А.А. Бурцев

ORCID: 0000-0003-0280-7943
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About
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Research Areas
  • Phase-change materials and chalcogenides
  • Chalcogenide Semiconductor Thin Films
  • Thermography and Photoacoustic Techniques
  • Optical and Acousto-Optic Technologies
  • Photonic and Optical Devices
  • Neural Networks and Reservoir Computing
  • Neural Networks Stability and Synchronization
  • Advanced Memory and Neural Computing
  • Liquid Crystal Research Advancements
  • Laser Material Processing Techniques
  • Nonlinear Optical Materials Studies
  • Genomic variations and chromosomal abnormalities
  • Glass properties and applications
  • Photoreceptor and optogenetics research
  • Chemical Thermodynamics and Molecular Structure
  • Breast Lesions and Carcinomas
  • Surface Roughness and Optical Measurements
  • Nonlinear Dynamics and Pattern Formation
  • dental development and anomalies
  • Laser Design and Applications
  • Thin-Film Transistor Technologies

Kurchatov Institute
2024

Institute on Laser and Information Technologies
2020-2023

Russian Academy of Sciences
2023

Vladimir State University
2018

The paper presents the results of a computational thermo-kinetic model laser heating GeTe thin films and their subsequent thermoconductive radiative cooling. A comparison this experimental observing reversible phase transitions in under impact nanosecond pulsed radiation with «top hat» beam intensity distribution was performed. It shown that subsurface crystallization amorphous film obtained on SiO2 substrates is started at threshold energy density E = 7.5 mJ/cm2. Then process propagates up...

10.1016/j.rinp.2020.103466 article EN cc-by-nc-nd Results in Physics 2020-10-05

This paper presents the results of an experimental study, implementation, and numerical simulation transmissivity a polymer waveguide covered by GST225 thin film with various phase states. The considers optical synapse prototype based on interface between optically controlled film. We demonstrate fundamental possibility controlling signal in telecommunication C-range as it passes through synaptic via action external laser active Experimentally, 40% single- multi-level modulations intensity...

10.1063/5.0063349 article EN Applied Physics Letters 2021-08-23

This paper presents a thermokinetic computational model of phase transitions in GST225 (germanium–antimony–tellurium) thin films [as well as other change materials (PCMs)] induced and initiated by the impact nano- femtosecond laser pulses wide energy fluence range according to results experimental studies using Raman spectra thin-film samples TEM cross-sectional image analysis. Applying this transition makes it possible understand mechanism regarding usage PCMs photonics optoelectronic...

10.1063/5.0147844 article EN Applied Physics Letters 2023-05-09

The work is devoted to the study of characteristics state control a thin-film element based on phase-change GeTe material. properties such an have been controlled by action sequences ultrashort laser pulses. This leads rapid heating thin film and provides phase transition between states with resistance different several orders magnitude. dynamics was studied using high speed oscilloscope according scheme where under voltage divider arm highly stable source. Three types conductivity switching...

10.17586/2226-1494-2023-23-5-911-919 article EN publisher-specific-oa Scientific and technical journal of information technologies mechanics and optics 2023-10-01

<title>Abstract</title> This paper presents and investigates a new architecture of computational cell based on nanoparticles the phase change material Ge2Sb2Te5. Such is chaotic array deposited between closely spaced electrical contacts. The state such structure determined by resistance nanoparticle array, which depends each particle material. Simulation results show that proposed has number switching features cannot be achieved using thin film architecture. allows for smoother more...

10.21203/rs.3.rs-4441116/v1 preprint EN cc-by Research Square (Research Square) 2024-06-03

The paper presents experimental studies and the way of chromaticity formation on stainless steel surface at exposure pulse laser radiation. Methods reflection coefficient calculation oxide iron films are described. We perform dependence wavelength in visible range thickness an oxidic film marked surface. effect is shown that has formed color owing to interference system iron. It how function displaced left its amplitude ЭКСПЕРИМЕНТАЛЬНЫЕ ИССЛЕДОВАНИЯ ПО ФОРМИРОВАНИЮ ЦВЕТНОСТИ …...

10.17586/2226-1494-2018-18-4-581-587 article EN publisher-specific-oa Scientific and technical journal of information technologies mechanics and optics 2018-07-01

Трансмиссионная электронная микроскопия является одним из ключевых маркёров при рассмотрении патогенеза коллагенового кросслинкинга. Цель работы: оценить эффект кросслинкинга фоторефракционной кератоабляции с рибофлавином по данным трансмиссионной электронной микроскопии. Материал и методы. Экспериментальное исследование было выполнено in vivo на 16 глазах кроликов породы Шиншилла, массой тела от 2,5 до 3,5кг, в возрасте 1 1,5 лет. Животные были разделены контрольную опытную группы 8...

10.25557/2310-0435.2019.02.45-50 article RU Nauchno-prakticheskii zhurnal «Patogenez» 2019-06-04

Thin film phase-change materials (PCM) based on germanium telluride (GeTe, GeSbTe, GeSbSeTe) are widely used in photonic devices. In this work, we studied thin films GeTe grown substrates with different temperatures; the obtained spectral and electrophysical characteristics of such demonstrate a strong dependence growth conditions. The research results confirm prospects for use material development controlled optical memory

10.1109/iclo48556.2020.9285918 article EN 2022 International Conference Laser Optics (ICLO) 2020-11-02

В работе представлены результаты исследования динамики управляемого изменения оптических свойств при лазерно-управляемом фазовом переходе в тонких пленках теллурида германия и соединения Ge-Sb-Te (225). Показано, что сильный контраст разных фаз позволяет обеспечить стабильное многоуровневое переключение.

10.22184/1993-8578.2021.14.7s.698.699 article RU Nanoindustry Russia 2021-10-03
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