Cobalt nitride (Co-N) thin films prepared using a reactive magnetron sputtering process are studied in this work. During the film deposition process, relative nitrogen gas flow (RN2) was varied. As RN2 increases, Co(N), Co4N, Co3N and CoN phases formed. An incremental increase RN2, after emergence of Co4N phase at = 10%, results linear lattice constant (a) Co4N. For 30%, maximizes becomes comparable to its theoretical value. expansion an enhancement magnetic moment, extent that it even...

In this work, we studied the pathways for formation of stoichiometric \tcn~thin films. Polycrystalline and epitaxial \tcn~films were prepared using reactive direct current magnetron (dcMS) sputtering technique. A systematic variation in substrate temperature (\Ts) during dcMS process reveals that lattice parameter (LP) decreases as \Ts~increases. We found nearly can be obtained when \Ts~= 300\,K. However, they emerge from transient state Co target ($\phi$3\,inch). By reducing size to...

Electroreduction and adsorption behavior of pyruvic acid were studied in the presence cetyltrimethylammonium bromide by using cyclic voltammetry, differential pulse adsorptive stripping voltammetry square-wave at HMDE. The reduction peak current increases CTAB. These fully validated sensitive reproducible voltammetric techniques applied for trace determination biological samples. Pyruvic shows a single irreversible −1.35 V ammonia buffer pH 8.2 ± 0.01. Different experimental conditions...

Epitaxial ${\mathrm{Fe}}_{4}\mathrm{N}$ thin films grown on ${\mathrm{LaAlO}}_{3}$ (LAO) substrate using sputtering and molecular beam epitaxy techniques have been studied in this work. Within the process, were with conventional direct current magnetron (dcMS) a high power impulse (HiPIMS) process. Surface morphology depth profile studies these samples reveal that HiPIMS deposited film has lowest roughness, highest packing density, sharpest interface. We found substrate-film interface...

A prototype in situ X-ray absorption near-edge structure (XANES) system was developed to explore its sensitivity for ultra-thin films of iron-nitride (Fe-N), cobalt-nitride (Co-N) and nickel-nitride (Ni-N). They were grown using DC-magnetron sputtering the presence an N 2 plasma atmosphere at experimental station soft XAS beamline BL01 (Indus-2, RRCAT, India). XANES measurements performed K -edge all three cases. It found that spectral shape intensity are greatly affected by increasing...

We present a comparative study of synthesis and characterization aluminum nitride (AlN) thin films deposited using direct current (dc) radio frequency (rf) magnetron sputtering (MS)process. In both cases transparent amorphous AlN phases are formed, albeit at quite different partial N2 gas flows. It appears that the formation phase takes place from transient state Al target deposition rate reduced by about 50-70% as compared to pure metal. However, overall rates were found be higher in dcMS...

Herein, the synthesis, structure, thermal stability, and magnetic properties of Ni 4 N thin films are studied. is difficult to synthesize in correct chemical order stoichiometry due unfavorable thermodynamics. During synthesis Ni–N films, it found that substrate temperature ( T s ) a critical parameter affecting growth phase. The phase transforms into an amalgamation [Ni+Ni 3 N] phases even if rises just above 300 K. These results elucidate correlation between atomic diffusion ....

We discuss the microstructural origin of enhanced radial growth in magnesium (Mg) doped single crystalline wurtzite gallium nitride (w-GaN) nanorods (NRs) grown by MBE, using electron microscopy and first-principles Density Functional Theory calculations. Experimentally, we observe that Mg incorporation increases surface coverage samples as a consequence an increase rate NRs. also coalescence NRs becomes prominent height at which between proximal rods occurs decreases with concentration....

In this work we studied cobalt mononitride (CoN) thin films deposited using dc magnetron sputtering (dcMS) and high power impulse (HiPIMS). A Co target was sputtered pure N2 gas alone as the medium. Obtained long-range structural ordering studies x-ray diffraction (XRD), short-range structure L2,3 N K absorption edges soft spectroscopy (XAS) surface morphology atomic force microscopy (AFM). It found that HiPIMS have better ordering, stoichiometric ratio for composition smoother texture...

In this work, we studied atomic self-diffusion and structural phase transformation in a single iron mononitride (FeN) thin film deposited at an optimized substrate temperature (Ts) of 423 K. At Ts, the FeN exhibits tetrahedral coordination between Fe N atoms (ZnS-type structure with lattice parameter 4.28 Å). The was by combining x-ray diffraction K-edge absorption spectroscopy conversion electron Mössbauer measurements. Self-diffusion measured using secondary ion mass depth profiling...

In this work, high power impulse magnetron sputtering (HiPIMS) was used for the first time to grow Fe4N films. The phase can only be formed when N is precisely at 20 at. %. Therefore, it expected that obtained by optimization of growth parameters such as N2 gas flow, substrate temperature (Ts) etc. We varied process and found under optimized conditions single Ts=675 K. Depth profile sample studied using secondary ion mass spectroscopy substantial inter-diffusion takes place between...