CuGaTe(2) with a chalcopyrite structure demonstrates promising thermoelectric properties. The maximum figure of merit ZT is 1.4 at 950 K. and related chalcopyrites are new class high-efficiency bulk material for high-temperature applications.

In the present study, we investigated high-temperature thermoelectric (TE) properties of AgGaTe2 with chalcopyrite structure. We tried to enhance TE by reducing Ag content. The reduction increased carrier concentration, leading enhancement dimensionless figure merit (ZT). maximum ZT value was 0.77 at 850 K obtained in Ag0.95GaTe2, which approximately two times higher than that stoichiometric AgGaTe2.

In recent years, nanostructured thermoelectric materials have attracted much attention. However, despite this increasing attention, available information on the properties of single-crystal Si is quite limited, especially for high doping concentrations at temperatures. study, heavily doped (1018–1020 cm−3) n- and p-type were studied from room temperature to above 1000 K. The figures merit, ZT, calculated measured data electrical conductivity, Seebeck coefficient, thermal conductivity....

Liquid ZrO2 is one of the most important materials involved in severe accident analysis a light-water reactor. Despite its importance, physical properties liquid are scarcely reported. In particular, there no experimental reports on viscosity ZrO2. This mainly due to technical difficulties measurement thermo-physical ZrO2, which has an extremely high melting point. To address this problem, aerodynamic levitation technique was used study. The density calculated from mass and volume, estimated...

Bulk nanostructured Si prepared using an easy, reliable bottom-up method exhibits exceptionally high <italic>zT</italic> of 0.6 at 1050 K.

In order to conduct defueling operations for the decommissioning of reactor at Fukushima Daiichi nuclear power plant, an understanding physical properties ZrSiO4 is extreme importance. appears have formed in molten core–concrete interaction products disaster site through a reaction between Zircaloy cladding materials and concrete. Since has high melting point 2550 K, together with chemical inertness, material been widely studied as refractory material. Various studies on performed; however,...

This study demonstrates a simultaneous realization of ultralow thermal conductivity and high thermoelectric power factor in epitaxial GeTe thin films/Si substrates by combination the interface introduction domain engineering suppression Ge vacancy generation point defect control. We formed Te-poor films having low-angle grain boundaries with misorientation angle close to 0° or twin interfaces 180°. The control defects gave rise lattice ∼0.7 ± 0.2 W m-1 K-1. value was same order magnitude as...

FeNbSb is an excellent p-type half-Heusler thermoelectric material from the viewpoint of not only properties but also thermomechanical properties.

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A pair of n-type Bi2Te3–xSex and p-type (Bi,Sb)2Te3 is known as a promising candidate for assembling high thermoelectric efficiency module operating at near room temperature. While the dimensionless figure merit (zT) commonly larger than 1.0, has lower zT value ∼0.8 Here, we aim to enhance through energy filtering effect that can improve Seebeck coefficient by adding Au. In Bi2Te2.8Se0.2 + 5 % Au composite, significantly improved, electrical resistivity does not change significantly, leading...

We evaluated the potential of polycrystalline (poly-) GeSn as channel material for fabrication thin film transistors (TFTs) at a low thermal budget (&amp;lt;600 °C). Poly-GeSn films with grain size ∼50 nm showed carrier mobility ∼30 cm2 V−1 s−1 after low-temperature annealing 475–500 °C. Not only but also conductivity is important in assessing self-heating effect poly-GeSn TFT. The 5–9 W m−1 K−1, which significantly lower compared 30–60 K−1 bulk Ge; this difference results from phonon...

Ag2Te is well-known as a silver ion conductor. In this compound, phase transition occurs at around 420 K and ions jump to interstitial sites repeatedly the point of starting transition. We consider that active movement would have influence on scatterings both charge carriers heat carrying phonons in Ag2Te. order evaluate effect conduction thermoelectric properties Ag2Te, Seebeck coefficient, electrical resistivity, thermal conductivity Hall coefficient polycrystalline bulk samples were...

In this study, we have developed highly efficient thermoelectric materials based on p-type and n-type composite films of Si nanocrystals Ni silicide nanocrystals. The heavy doping the with boron or phosphorus thermal annealing caused formation high electrical conductivities, low Seebeck coefficients, consequently leading to dimensionless figures merit (ZT). For (B-doped) (p-doped) films, ZT is 0.13 0.06, respectively, which were much higher than that bulk (&amp;lt;0.01) at RT nanostructured Si.

The effectiveness of thermoelectric (TE) materials at converting heat gradients into electricity, and vice versa, is quantified by the dimensionless figure merit, ZT.Current TE materials, such as Bi 2 Te 3 PbTe, have ZT values approximately 1, but contain highly toxic and/or rare elements, which limits their widespread use.However, Si a non-toxic, inexpensive, abundant element.Even though bulk exhibits good electrical properties, its lattice thermal conductivity (¬ lat ) high (>100 Wm ¹1 K...

Yb0.3Co4Sb12 skutterudite, which is known for its ability to directly convert heat into electricity as a thermoelectric material, typically manufactured in bulk via pressure sintering. In order improve productivity, enhancing sinterability reduce the applied crucial. Therefore, one approach improving involves testing application of sintering aid. pressureless experiments performed under vacuum, skutterudite showed minimal progress, even at temperatures approaching decomposition point....

The temperature dependence of the magnetostrictive properties Cu0.6Co0.4Fe2O4 and CoFe2O4 samples was investigated. At 300 K, strain magnitude sample increased with increasing magnetic fields reached a maximum value at approximately 0.8 T. Upon further fields, gradually decreased almost saturated 7 Compared to sample, exhibited more pronounced increase in as decreased. In addition, T clear 100 unlike that obtained sample. showed 911 ppm K by changing direction field, which is significantly...

Filled skutterudite compounds are known as excellent thermoelectric (TE) materials. It is that the voids in structure of compounds, such CoSb3, can be filled or partially with a variety different atoms, and, thus, obtained exhibit quite low thermal conductivity (κ). In present study, we tried to fill Ga into CoSb3. The polycrystalline samples GaxCo4Sb12 (x = 0.05, 0.10, 0.15, 0.20, 0.25, and 0.30) were prepared, TE properties examined from room temperature 750 K. All composed two phases:...

Ternary compounds with a tetragonal chalcopyrite structure, such as CuGaTe2, are promising thermoelectric (TE) materials. It has been demonstrated in various systems, including quaternary chalcopyrite-like structures, that the lattice parameter ratio, c/a, being exactly 2.00 to have pseudo-cubic structure is key increase degeneracy at valence band edge and ultimately achieve high TE performance. Considering fact ZnSnSb2 reported c/a close 2.00, it expected multiple bands leading p-type zT....

The Cu–Ga–Te ternary compounds: Cu3Ga5Te9, Cu2Ga4Te7, CuGa3Te5, CuGa5Te8, and CuGaTe2 have zinc-blende or chalcopyrite structure. compounds except for contain vacancies in the cation site due to valence mismatch between anion, vacancy concentration is different these compounds. Here we investigated effect of amount on thermoelectric (TE) properties At room temperature, presence reduced Hall mobility (μH) lattice thermal conductivity (κlat), showing that scattered both carriers phonons. It...