A5078353465- ZnO doping and properties
- Copper-based nanomaterials and applications
- Gas Sensing Nanomaterials and Sensors
- Thin-Film Transistor Technologies
- Transition Metal Oxide Nanomaterials
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Silicon Nanostructures and Photoluminescence
- Silicon and Solar Cell Technologies
- Electronic and Structural Properties of Oxides
- Chalcogenide Semiconductor Thin Films
- Integrated Circuits and Semiconductor Failure Analysis
- Ga2O3 and related materials
- Glass properties and applications
- Quantum Dots Synthesis And Properties
- Chemical and Physical Properties of Materials
- Lipid Membrane Structure and Behavior
- Advanced Surface Polishing Techniques
- Polymer Nanocomposite Synthesis and Irradiation
- 3D IC and TSV technologies
- MXene and MAX Phase Materials
- Perovskite Materials and Applications
- Nonlinear Optical Materials Studies
- 2D Materials and Applications
- Dielectric properties of ceramics
Ankara University
2014-2023
University of Kaiserslautern
1987-1991
Motivated by recent experimental observations of Tongay et al. [Tongay al., Nano Letters, 12(11), 5576 (2012)] we show how the electronic properties and Raman characteristics single layer MoSe2 are affected elastic biaxial strain. We found that with increasing strain: (1) E' E" peaks (E1g E2g in bulk) exhibit significant red shifts (up to 30 cm-1), (2) position A1' peak remains at 180 cm-1 (A1g does not change considerably further strain, (3) dispersion low energy flexural phonons crosses...
We have investigated the annealing effect on structural, optical and electrical properties of copper oxide films prepared glass substrates by chemical deposition. The were annealed in air for different temperatures ranging from 200 to 350 °C. X-ray diffraction patterns showed that as-deposited at 250 °C are cuprite structure with composition Cu2O. Annealing 300 converts these CuO. This conversion is accompanied a shift band gap 2.20 eV 1.35 eV. Also this was obtained dc conductivity FTIR...
The current-voltage (I-V) characteristics of Al/TiO2/p-Si metal-insulator-semiconductor (MIS) structures have been investigated in the temperature range 80–300 K. An abnormal decrease zero bias barrier height (BH) (ϕb0) and an increase ideality factor (n) with decreasing explained on basis thermionic emission (TE) theory Gaussian distribution (GD) BHs due to BH inhomogeneities. dependence experimental I-V data has revealed existence a double GD mean values (ϕ¯b0) 1.089 0.622 eV standard...
In this study, the frequency and voltage dependence of dielectric constant (e'), loss (e''), tangent (tan δ), electric modulus (M' M'') ac electrical conductivity (σac) Al/TiO2/p-Si (MOS) structures has been investigated using capacitance–voltage (C–V) conductance–voltage (G/ω–V) characteristics. A TiO2 thin film was deposited on p-type Si substrate by sol–gel dip coating method. These C–V G/ω–V characteristics were measured applying a small signal 50 mV amplitude in range 5 kHz–1 MHz, while...
In this study, we have investigated the intersection behavior of forward bias current–voltage (I–V) characteristics Al/TiO2/p-Si (MIS) structures in temperature range 100–300 K. The I–V curves appears as an abnormality when compared to conventional ideal Schottky diodes and MIS structures. This is attributed lack free charge at a low region, where there no carrier freezing out, which non-negligible temperatures, particular. values calculated from temperature-dependent data exhibit unusual...
We presented the results of optical and electrical studies properties hydrogenated amorphous silicon (a-Si:H) film which was prepared by hot wire method. Using transmittance measurements, dielectric constant a-Si:H determined. The temperature-dependent conductivity measured using two-point probe method in temperature range 115–326 K. It shown that can be well explained nearest-neighbor hopping conduction Efros–Shklovskii variable-range models. A clear transition from mechanism to also...
In this work, TiO2–SnO2 compound thin films was synthesized by the sol–gel technique, and effects of film thickness on optical structural properties these were investigated. Optical constants such as refractive index, extinction coefficient, dielectric constant third-order nonlinear susceptibility determined from measured transmittance spectra in wavelength range 300–1500 nm using envelope method. Meanwhile, dispersion behavior index studied terms single-oscillator Wemple–DiDomenico (W–D)...
The electrical conduction mechanism of undoped and In-doped ZnO thin films is investigated. behavior conductivity consistent with the variable-range hopping mechanism. From experimental data, values density states at Fermi level, distance average energy are obtained. effect these parameters on In doping level discussed. It was found that value increases increasing which reason for rise in films.
Sb-doped SnO2 thin films at different thickness have been grown by sol-gel dip-coating method. All of the exhibit degenerate semiconductor behavior and high free carrier concentrations. In films, electrical transport can be explained reasonably well assuming electron-electron interactions (EEIs) contribution to measured conductivity. Our experimental observations are consistent with theoretical description EEI. The effect on EEI is also discussed. When film reaches 1550 nm, agreement between...
Experiments are supplemented with ab initio density functional theory (DFT) calculations in order to investigate how the structural, electronic and optical properties of zinc oxide (ZnO) thin films modified upon Cu doping. Changes characteristic doped films, that deposited on a glass substrate by sol–gel dip coating technique, monitored using X-ray diffraction (XRD) UV measurements. Our show structure ZnO can be well described DFT+U/ method we find atom substitutional doping is most...
The structural, optical, and nonlinear optical absorption properties of ZnO polycrystalline thin films are investigated. Energy bandgap values obtained with linear spectrum depending on either sole doping Al or co‐doping, energies shift toward higher lower energies. With Al‐only doping, the film shifts which can be attributed to Moss–Burstein effect, co‐doping (Al–Cu Al–Co) due defect states residing within bandgap. Urbach grain sizes calculated study effect absorption, these calculations...
Current transport mechanisms (CTMs) and temperature sensing qualifications of Al/(ZnS-PVA)/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -Si structures are identified with the help temperature-dependent forward bias current-voltage measurements. To determine current mechanism, electrical parameters structure such as saturation ( notation="LaTeX">${I}_{o}$ ), zero –...
This paper presents the design and implementation of Pirani vacuum gauges for characterization packaging microelectromechanical systems (MEMS). Various are fabricated with two different standard in-house fabrication processes, namely silicon-on-glass (SOG) process dissolved-wafer (DWP). The utilize meander-shaped suspended silicon coils as heaters isolated islands in close proximity heater that function dual-heat sinks to enhance sensitivity dynamic range compared a microbridge single heat...