A5011381929- Advanced Thermoelectric Materials and Devices
- Crystallization and Solubility Studies
- Chalcogenide Semiconductor Thin Films
- X-ray Diffraction in Crystallography
- 2D Materials and Applications
- Thermal properties of materials
- Heusler alloys: electronic and magnetic properties
- Topological Materials and Phenomena
- Crystallography and molecular interactions
- MXene and MAX Phase Materials
- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Graphene research and applications
- Perovskite Materials and Applications
- Photocathodes and Microchannel Plates
- Physics of Superconductivity and Magnetism
- Magnetic and transport properties of perovskites and related materials
- HVDC Systems and Fault Protection
- Inorganic Chemistry and Materials
- Transition Metal Oxide Nanomaterials
- Tree Root and Stability Studies
- Advanced Fiber Laser Technologies
- Magneto-Optical Properties and Applications
- Advanced Memory and Neural Computing
- Agricultural Engineering and Mechanization
Wuhan University of Technology
2018-2024
Shanghai Institute of Microsystem and Information Technology
2024
Nanjing Forestry University
2024
Nantong University
2024
University of Tennessee at Knoxville
2017
Tsinghua University
2015-2016
Institute of Microelectronics
2015-2016
South China Normal University
2015-2016
Soochow University
2016
University of Wollongong
2015
Alloying CdTe in GeTe promotes the band convergence and intensifies phonon scattering due to discordant nature of Cd GeTe. Upon optimizing carrier concentration<italic>via</italic>Sb doping, we obtain a peak<italic>ZT</italic>of 1.8 at 700 K high average<italic>ZT</italic>of 1.3.
Doping in a lattice refers to the introduction of very small quantities foreign atoms and has generally effect on decreasing thermal conductivity, unlike alloying which involves large fractions other elements strongly enhances point defect phonon scattering. Here, we report that, by only 3% In Cu sites diamond-like CuFeS2 chalcopyrite compound (Cu1–xInxFeS2, x = 0.03) disproportionally reducing conductivity from 2.32 1.36 Wm–1K–1 at 630 K. We find that is not fully ionized +3 when sublattice...
The manipulation of individual intrinsic point defects is crucial for boosting the thermoelectric performances n-Bi2Te3-based films, but was not achieved in previous studies. In this work, we realize independent Te vacancies VTe and antisite TeBi BiTe molecular beam epitaxially grown n-Bi2Te3 which directly monitored by a scanning tunneling microscope. By virtue introducing dominant antisites, film can achieve state-of-the-art power factor 5.05 mW m–1 K–2, significantly superior to films...
We report back gate field-effect transistors (FETs) with few-layered MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> nanosheet controlled by lead-zirconate-titanate (PZT) ferroelectric gating. The PZT gating (MoS -PZT FETs) exhibit reproducible hysteresis and nonvolatile memory behaviors high stability, which can be attributed to the polarization screening from interface adsorbates charge dynamic trapping/detrapping into defect...
The Seebeck effect in a material originates from the distribution of asymmetry electron transport under temperature gradient, which has contributions energy-dependent electronic density-of-states and carrier mobility. However, because energy dependence common scattering mechanisms is weak, mobility-driven coefficient long been ignored most thermoelectric materials, considered dominant contribution. In this work, we describe hopping behavior observed CuFeS2, large Hall mobility gradient...
Abstract The structural and magnetic properties of seven CeMn 2 Ge 2-x Si x compounds with = 0.0–2.0 have been investigated in detail. Substitution leads to a monotonic decrease both c along concomitant contraction the unit cell volume significant modifications states - crossover from ferromagnetism at room temperature for Ge-rich antiferromagnetism Si-rich compounds. phase diagram has constructed over full range compositions co-existence observed 1.2 0.8 , 1.0 novel insight provided by high...
The Cu2Se compound possesses extraordinary thermoelectric performance at high temperatures and shows great potential for the application of waste heat recycling. However, a device usually undergoes mechanical vibration, and/or thermal cycling, shock in service. Therefore, properties are equal importance as performance. stability during long-term service have rarely been reported. In this study, we systematically investigated compounds synthesized by three varied methods (melting (M),...
