A5045004603- Semiconductor materials and devices
- Electron and X-Ray Spectroscopy Techniques
- Metal and Thin Film Mechanics
- GaN-based semiconductor devices and materials
- Semiconductor materials and interfaces
- Electronic and Structural Properties of Oxides
- Acoustic Wave Resonator Technologies
- Catalytic Processes in Materials Science
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Piezoelectric Materials
- Advanced Memory and Neural Computing
- Ga2O3 and related materials
- X-ray Spectroscopy and Fluorescence Analysis
- Ferroelectric and Negative Capacitance Devices
Tokyo City University
2022-2025
Abstract The presence of hydrogen-incorporated defects in silicon nitride (SiN) films has been reported to degrade device properties, such as NAND flash memory. Therefore, controlling the amount hydrogen SiN achieve high reliability is important. This study investigated desorption using plasma treatment reduce films. Secondary ion mass spectrometry measurements showed that concentration does not change significantly pre- and post-treatment. However, trap levels determined Poole–Frenkel...
Interface dipole modulation (IDM) has predominantly used TiO2 as the IDM layer, and changes in valence state of critically affect device operation. This study demonstrates use SnOx instead TiOx for elucidates underlying mechanism detail. Metal–oxide–semiconductor capacitors with an Al2O3/atomic-layer-thick SnOx/SiO2 stacked structure were fabricated analyzed. Capacitance–voltage measurements revealed that polarity interface layer changed depending on gate bias. Hard x-ray photoelectron...
Abstract GeO2 prepared via thermal oxidation at ambient pressure is known to be of poor-quality owing numerous defects and high interface states. Several methods for fabricating high-quality films been reported, such as applying pressure, but all them present challenges. Therefore, a simpler fabrication method required. In this study, we attempted reduce states in GeO2/Ge atmospheric-pressure using ultraviolet–ozone (UVO) treatment. Measurement results indicated that UVO treatment can the...
Thermally oxidized SiO 2 /Si and GeO /Ge are difficult to form very thin oxide films by atomic layer deposition (ALD) due the chemical inertness of film surface. In this study, effect surface modification insulating UV-Ozone (UVO) method on ALD was investigated with aim controlling thickness producing a uniform film. The results show that UVO treatment can deposit layer-thick or without delay. This may be formation dangling bonds surface, which improves reactivity between precursor during...
Abstract Hard X-ray photoelectron spectroscopy was used to examine the interface dipole modulation of SiO 2 /1-monolayer titanium oxide/HfO stack embedded in a metal–insulator–metal structure. Reversible shifts Si 1 s , Hf 3 d and Ti peaks were induced by electrical stress, they indicate switching potential profile inside /titanium stack. Moreover, proportion change 3+ component correlates with switching, that correlation suggests structural around atoms leads modulation.
Recently, Interface Dipole Modulation (IDM) has been observed in amorphous HfO 2 /1-Monolayer (ML) TiO x /SiO stack structures [1]. To fabricate IDM devices, the thickness of modulation layer, which is at atomic layer level, must be precisely controlled to produce a uniform film with high-quality. Therefore, Atomic Layer Deposition (ALD) one promising methods. However, it difficult form very thin oxide films on thermally oxidized SiO /Si or GeO /Ge by ALD because surface chemically inert. In...
Abstract The effect of plasma treatment on AlScN films is investigated using angle-resolved hard X-ray photoelectron spectroscopy (HAXPES). As a result, it was observed that the ratio oxide component to nitride in film increased with oxygen treatment. It also less susceptible oxidation after 1 min pre-nitridation. Furthermore, inhibition more pronounced for Sc atoms than Al atoms. These suggest nitridation reduced number nitrogen vacancies around facts mean increase on/off current MIM...
Abstract This paper describes the band alignment of metal/AlSc(O)N measured using hard X-ray photoelectron spectroscopy. The offset was determined by difference in binding energy from core level to upper edge VB, and bandgap loss spectrum photoelectrons. introduction oxygen into AlScN make AlScON decreases both conduction VB offsets. change barrier height metal/AlScN structure is very small relative work function metal. suggests that Fermi-level pinning occurs at interface.