A5101460156- Phase-change materials and chalcogenides
- Chalcogenide Semiconductor Thin Films
- Advanced Memory and Neural Computing
- Liquid Crystal Research Advancements
- Ferroelectric and Negative Capacitance Devices
- Solid-state spectroscopy and crystallography
- Transition Metal Oxide Nanomaterials
- Semiconductor materials and devices
- Nonlinear Optical Materials Studies
- Electronic and Structural Properties of Oxides
- Neuroscience and Neural Engineering
- Ferroelectric and Piezoelectric Materials
- Perovskite Materials and Applications
- Gas Sensing Nanomaterials and Sensors
- ZnO doping and properties
- Inorganic Chemistry and Materials
- Microwave Dielectric Ceramics Synthesis
- Copper-based nanomaterials and applications
- 2D Materials and Applications
- Glass properties and applications
- Ga2O3 and related materials
- Polymer crystallization and properties
- Electrical and Thermal Properties of Materials
- Embedded Systems and FPGA Design
- Semiconductor materials and interfaces
Shanghai Jiao Tong University
2007-2020
Anhui University
2018
Huanggang Normal University
2007-2014
To effectively solve the crosstalk issue in highdensity crossbar array (CBA), high rectifying characteristics should be introduced resistance random-access memory (ReRAM) device, and in-depth understanding of affecting factors on properties is essential for large-scale application ReRAM. In this paper, a highperformance self-rectifying device with CMOS compatible Pd/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /TaO...
The amorphous-to-crystal transition has been studied by in-situ resistance measurements for Ge2Sb2Te5 (GST) thin films doped with silicon (Si) or nitrogen (N). It was found that the electrical properties and thermal stability of GST can be improved doping small amount Si in film. In comparison doping, N effects have also it revealed both Si- N-doping increase conduction activation energy enhance amorphous GST.
We report the fabrication of a bidirectional selector based on threshold switching (TS) material AlxTe1−x. By modulating composition and thickness AlxTe1−x film layer, an optimized with advantages being electroforming-free, sufficient operating current (1 mA), satisfactory selectivity (ca. 5.9 × 103), appropriately small voltage ±0.7 V), excellent uniformity was fabricated. The trap-limited conduction model employed to explain TS characteristics W/AlxTe1−x/W device. application high electric...
In this study, we present a bilayer resistive switching memory device with Pt/Ta2O5/HfO2-x /Hf structure, which shows sub-1 μA ultralow operating current, median voltage, adequate ON/OFF ratio, and simultaneously containing excellent self-rectifying characteristics. The control sample single HfO2-x structure bidirectional properties symmetrical I-V curve in low resistance state. After introducing 28-nm-thick Ta2O5 layer on layer, phenomena appeared, maximum ratio (RR) of ~4 × 103 observed at...
Electrical properties and crystallization behaviour of Si–Sb–Te films were studied compared with those a Ge2Sb2Te5 film. The resistivity ratio can reach 106 during the amorphous–crystalline transition, accompanied small thickness change (less than 3%). melting temperature is lower that Furthermore, switching characteristics device using Si10.7Sb39.5Te49.8 film also studied. be successfully switched 4 V, 100 ns pulse for SET operation 5 40 RESET operation. A current low power consumption...
Abstract A Phase Change Access Memory (PRAM) cell with stacked phase‐change layers and heater is prepared. Multi‐bit storage in the reset process of PRAM realized by this structure including uniform thickness different thickness. The thermal simulation results show three temperature zones, they will transform from polycrystalline to amorphous state layer layer. There are four levels resistance appearing R – V characteristics, 2‐bit realized. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
A method has been introduced to realize multi-states storage in phase change memory (PCM) by using stacked films with different amorphous resistivity. The resistivity of each layer was selected make the crystallize successively increase current, and so obtain four resistance states. thickness also optimized ensure enough difference between neighboring state. thermal conduction simulation performed, results indicate that Si–Sb–Te suitable composition, can current PCM. cell film structure...
Impacts of annealing temperature and film thickness to the resistivity Ge2Sb2Te5(GST) have been studied. The GST drops when reaches 180 °C, rises above 360 °C thicker crystallized more easily. Electronic device phase change memory also has fabricated with metal sidewall technology using 5 μm lithographic technology. was successfully programmed by 100 ns V pulse for SET 10 RESET. More than times on/off ratio reached.
Te-free SixSb100−x (x = 5, 15, 25, 42) thin films are proposed for electronic phase-change memory application and the oxygen doping effect on Si15Sb85 film is investigated in detail. Improved electrical properties obtained when partial pressure ratio 10%. The crystalline resistivity of enhanced amorphous/crystalline also increased to more than 104. crystallization temperature oxygen-doped 229 °C maximum a 10 year lifetime estimated be 129 with activation energy 3.11 eV, which promises better...
Two basic models for phase-change random-access memory (PRAM) are compared the first time. Model 1 is based on polycrystalline Ge 2 Sb Te 5 , and phase change takes place only in some of film. amorphous . This work indicates that model has an excellent R OFF / ON but inferior structure reset current. superior current, Therefore, 2, it important to control thickness nonprogrammable volume ensure sufficient proper range ratio non-programmable programmable calculated as 0.003–1%. The simulation...
Si-doped Ge2Sb2Te5 films have been prepared by dc magnetron co-sputtering with and Si targets. The addition of in the film results increase both crystallization temperature phase-transition from face-centred-cubic (fcc) phase to hexagonal (hex) phase. resistivity shows a significant doping. When doping 11.8 at.% film, after 460°C annealing increases 1 11 mΩ.cm dynamic resistance 64 99Ω compared undoped film. This is very helpful writing current reduction phase-change random access memory.