William G.S. Leigh

ORCID: 0000-0003-0259-8205
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About
Contact & Profiles
Research Areas
  • Diamond and Carbon-based Materials Research
  • Metal and Thin Film Mechanics
  • Semiconductor materials and devices
  • Ion-surface interactions and analysis
  • High-pressure geophysics and materials

Cardiff University
2022-2023

Engineering and Physical Sciences Research Council
2022-2023

The quality of polycrystalline diamond films is heavily dependent on the nucleation and early stages growth, making ability to monitor these highly desirable. Spectroscopic ellipsometry (SE) allows for real-time monitoring thickness, composition, morphology with sub-nanometre precision. In this work, ex-situ SE spectra were used develop an optical model film characterisation, which was then applied in-situ data. coalescence individual crystallites into a single observed through parabolic...

10.1016/j.carbon.2022.10.049 article EN cc-by Carbon 2022-10-24

It is important to account for variance in substrate temperature during microwave plasma-enhanced chemical vapour deposition (MPECVD) nanocrystalline diamond growth, as this has a significant impact on the uniformity of grown film. In work, an in-situ method mapping under MPECVD growth conditions demonstrated, employing mirror galvanometer scan field view dual-wavelength pyrometer across substrate. Temperature maps generated were compared plasma electron densities simulated using finite...

10.1016/j.carbon.2022.09.036 article EN cc-by Carbon 2022-09-16

The high thermal conductivity of polycrystalline diamond makes it ideally suited for management solutions gallium nitride (GaN) devices, with a layer grown on an aluminum (AlN) interlayer atop the GaN stack. However, this application is limited by barrier at interface between and substrate, which has been associated transition region formed in initial phases growth. In work, situ spectroscopic ellipsometry (SE) employed to monitor early-stage microwave plasma-enhanced chemical vapor...

10.1021/acsomega.3c03609 article EN cc-by ACS Omega 2023-08-11

A microwave plasma model is presented to understand the thickness variation of chemical vapour deposited (MPCVD) diamond across 2" Si wafers various substrate thicknesses. The compared with experimentally grown CVD tens microns in on wafers, characterised using surface profilometry and Raman spectroscopy. This work demonstrates that thicker substrates result better uniformity over a deposition area. likely due sample being pushed further into activation region, resulting more uniform...

10.23919/apmc55665.2022.9999754 article EN 2015 Asia-Pacific Microwave Conference (APMC) 2022-11-29
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