Memcomputing is a novel non-Turing paradigm of computation that uses interacting memory cells (memprocessors for short) to store and process information on the same physical platform. It was recently proven mathematically memcomputing machines have computational power nondeterministic Turing machines. Therefore, they can solve NP-complete problems in polynomial time and, using appropriate architecture, with resources only grow polynomially input size. The reason this stems from properties...

This paper discusses the design of a wideband class AB-C Doherty power amplifier suitable for 5G applications. Theoretical analysis output matching network is presented, focusing on impact non-ideally infinite impedance auxiliary in back off, due to device’s parasitic elements. By properly accounting this effect, designed was able follow desired trajectories across 2.8 GHz 3.6 range (fractional bandwidth = 25%), with good trade-off between efficiency and bandwidth. The two 10 W packaged GaN...

A theoretical validation of the offset lines method for design Doherty power amplifiers is presented first time. The analysis carried out considering simplified unilateral active device model classically adopted in amplifier theory. In particular, it proved that, narrow band conditions, properly designed preserve ideal load modulation across full sweep range. demonstration independent from strategy adopted, e.g., terms output back-off, even or uneven architecture. simple analytical formula...

Modern mobile communication signals require power amplifiers able to maintain very high efficiency in a wide range of output levels, which is major issue for classical amplifier architectures. Following the load-modulation approach, enhancement achieved by dynamically changing load impedance as function input power. In this paper, review widely-adopted Doherty and other techniques presented. The main theoretical aspects behind each method are introduced, most relevant practical...

This paper presents the theoretical analysis of phase distortion (AM/PM) mechanisms in Gallium Nitride (GaN) Doherty power amplifiers (DPAs) and a novel approach to optimize tradeoff between linearity efficiency. In particular, it is demonstrated how possible mitigate AM/PM by designing suitable mismatch at input active devices, based on identification constant gain contour circles. The proposed theory experimentally confirmed source- load-pull measurements further validated through design...

This letter presents the design and characterization of a Doherty power amplifier for K-band applications based on GaAs 150-nm pseudomorphic HEMT (pHEMT) technology Qorvo. For output combiner, wideband approach, embedding capacitance active devices in is applied. A state-of-the-art bandwidth 4 GHz achieved: 21-25-GHz range, above 29.5 dBm, with an associated added efficiency (PAE) higher than 30%. At 6-dB back-off, PAE 19% while corresponding gain 10 dB.

Thermal stress in microwave power devices is a major issue for space applications, with detrimental impact on the operating life-time of MMICs board satellites. To limit this, derating rules are applied to maximum junction temperature, which however potential device performance when GaN/Si technology employed. In this framework, classical amplifier design paradigm must be reconsidered, moving thermal-aware approach. aim, it crucial have access highly reliable thermal models adopted devices....

The detection of Unmanned Aerial Vehicles (UAVs) micro/nano dimensions, is becoming a hot topic, due to their large diffusion, and represents challenging task from both the system architecture components point view. Frequency Modulated Continuous Wave (FMCW) radar in Multi-Input Multi-Output configuration has been identified as most suitable solution for this purpose, its inherent short-range capability compact implementation. This paper describes operation technology challenges development...

An accurate, yet computationally efficient, computer-aided design (CAD) framework is proposed for the concurrent variability analysis of active and a passive part radio frequency (RF)/microwave nonlinear stage. Both parts are modeled, fully retaining link to their physical technological parameters. This allows global assessment stage sensitivity due process variations. The device first modeled through technology CAD (TCAD); then, model implemented within an RF/microwave electronic automation...

This work discusses the design of a 2-stacked cell at 36 GHz, analyzing large discrepancies found between circuit-level and electro-magnetic (EM) simulations due to crosstalk (gate power leakage). At millimeter-wave frequencies, EM optimization inter-stage matching is crucial, however, its layout compactness poses several issues on selection set-up, thus reliability was put in doubt. To dispel this doubt fabricated tested, demonstrating effectiveness predictions actual presence gate leakage....

This paper presents a broadband 3–3.7 GHz class-J Doherty power amplifier exploiting second harmonic tuning in the output network. Furthermore, impedance inverter is eliminated and its effect embedded main device’s matching network, thus trading off among bandwidth, efficiency, gain. The proposed adopts two 10 W packaged GaN transistors, it achieves measurement 60–74%, 46–50% drain efficiency at saturation 6 dB back-off, respectively, with saturated of 43–44.2 dBm small-signal gain 10–13 dB....

Process-induced variability is a growing concern in the design of analog circuits, and particular for monolithic microwave integrated circuits (MMICs) targeting 5G 6G communication systems. The RF (MW) technologies developed deployment these systems exploit devices whose dimension now well below 100 nm, featuring an increasing due to fabrication process tolerances inherent statistical behavior matter at nanoscale. In this scenario, analysis must be incorporated into circuit optimization,...

Abstract The article presents the design, realization, and experimental validation of a GaN‐based hybrid Doherty power amplifier for WiMAX base‐stations at 3.5 GHz. exploits, first time as far authors' knowledge goes, second harmonic tuning scheme designed to further improve efficiency in region. is based on packaged GaN HEMT from Cree, shows saturated output exceeding 43.2 dBm (21.5 W), high‐efficiency region excess 6 dB back‐off, with peak maximum drain saturation 55 61%, respectively....

The aim of this work is to assess the performance improvement offered by several driving strategies a dual-input digital Doherty power amplifier with respect equivalent single-input topology. To offer fair comparison, an analog and version, which equal in all parts except for absence input divider, are designed at 3.5 GHz. flexibility control allows implement power-dependent signal splitting phase alignment between main auxiliary branches, thus allowing overcome shortcomings traditional...

This paper presents the design and experimental characterization of a 3-stage stacked MMIC power amplifier in GaAs pHEMT technology. The targets an output 2W from 20 to 23 GHz through direct series combination, is fabricated super-compact monolithic layout. design, basic-cell layout optimization matching, described. Despite presence early compression spots, CW measurements exhibit gain higher than 9.5 dB with larger 31.8 dBm, saturated efficiency excess 27%, 15% bandwidth around 21.5 GHz. To...

Microwave resonators are widely adopted as high sensitivity sensors in both applied and fundamental metrology, to measure a number of different physical quantities, such temperature, humidity, pressure, length material properties. High sensitivity, thus potential measurement precision accuracy, can be achieved by resorting high-quality-factor (Q) resonators. Nonetheless, order accurately high-Q resonance obtain low uncertainty, required metrology applications, the entire set-up must...

In this paper, a stacked MMIC power amplifier in GaAs pHEMT technology is designed for Ku-band operation. The exploits series combination among three transistor stages, thus benefiting from the reduced output impedance transformation ratio compared to an equivalent parallel structure. An extremely compact layout obtained, which influences choice of custom-designed transistors interconnections and interstage matching networks. simulated performance PA, whose experimental characterization...