A systematic approach to designing high frequency and power oscillators using activity condition is introduced. This method finds the best topology achieve frequencies close f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> of transistors. It also determines maximum oscillation for a fixed circuit topology, considering quality factor passive components. Using this technique, in 0.13 μm CMOS process, we design implement 121 GHz 104...

We introduce a novel frequency tuning method for high-power terahertz sources in CMOS. In this technique, multiple core oscillators are coupled to generate, combine, and deliver their harmonic power the output node without using varactors. By exploiting theory of nonlinear dynamics, we control coupling between cores set phase shift frequency. Using method, two VCOs fabricated 65 nm LP bulk CMOS process. The first one has measured 0.76 mW at 290 GHz with 4.5% range second VCO is 0.46 320 2.6%...

In this paper, a general embedding is proposed to boost the power gain of any device maximum achievable (G <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> ), which defined as theoretical device. Using gain-plane based analysis, two linear-lossless-reciprocal embeddings are used perform movement from coordinate transistor that corresponds G . The applied 10 μm common-source NMOS transistor, and simulation results presented compared....

Sub-mm-Wave and terahertz frequencies have many applications such as medical imaging, spectroscopy communication systems. CMOS signal generation at this frequency range is a major challenge due to the limited cut-off of transistors their low breakdown voltage. A recent work has demonstrated high power fixed in sub-mm-Wave using harmonic oscillator [1]. However, for most tunable source necessary. In previous works, multipliers are used an alternative above 150GHz [2]. work, first time we...

A 300 GHz frequency synthesizer incorporating a triple-push VCO with Colpitts-based active varactor (CAV) and divider three-phase injection is introduced. The CAV provides tunability, enhances harmonic power, buffers/injects the fundamental signal from/to divider. locking range of vastly improved due to fact that introduces larger allowable phase change power into loop. Implemented in 90 nm SiGe BiCMOS, achieves phase-noise -77.8 dBc/Hz (-82.5 dBc/Hz) at 100 kHz (1 MHz) offset crystal...

Based on time-variant behavior of metal-oxide-semiconductor field-effect transistors in large-signal operations, harmonic translations and their mutual effects are analyzed. Large amplitudes at terminal voltages these push them into different regions operation. In this paper, derived as a result such changes operation region transistors. Operation triode for portion oscillation cycle results iterative between fundamental frequency second harmonic. They boost each other constructively...

In this article, we present a 438-479-GHz fully integrated 25-element radiator array source based on scalable structure of coupled standing wave oscillator cells without extra loss and parasitics from coupling networks. The bandwidth is extended using varactor-less frequency tuning method, EIRP improved by increasing the size proposed method maximizing radiation directivity silicon lens in an optimized setup. An analysis chip-lens setup presented as well employed approach for enhancing...

A wideband frequency multiplier that effectively generates and combines the even harmonics from multiple transistors is proposed. It takes advantage of standing-wave formation loss cancellation in a distributed structure to generate high amplitude signals resulting harmonic power. Wide bandwidth operation odd around center are inherent properties this multiplier. Using methodology, we implemented doubler operates 220 GHz 275 standard 65 nm CMOS process. Output power 6.6 dBm (0.22 mW)...

A highly efficient push-push voltage-controlled oscillator (VCO) with a new inductive frequency tuning topology for (sub) terahertz frequencies is presented. The technique based on variable inductance seen at the emitter node of base-degenerated transistor. inductor exhibits high quality factor and range due to tunable transistor transconductance via bias current. Fabricated in 0.13- μm SiGe BiCMOS process, VCO achieves 3.5% an output power -7.2 dBm 201.5 GHz. dc consumption 30 mW, resulting...

In this paper, a 0.34-THz 2 × phased array integrated circuit is presented, which demonstrates new approach for implementing arrays in the millimeter-wave (mm-wave)/terahertz (THz) spectrum. The structure consists of four unit standing wave oscillators. each cell, fundamental frequency (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> ) and odd harmonics are systematically cancelled, while desired fourth (4 f combined radiated by...

A new technique to design an inductorless transimpedance amplifier (TIA) is introduced. This uses <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">N</i> similar TIAs in parallel configuration boost the overall bandwidth while keeping gain constant. Using this method, we and implement a 10-Gb/s TIA with active area of only 0.06 mm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> differential 62 dBΩ digital 0.13-μm CMOS process. There good...

A voltage controlled oscillator (VCO) incorporating a system of coupled oscillators with two active mode switching (AMS) blocks is presented. The AMS excite the main VCOs to operate in distinct frequency bands. An overlap between bands has extended tuning range VCO. By turning off, low-loss and low-capacitance behaviors these result wide high harmonic output power at millimeter-wave frequencies. On other hand, by on, their loss-canceling capacitance-tuning yield higher wider lower center...

