Purpose: Glioma is a malignant tumor that originates in the brain and spine difficult to be completely removed.Though glioma patients receive active treatment, survival rate still poor.Therefore, it urgent discover new medicine treat order improve rate.In this study, we explored anticancer effect potential mechanism of luteolin on vitro.Materials methods: Cell viability was determined by Counting Kit-8 (CCK-8) assay.Fluorescent microscopy flow cytometry analysis were used determine cellular...

In this paper, the effect of carrier quantization on device characteristics and stress-induced degradation for multifin high-κ/metal tri-gate n-type p-type fin field-effect transistors (FinFETs) were investigated through electrical characterization simulation. Carrier conduction in steep Si fins FinFETs is different devices with numbers affects performance reliability. For FinFETs, fewer inhibited coupling between to exhibit superior but underwent more severe hot carrier-induced degradation....

In this letter, performance and reliability of high-k/metal gate MOSFETs can be effectively improved using post metallization annealing. Both oxygen nitrogen were shown to diffuse into a high-k/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> interfacial layer suppress the formation vacancy, thus reducing leakage current without increasing effective oxide thickness. particular, with appropriate annealing, gate-induced drain leakage,...

In this paper, the impact of width quantization on device characteristic and stressing induced degradation for high-k/metal tri-gate n/p-type FinFET was investigated well including electrical clarification simulation. Carrier conduction in trapezoidal shape Si-fin body FinFETs is different devices with Fin bottom widths (W <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Fin_bottom</sub> ), which will performance reliability. For n-type FinFETs,...

Niacin commonly causes cutaneous flushing, which is partially alleviated by laropiprant, a selective antagonist of prostaglandin D2 at the DP1 receptor. Here we report an unusually high incidence exanthematous eruption associated with use extended-release (ER) niacin/laropiprant combination treatment in Hong Kong Chinese patients.Among 201 patients treated ER 1000/20 mg over 7 days to assess flushing symptoms and 166 who continued for 12 weeks (doubling dose after 4 weeks), 28 (14%)...

Educational management and social psychology researchers have frequently suggested that job burnout even turnover intention of college teachers can be induced by stress, which is an inherent part fast-changing environments advanced educational technology. However, studies about the contingency effect remain limited. We articulate role stress technostress integrating organizational behaviour literature. Particularly, this study tries to investigate moderating teacher agility leader-member...

Degradation in fin field-effect transistor devices was investigated detail under various hot-carrier stress conditions. The threshold voltage (VTH) shift, substrate current (IB), and subthreshold swing were extracted to determine the degradation of a device. power-law time exponent VTH shift largest at VG = 0.3 VD, indicating that dominated by interface state generation. Although strongest impact ionization occurred mainly caused electron trapping resulting from large gate leakage current.

Dynamic localization, which originates from the phenomena of particle evolution suppression under an externally applied AC electric field, has been simulated by suppressed light in periodically curved photonic arrays. However, experimental studies on their quantitative dynamic transport properties and application for quantum information processing are rare. Here we fabricate one-dimensional hexagonal two-dimensional arrays both with sinusoidal curvatures. We successfully observe...

The triple dielectric SONOS (polysilicon-blocking oxide-silicon nitridetunnel oxide-silicon) structure is an attractive candidate for high density E/sup 2/PROM's suitable semiconductor disks and a replacement high-density DRAMS. Low programming voltages (5 V) endurance (greater than 10/sup 7/ cycles) are possible in this multi-dielectric technology as the intermediate Si/sub 3/N/sub 4/ layer scaled to thicknesses of 50 A. thin gate insulator low voltage enable scaling basic memory cell...

In this work, the effect of fin width on device performance and reliability for high-k/metal tri-gate n/p-type FinFETs was investigated including electrical characteristic clarification simulation. Carrier conduction in trapezoidal shape Si-fin body is different devices with bottom widths (W <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Fin</sub> _ xmlns:xlink="http://www.w3.org/1999/xlink">bottom</sub> ), which will affect properties. For...

