A5019702716- Particle Detector Development and Performance
- CCD and CMOS Imaging Sensors
- Radiation Detection and Scintillator Technologies
- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Advanced Optical Sensing Technologies
- Advancements in Semiconductor Devices and Circuit Design
- ZnO doping and properties
- Radiation Effects in Electronics
- Semiconductor Quantum Structures and Devices
- Advanced Fiber Laser Technologies
- Semiconductor materials and devices
- Advanced Fluorescence Microscopy Techniques
- Ocular and Laser Science Research
- Advanced Semiconductor Detectors and Materials
- Radio Frequency Integrated Circuit Design
- Advancements in PLL and VCO Technologies
- Infrared Target Detection Methodologies
- Integrated Circuits and Semiconductor Failure Analysis
- 3D IC and TSV technologies
- Silicon Carbide Semiconductor Technologies
- Medical Imaging Techniques and Applications
European Organization for Nuclear Research
2018-2024
University of Zagreb
2016-2024
University of Oxford
2019
Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed context of ATLAS upgrade Phase-II at HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $\mu$m) to minimize capacitance, size ($36.4\times 36.4$ $\mu$m), and produced on high resistivity epitaxial p-type silicon. design targets radiation hardness $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$, compatible with outermost layer ITK detector....
The upgrade of the ATLAS tracking detector (ITk) for High-Luminosity Large Hadron Collider at CERN requires development novel radiation hard silicon sensor technologies. Latest developments in CMOS processing offer possibility combining high-resistivity substrates with on-chip high-voltage biasing to achieve a large depleted active volume. We have characterised monolithic pixel sensors (DMAPS), which were produced modified imaging process implemented TowerJazz 180 nm framework ALICE...
In this article, we use a semiclassical low-field mobility modeling framework, which includes all relevant scattering mechanisms, to examine the dependence of electron on 2-D gas (2DEG) density in previously characterized high Al-content AlGaN/gallium nitride (GaN) transistors (HEMTs) with and without an AlN spacer layer. Polar optical phonon (POP) has been identified as dominant mechanism GaN-based HEMTs at room temperature, so analysis POP rates is particular importance. We find that...
The ATLAS collaboration is currently investigating CMOS monolithic pixel sensors for the outermost layer of upgrade its Inner Tracker (ITk). For this application, two large scale prototypes featuring small collection electrode have been produced in a radiation-hard process modification standard 0.18 μm imaging technology: MALTA, with novel asynchronous readout, and TJ MONOPIX, based on well established "column-drain" architecture. MALTA chip first full-scale prototype suitable development...
GaN-based heterostructures have been used in high-power radio frequency applications for a number of years due to the wide bandgap GaN and high values spontaneous piezoelectric polarization, resulting breakdown voltages 2D carrier concentrations. However, accurate modeling low-field electron mobility within such structures remains topic interest. This paper presents comprehensive numerical model calculating gas AlxGa1−xN/GaN transistors. The is based on solving Schrödinger Poisson equations...
Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven radiation tolerance towards requirements ATLAS high-luminosity LHC era. DMAPS integrating fast readout architectures are currently being developed as promising candidates for outer layers future Inner Tracker, will be installed during phase II upgrade around year 2025. In this work, two...
In this article, a low-power, radiation-hard front-end circuit for monolithic pixel sensors, designed to meet the requirements of low noise and pixel-to-pixel variability, key features achieve high detection efficiencies, is presented. The sensor small collection electrode capacitance (<5 fF) allows full CMOS in-pixel circuitry. implemented in 180-nm imaging technology from TowerJazz foundry integrated into MALTA2 chip, which part development that targets specifications outer layer ATLAS...
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The difference in two-dimensional electron gas (2DEG) mobility between single-heterostructure (SH) and double-heterostructure (DH) AlGaN/GaN/(AlGaN) high transistors (HEMTs) has been attributed to a variety of scattering mechanisms physical effects within these devices. In this article, we aim elucidate the origins change SH DH HEMTs, identify responsible for limiting various device structures. To end, use comprehensive numerical low-field modeling framework analyze dependence 2DEG on...
Radiation hard silicon sensors are required for the upgrade of ATLAS tracking detector High-Luminosity Large Hadron Collider (HL-LHC) at CERN. A process modification in a standard 0.18 μm CMOS imaging technology combines small, low-capacitance electrodes (~2 fF sensor) with fully depleted active sensor volume. This results radiation hardness promising to meet requirements ITk outer pixel layers (1.5×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...
A pseudo-LVDS driver has been designed in a 180 nm technology for operation up to 5 Gb/s. It contains parallel main units based on an H-bridge circuit steering current external load. The number of active is adjustable, reduce switching capacitance and static current, hence power consumption, if smaller swing can be tolerated. Pre-emphasis applied with capacitively coupled charge-injection circuit. In the nominal condition 4 mA over 100 $\Omega$ termination resistor, it consumes 30 mW from...
Depleted Monolithic Active Pixel Sensors (DMAPS) are an option for the outermost layer of upgraded ATLAS ITk Detector at CERN LHC. Two large size DMAPS named TJ MALTA and Monopix were produced in TowerJazz 180 nm CMOS imaging process a small collection electrode design. The chip combines low power front end with novel matrix readout design to achieve consumption <80 mW/cm2. Threshold values 250 e- dispersion 30 ENC < 10e- can be achieved before irradiation which is consistent results from...
High electron mobility transistors (HEMTs) consisting of GaN and its alloys, most commonly AlGaN, have been gaining popularity as the next generation high-speed devices for radiofrequency power applications. Although a high concentration 2D electrons in such structures can be obtained even equilibrium, i.e. with zero gate bias, recent years there has tendency developing normally-off, enhancement-mode HEMTs to ease integration associated gate-driver circuitry. Therefore, accurate simulation...
Abstract The MALTA family of depleted monolithic pixel sensors produced in TowerJazz 180 nm CMOS technology target radiation hard applications for the HL-LHC and beyond. Several process modifications front-end improvements have resulted hardness >10 15 1 MeV n eq /cm 2 time resolution below ns, with uniform charge collection efficiency across size 36.4 × µm small electrode. This contribution will present comparison samples on high-resistivity epitaxial silicon Czochralski substrates,...
Single-photon avalanche diodes (SPADs) are gaining popularity in applications where low intensity light needs to be detected. Since they used Geiger mode, the self-sustaining quenched, an important part of detection circuitry is quenching circuit. First, we examine operation a basic passive circuit consisting SPAD and two series resistors measure SPAD's dark count rate. Then implement with active reset (PQAR). Without sufficiently long hold-off time between does not operate properly. Because...
The paper describes the implementation and characterization of single-photon avalanche diodes (SPADs) fabricated in a commercial 180 nm high-voltage (HV) bipolar-CMOS-DMOS (BCD) technology. SPAD structures utilize deep, low-doped p-n junction as multiplication layer, exploiting implant layers available Technology computer-aided design (TCAD) simulations are performed to ensure that breakdown occurs active region device estimate voltage dark count rate (DCR). devices with different sizes...