Abstract Interfacial charge transfer has a vital role in tailoring the thermoelectric performance of superlattices (SLs), which, however, is rarely clarified by experiments. Herein, based on epitaxially grown p‐type (MnTe) x (Sb 2 Te 3 ) y superlattice‐like films, synergistically optimized parameters carrier density, mobility, and Seebeck coefficient are achieved introducing interfacial transfer, which effects hole injection, modulation doping, energy filtering involved. Carrier transport...
Polycrystalline Ti1+xS2 (0.111 ≤ x 0.161) with high density and controllable composition were successfully prepared using solid-state reaction combined plasma-activated sintering. showed strong (00l) preferred orientation Lotgering factor of 0.32–0.60 perpendicular to the pressing direction (⊥), whereas was not obvious along (∥). This structural anisotropy resulted in distinct anisotropic thermoelectric transport properties Ti1+xS2. At 300 K, while Seebeck coefficient weak anisotropic, power...
Interactions among various film growth parameters, such as the substrate temperature (Tsub), thickness (d), and composition, play a crucial role in controlling type density of intrinsic point defects. In turn, defects modulate control electronic transport properties Bi2Te3 films. We have grown n-type films with different d by molecular beam epitaxy at Tsub. The formation was analyzed combined use angle-resolved photoelectron spectroscopy (ARPES) measurements. Two important findings were...
Pristine Cr2Se3 is a narrow-band gap semiconductor but with an inferior ZT value of 0.22 obtained at 623 K. In this paper, we improve the thermoelectric performance material by optimizing carrier concentration, suppressing bipolar thermal conductivity, and reducing lattice conductivity simultaneously. First, effect different dopants (Nb, Ni, Mn) on phase composition transport properties M2 xCr2-2 xSe3 (M = Nb, Mn; x 0-0.02) compounds are systematically investigated. The roles those distinct....
Laser operations in the continuous-wave as well pulsed regime of a 4 at.% Tm3+:CaF2 crystal are reported. For operation, maximum average output power 1.15 W was achieved, and corresponding slope efficiency more than 64%. A continuous tuning range about 160?nm from 1877?2036?nm achieved using birefringent filter. Using Argentum nanorods saturable absorber, significant operation passively Q-switched laser observed at 1935.4?nm for first time, to best our knowledge. 385 mW with 41.4 ?J pulse...
Herein, a novel controllable and nondestructive semiconductor doping technique is proposed by introducing defects in the h-BN/GeSe van der Waals heterostructure. A perfect n-/p-type channel layer can be achieved through charge transfer between defective h-BN substrate GeSe layer. The effect of this modulation strategy on carrier mobility layers also investigated. In case heterostructure with introduction boron vacancies, electron 2D x (y) direction 1479.11 (1343.95) cm2 V–1 s–1, hole 1031.88...
Lead telluride (PbTe) is one of the best thermoelectric materials in intermediate temperature range, which shows great potential for waste heat recycling. However, its low strength and high brittleness limit large-scale application because device usually undergoes mechanical vibration, and/or thermal cycling, shock service. In this study, enhanced properties PbTe are realized simultaneously through introducing dispersive transition-metal dichalcogenide MoTe2 (molybdenum telluride). The...
The AlGaN-based deep ultraviolet light-emitting diodes (LED) with double electron blocking layers (d-EBLs) on both sides of the active region are investigated theoretically. They possess many excellent performances compared conventional structure only a single layer, such as higher recombination rate, improved light output power and internal quantum efficiency (IQE). reasons can be concluded follows. On one hand, weakened electrostatic field within wells (QWs) enhances electron–hole spatial...
Abstract Interfacial charge effects, such as band bending, modulation doping, and energy filtering, are critical for improving electronic transport properties of superlattice films. However, effectively manipulating interfacial bending has proven challenging in previous studies. In this study, (1T′‐MoTe 2 ) x (Bi Te 3 y films with symmetry‐mismatch were successfully fabricated via the molecular beam epitaxy. This enables to manipulate thereby optimizing corresponding thermoelectric...
Impurity states and defects scattering introduced by substitutional doping of Mo<sub>1−x</sub>M<sub>x</sub>Se<sub>2</sub> with group VB elements.