An 8.8-mW, low-noise, 40.5-GHz frequency synthesizer is proposed. The system consists of a subsampling phase-locked loop (SSPLL) with 100-MHz crystal reference, 900-MHz high-frequency-reference (HFR) PLL, and novel lock detector (SSLD). SSLD keeps monitoring the locking status SSPLL by sampling output HFR reference automatically controls for acquisition if it loses or locks to wrong harmonic. This done without using power-consuming divider-based frequency-locked in conventional SSPLL. Due...

The THz/sub-mm-Wave band is known to provide unique applications in spectroscopy, imaging and high-data-rate wireless communication. An accurate THz source essential coherent communications, radar systems, frequency metrology. Recently, sources based on coupled VCOs with harmonic generation have been proposed [1]. However, open-loop signal exhibit severe fluctuation, are vulnerable temperature/process/supply-induced drift. need for precise oscillation wide tuning range low close-in phase...

Based on piecewise linear modeling of field-effect transistors, harmonic translations are deployed to analyze the fundamental limits for a maximum second-harmonic power generation any given transistor. Optimum waveforms at gate-source and drain-source terminals, which yield high by transistor, derived. Two oscillators implemented in TSMC 65-nm CMOS process. Transistors these have optimum voltage their terminals. Thus, they deliver state-of-the-art output while operating relatively higher...

A systematic method to design high gain amplifiers at frequencies close the f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> of transistors is introduced. This approach finds optimum termination conditions reach maximum achievable device. Using this technique in a standard 130 nm CMOS process, we and implement 107 GHz amplifier with 12.5 dB, PAE 4.4%, saturated output power >;2.3 dBm, consuming 31 mW from 0.95 V supply.

Terahertz and millimeter-wave systems are known to have unique significant applications in health, security industry. Recently, CMOS technology is used implement these for such as imaging, high-speed communication radar [1]. Signal amplification the target THz high mm-Wave entails daunting design challenges, operation frequency getting closer Maximum Oscillation Frequency (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> ) of...

A new two-element phase-locked loop (PLL)-coupled array for the implementation of millimeter-wave (mm-wave) and subterahertz (sub-THz) phased arrays is presented. This architecture avoids using lossy phase shifter to create required shift between adjacent elements in a phased-array system. The generated by utilizing dual nested PLL. two PLL loops work together stabilize frequency shift. Moreover, it can be scaled simply adding more unit cells architecture. 112-121-GHz designed fabricated...

The next generation of fusion reactors, exemplified by projects such as the Demonstration Power Plant following International Thermonuclear Experimental Reactor, faces monumental challenge proving viability generating electricity through thermonuclear fusion. This pursuit introduces heightened complexities in diagnostic methodologies, particularly microwave-based diagnostics. increased neutron fluence necessitates significant reductions vessel penetrations and elimination internal...

In this paper, we present a new architecture for implementation of millimeter-wave (mm-wave) and terahertz (THz) radiator arrays based on standing-wave properties. This structure is continuous distributed coherent array that avoids lossy parasitic coupling networks. Moreover, it can be scaled simply by extending the size replicating unit cell. The absence parasitics in addition to unique characteristics standing waves allows us extend tuning range without using varactors. 0.34-THz...

The effect of gain and embedding amplifying cells (amp-cell) on the output power amplifiers (PAs) at high mm-wave frequencies is studied. This frequency range where matching loss becomes comparable with amp-cell in most silicon technologies. By deriving equations embedded amp-cell, contours are plotted plane an optimum designed to maximize for a desired gain. To showcase theory, high-frequency, high-power called matched cascode, introduced subsequently boost both power. increase even...

This paper provides an overview of broadband terahertz antenna elements and arrays for integrated communication systems. The fundamental challenges on-chip off-chip design, the trade-offs between performance metrics, impact interface chip antennas are studied in detail. limitations benefits various technologies discussed. deployment printed circuit boards (PCB) flexible circuits (FPC) implementation efficient is compared against counterparts. As a proof concept, 91–134 GHz presented.

This paper presents a 200 GHz power amplifier in 65 nm bulk CMOS technology aiming for maximizing the saturated (Psat).A matched-cascode amplification cell (amp-cell) is designed to increase supply voltage and P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sat</sub> , while maintaining gain. Embedding used around amp-cell boost gain total Psat by overcoming matching loss. A low input impedance, balanced slot combiner proposed even further....