A5049543908- 3D IC and TSV technologies
- Electronic Packaging and Soldering Technologies
- Particle Detector Development and Performance
- Electron and X-Ray Spectroscopy Techniques
- Adhesion, Friction, and Surface Interactions
- Calibration and Measurement Techniques
- Advanced MEMS and NEMS Technologies
- CCD and CMOS Imaging Sensors
- Advanced Semiconductor Detectors and Materials
- Advanced Welding Techniques Analysis
- Semiconductor materials and devices
- Superconducting and THz Device Technology
- Advanced Sensor Technologies Research
- Electronic and Structural Properties of Oxides
- Extraction and Separation Processes
- Magnetic and transport properties of perovskites and related materials
- Engineering and Test Systems
- Machine Learning in Materials Science
- Quantum, superfluid, helium dynamics
- Social Representations and Identity
- Inorganic Chemistry and Materials
- Advanced Measurement and Metrology Techniques
- Analytical chemistry methods development
- Advanced Thermodynamic Systems and Engines
- Language, Discourse, Communication Strategies
VTT Technical Research Centre of Finland
2008-2018
Tieto (Finland)
2013
University of Oulu
2006
University of Helsinki
1998
Abstract Cooling nanoelectronic structures to millikelvin temperatures presents extreme challenges in maintaining thermal contact between the electrons device and an external cold bath. It is typically found that when nanoscale devices are cooled ∼10 mK significantly overheated. Here we report cooling of Coulomb blockade thermometers below 4 mK. The low operating temperature attributed optimized design incorporates fins with a high electron–phonon coupling on-chip electronic filters,...
This paper presents the fabrication steps of a MEMS package based on silicon interposer wafers with copper filled TSVs and bonded cap for hermetic sealing resonator components. All processes were performed at 200 mm wafer level. For standard process flow including blind hole etching, isolation, filling, front side redistribution, support bonding, thinning, TSV backside reveal was applied. As metallization, appropriate I/O terminals seal ring structures deposited by semi-additive Au Au+Sn...
In this paper, wafer-level AuSn/Pt solid-liquid interdiffusion bonding for hermetic encapsulation of microelectromechanical systems (MEMS) is evaluated. Although AuSn used ICs, the implementation diffusion in MEMS applications requires thorough understanding its compatibility with complete layer stack including adhesion, buffer, and metallization layers. Partitioning stacks possible devices consisting several silicon wafers since device wafer carrying functional structures have different...
Wafer level Solid-Liquid Interdiffusion (SLID) bonding is used to encapsulate MEMS devices. The metals in SLID bonds can improve the reliability by absorbing mechanical and thermo-mechanical stresses. In this paper, of wafer Au-Sn-(Ni) Cu-Sn was systematically characterized evaluated with shear/tensile tests, shear fatigue test, mixed flow gas (MFG) high temperature storage (HTS) test thermal shock (TS) test. failure modes physical mechanisms were analyzed. Overall, results demonstrated...
The article describes a low temperature bump bonding process to flip chip bond CdTe sensors on Timepix readout chips with two separate pixel pitches: 55 μm and 110 μm. Because the sensor properties of start degrade around 150 °C, InSn (48-52) solder joints were used. bumping flow routine are described, leakage currents radiation images compared at different pitches. results show good yield both
The article describes a low temperature bump bonding process to assemble CdTe sensors readout chips. solder material used is In-Sn with theoretical melting point of 118 °C. was tested using Timepix chips 30-μm diameter bumps and 55-μm pitch bonded sensors. first results from these assemblies show very good bumping yield.
In this paper, MEMs solution of the biosensor based on optical feedback interferometry is presented. Optical occurs when part emitted laser light coupled back into cavity. The interacts with original producing an interference signal which detected using a photodetector placed opposite side cavity