHz tuning range) at dc power dissipation 87.4 88.1 mW,...
A record 210-GHz f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> SiGe heterojunction bipolar transistor at a collector current density of 6-9 mA/μm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> is fabricated with new nonself-aligned (NSA) structure based on 0.18 μm technology. This NSA has low-complexity emitter and extrinsic base process which reduces overall thermal cycle minimizes transient enhanced diffusion. low-power...
The relatively less exploited terahertz band possesses great potential for a variety of important applications, including communication applications that would benefit from the enormous bandwidth within spectrum. This paper overviews an approach toward based on SiGe heterojunction bipolar transistor (HBT) technology, focusing broad-band applications. design, characteristics, and reliability HBTs exhibiting record f/sub T/ 375 GHz associated max/ 210 are presented. impact device optimization...
300-GHz direct and heterodyne imagers based on a 0.13-μm SiGe HBT technology were developed for active imaging applications in this work. The imager, which is the square-law principle, shows maximum responsivity of 6121 V/W minimum noise equivalent power (NEP) 21.2 pW/Hz <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1/2</sup> at 315 GHz. consists mixer, local oscillator, an IF amplifier, detector, exhibits 322 kV/W NEP 3.9 300 Total dc...
Product designs for 40-Gb/s applications fabricated from SiGe BiCMOS technologies are now becoming available. In this paper we first briefly discuss heterojunction bipolar transistor (HBT) device operation at high speed, demonstrating that perceived concerns regarding lower BV/sub CEO/ and higher current densities required to operate silicon HBTs such speeds do not in actuality limit design or performance. The high-speed portions of the system then addressed individually. We demonstrate...
This paper presents radio-frequency (RF) characterization and modeling of various wire bond transitions between chips packages. Test modules composed Si alumina packages are fabricated in conductor-backed (CB) structures, they characterized at frequencies up to 20 GHz. It is shown that the parallel plate resonance CB coplanar waveguide (CPW) persists bonding transitions, narrower-ground CPW-CPW show better characteristics than wider-ground transitions. The results three-dimensional full-wave...
This work reports on SiGe HBT technology with f/sub max/ and T/ of 350 GHz 300 GHz, respectively, a gate delay below 3.3 ps. is the highest reported speed for any Si-based transistor in terms combined performance both which exhibit above. Associated BV/sub CEO/ CBO/ are measured to be 1.7 V 5.6 V, respectively. The dependence device bias condition dimension has been investigated. Considerations regarding extraction such high values also discussed.
Scaling has been the principal driving force behind successful technology innovations of past half-century. This paper investigates impacts scaling on SiGe heterojunction bipolar transistors (HBTs), which have recently emerged as a strong contender for RF and mixed-signal applications. The key performance metrics such speed noise are explored, both theory data show that scaling, vertical lateral, mostly beneficial effects these metrics. However, it is shown scaled devices increasingly...
The current level in the modern high-speed SiGe heterojunction bipolar transistors (HBTs) continues to increase for operation speed enhancement, but resultant self-heating and elevated junction temperature emerge as a growing concern device reliability well performance. To address such thermal issues, optimization of HBT structures achieve simultaneous improvements electrical performance is carried out this study. As foundation study, an R/sub th/ measurement method geometry-based fast...
The goal of achieving terahertz (THz) transistors within the silicon material system has generated significant recent interest. In this paper, we use operating temperature as an effective way gaining a better understanding performance limits SiGe HBTs and their ultimate capabilities for THz speeds. Different approaches vertical profile scaling reduction parasitics are addressed, three prototype fourth-generation compared evaluated down to deep cryogenic temperatures, using both dc ac...
Thermal resistance has been measured for high speed SiGe HBTs with various emitter widths and lengths. The smaller devices exhibited higher thermal values, but eventually resulted in lower junction temperature rise a given power density. A physical model developed which showed good agreement the measurements. indicates that depends strongly on deep trench geometry. is also anticipated to increase existence of adjacent due heat dissipation interference, according model.
SiGe HBT transistors achieving over 200 GHz f/sub T/ and MAX/ are demonstrated in this paper. Techniques trends design discussed. Processing techniques available to silicon technologies utilized minimize parasitic resistances capacitances thereby establish raw speeds exceeding III-V devices despite the higher mobility those materials. Higher current densities greater avalanche currents, which required for establishing such high performance, discussed as they relate device self-heating...
The effect of the structural variation device on its thermal resistance was investigated for trench-isolated bipolar transistors. Devices with various number emitter segments and inter-segment spacings several different trench-to-emitter distances were fabricated measured/compared. An analytical model also developed provided a good prediction dependence resistance, exhibiting agreement measurement. 2D simulation performed to obtain detailed temperature distribution inside devices.
A new interstage matching technique has been proposed and successfully applied to a D-band amplifier in 65-nm CMOS technology. The is based on simultaneous conjugate at the interstages of multistage amplifiers two frequencies, resulting an increased bandwidth. six-stage designed this shows peak gain 13.8 dB 113.7 GHz with 3-dB bandwidth 11.2 (110.6-121.8 GHz) without balun loss compensation, while consuming dc power 40 mW. Measured noise figure minimum value 10.8 115 GHz. output P1...
This paper presents the development of an oscillator and a detector based on InP HBT technology operating near 300 GHz, their application to terahertz reflection-mode imaging. The fabricated fundamental-mode common-base (CB) crosscoupled exhibits peak output power 5.3 dBm at 305.8 CB direct shows responsivity higher √ than 40 kV/W noise equivalent lower 35 pW/ Hz for frequency range 270-345 GHz. imaging system employing circuits as signal source was characterized resolution dynamic range,...