A5069325709- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Copper-based nanomaterials and applications
- Semiconductor materials and interfaces
- Crystal Structures and Properties
- Advanced Thermoelectric Materials and Devices
- Phase-change materials and chalcogenides
- nanoparticles nucleation surface interactions
- Magnetic and transport properties of perovskites and related materials
- Multiferroics and related materials
- Magnetic Properties and Synthesis of Ferrites
- Solid-state spectroscopy and crystallography
- Ferroelectric and Piezoelectric Materials
- Microstructure and Mechanical Properties of Steels
- Metal Extraction and Bioleaching
- Magneto-Optical Properties and Applications
- Solid State Laser Technologies
- Photorefractive and Nonlinear Optics
- Advanced NMR Techniques and Applications
- Metallurgical Processes and Thermodynamics
- Thermal and Kinetic Analysis
- Material Science and Thermodynamics
- Gas Sensing Nanomaterials and Sensors
- ZnO doping and properties
- Glass properties and applications
Borough of Manhattan Community College
2016-2022
City University of New York
2015-2022
Belarussian State Pedagogical University Named After Maxim Tank
2015-2016
National Academy of Sciences of Belarus
1981-2013
Institute of Solid State Physics and Semiconductors
1993-2010
Lithuanian Academy of Sciences
1986
Institute of Solid State Chemistry
1985
Osipyan Institute of Solid State Physics RAS
1985
Institute of Physics
1980
The microhardness of eleven AIBIIICVI2 semiconducting compounds and thatof their CuGaS2xSe2(1−x), CuInS2xSe2(1−x), CuGaxIn1−xS2, CuGaxIn1−xSe2, AgGaxIn1−xS2 solid solutions is experimentally studied in the plane (112). functional dependences on molar mass melting temperature are determined for starting terms which values all estimated. Debye temperatures calculated using Madelung-Einstein Linde-mann relations taking into account temperatures, respectively. It established that increasing...
Abstract The phase diagram of the CuInSe 2 ‐CuInS system is plotted using DTA and solidus liquidus lines by approximation theory regular ideal solutions are calculated. single crystals x S 2(1− ) solid first grown chemical transport.
The high temperature behaviour of AIBIIIX2VI chalcopyrites (A = Cu; B Al, Ga und In; X S, Se, Te) was studied by in-situ synchrotron radiation X-ray diffraction. Structural phase transitions from the α with chalcopyrite structure to β sphalerite were obtained in compounds CuInX2 and CuGaTe2. driving force this order-disorder transition is a Cu–In anti site occupancy starting critcal region, nearly 10 K before temperature. order parameter transition, expressed as Δn e |n (disordered) – n...
Thin films of chalcopyrite AgGaSe(2) have been successfully grown on glass and glass/molybdenum substrates using the technique chemical close-spaced vapor transport. The high crystallinity samples is confirmed by grazing-incidence x-ray diffraction, scanning transmission electron microscopy, optical transmission/reflection spectroscopy. Here, two three expected direct bandgaps are found at 1.77(2) 1.88(6) eV 300 K. lowest bandgap energy 4 K estimated to be 1.82(3) eV. Photoluminescence...
The bulk crystals of the CuAlTe2 semiconductor ternary compound with chalcopyrite structure were prepared, and their optical properties investigated. It was determined that value band gap energy equals 1.69 1.65 eV at 105 293 K, respectively. photoluminescence spectra measured for first time contain broad bands peaks 1.09 (78 K) 1.03 (293 K). full width half maximum (FWHM) both temperatures is 0.28 eV. origin this associated to deep acceptor transition. (© 2006 WILEY-VCH Verlag GmbH & Co....
Direct synthesis of CuGaS(2) from elemental ingredients in a two-zone furnace resulted macroseparation Cu-rich and Ga-rich regions over the crystallization volume. In parts ingot, near-stoichiometric chalcopyrite phase (I42d) copper sulfides were found. part, along with some Cu deficiency, new tetragonal I4m2 composition close to Cu(5)Ga(9)S(16) crystal lattice parameters = 3.7777(2) Å, c 5.2483(4) Å was revealed. It concluded that this Cu-deficient chalcopyrite-like is not an ordered defect...
Abstract The local structure around Mn atoms in Mn‐doped CuAlS 2 and CuGaS chalcopyrites is investigated using the X‐ray absorption fine method. Extended spectroscopy (EXAFS) near‐edge measurements at K‐edge indicate that substitutes on cationic sites. In located both Cu Al sites, with a preference for sites higher concentrations. Discrimination between two impossible :Mn EXAFS due to almost identical photoelectron scattering amplitudes phases Ga atoms. nearest‐neighbour Mn–S distance all...
Abstract The molar heat capacity at constant pressure C P has been measured for CuAlS 2 semiconductor in the temperature range from 80 to 300 K first time. From experimental results volume V and thermodynamic functions such as enthalpy H entropy S were calculated. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Abstract Alloys in the CuAlSe 2 –CuAlTe system were synthesized BN‐crucibles silica tubes under vacuum to obtain corresponding phase equilibria. X‐ray powder diffraction and thermal analytic data of T – x diagram revealed a complete solid solutions series subsolidus region. Within Te 2(1– ) refined lattice parameters c approximately obey Vegard rule also cell volume heat fusion confirm linear correlations with composition mixed crystals. The anion position parameter calculated after S. C....
The starting ternary compounds CuInS 2 and CuSbS alloys of the –CuInS system with molar fractions ( x ) equal to 0.05, 0.15, 0.25, 0.375, 0.50, 0.625, 0.75, 0.85, 0.95 were prepared phase relations in this investigated by X‐ray powder diffraction, optical microscopy, scanning electron differential thermal analysis. It was shown that T–x diagram –CuSbS has a eutectic character temperature 807 K. fraction range from 0.038 0.941 at room are two‐phased, limits solubility 0.059 for .
Abstract Alloys of the (CuBiSe 2 ) 1–x (CuInSe x system with molar part CuInSe (x) equal to 0.05, 0.15, 0.25, 0.375, 0.50, 0.625, 0.75, 0.85, and 0.95 were prepared phase relations in this above 600 K investigated by using X‐ray powder diffraction, microstructure studies, differential thermal analysis. It was established, that T–x diagram –CuBiSe has a peritectic character peritectics temperature 837 K. The limits solubility from both sides do not exceed 0.05 parts corresponding ternary...
Abstract Powder samples of Mn 2 x Cu 1– InS ( = 0.03) and AlS 0.01) were studied by X‐ray diffraction magnetization measurements. With regard to the variation structural parameters with substitution it is evident, that 2+ built into chalcopyrit structure. For both field dependence characterized a dominating linear behaviour positive strongly temperature dependent susceptibility as expected for paramagnets. After subtraction part almost no curves are s‐formed, ferromagnetic‐like loops...
Investigations have been made for the first time of thermal expansion (CuInSe2)1—x-(2ZnSe)x solid solutions. It has demonstrated that coefficient αL grows considerably in temperature range from 77 to 300 K whereas dependence above is rather weak. The solutions with 0 x ≤ 0.3 λ-like anomalies dependences on indicating a phase transition chalcopyrite type structure into sphalerite structure. Such anomaly αL(T) not observed ≥ 0.4. isotherms composition 77, 293 and 623 were constructed. They are...