In this work, the impact of width quantization on device characteristic and voltage stressing induced degradation for high-k/metal tri-gate n-type FinFET was investigated well including electrical measurement simulation. Carrier conduction in Si-fin body FinFETs different with Fin (W <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Fin</sub> ) it will degradation. The experimental results show that threshold voltage/subthreshold-swing driving...

Rapid thermal oxide followed by anodization in direct current superimposed with scanning frequency alternating was demonstrated for the first time to have an improved quality ultrathin gate oxides. Compared grown without scanning-frequency (SF ANO) treatment, leakage density (J/sub g/) of SF ANO sample is significantly reduced increasing thickness oxide. In addition, it could be observed that interface trap (D/sub it/) tighter distribution. It suggested bulk traps and thermally can repaired...

The paper presents an expert system for enhancing both the voltage security and stability in power systems. is implemented to improve profile when contingencies are less severe adopt appropriate control actions prevent from collapsing encountered. sensitivity a change of load variation on-load-tap-changer (OLTC) tap used verify requirement locking OLTC taps operators. A new model, incorporated with variables real terminal voltage, reactive-power limit generator presented voltage-stability...

In this paper, the impact of fin number on device performance and hot carrier induced degradation was investigated for n-channel tri-gate multi-fin FinFET with different numbers. The threshold voltage (VTH) shift, transconductance, subthreshold swing were extracted to determine device. It found that fewer fins shows better performance, but suffer from more serious degradation. is suggested existed coupling effect between reduces equivalent electric field in multi-fins devices, thus...

In this study, we developed a facilitated ferroelectric high-k/metal-gate n-type FinFET based on Hf0.5Zr0.5O2. We investigated the impact of hysteresis effect device characteristics various fin-widths and degradation induced by stress (Fe-FinFET). clarified electrical conducted related reliability inspections. For Fe-FinFET, behavior Hf0.5Zr0.5O2-based gate stack in Si-fin body is apparent, especially at narrower fin-widths, which affects performance under voltage stress. The film worsened...

Innovation of growth-then-anodization technique is introduced in this work to prepare high-quality ultrathin gate oxides. In repeated direct-current anodization (RDC-ANO) process, the first oxides were prepared by DC5V-ANO with thin and thick thickness followed rapid thermal anneal. The anodizations carried out various dc voltages also same It was found that when voltage ANO higher than ANO, RDC-ANO will superior one time grown DC-ANO ones provided oxide enough. electrical improvements...

The effects of strain-temperature stress on the interfacial characteristics ultrathin SiO/sub 2/ films Si substrates were investigated in this brief. Both tensile and compressive strains respectively applied at evaporated temperature. Quality improvement could be observed one but degradation another.

This study investigates the effects of fluorine plasma treatment (FPT) on reliability p-type ferroelectric fin-shaped field-effect transistors (FeFinFETs) based Hf0.5Zr0.5O2 (HZO) and subjected to negative bias temperature instability (NBTI). Compared with non-FPT devices, FeFinFETs treated FPT exhibited higher drive currents mobility for fresh indicating an improvement in interface quality. After NBTI stress, devices lesser threshold voltage shift subthreshold swing degradation than which...

In this work, coupling effect induced variation of hot carrier degradation was studied for the first time with different fin-number n-channel FinFET devices. Threshold voltage (VTH) shift, transconductance (Gm) and subthreshold swing (SS) were extracted to evaluate device under stress. The intrinsic then by decoupling PBTI component from using power law exponent (n) VTH shift. All devices show more severe increasing stress drain (VD), fin number will improve reliability device. On other...

We demonstrated a high-k/metal gate-last SiGe channel ultra thin body and BOX (UTBB) CMOSFET process with optimized strain technology for high performance concerns. The impact of SOI thickness from Ge, CESL, high-k material/metal-gate are inspected. An appropriate post treatment is proposed to improve quality stack Hf-based dielectric. achieved manufacturability 28nm UTBB high-k/TiN-based metal-gate last good V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...