A5060089973- ZnO doping and properties
- Gas Sensing Nanomaterials and Sensors
- Copper-based nanomaterials and applications
- Advanced Measurement and Metrology Techniques
- Surface Roughness and Optical Measurements
- Polymer Nanocomposites and Properties
- Advanced Sensor and Energy Harvesting Materials
- Silicone and Siloxane Chemistry
- Optical Coatings and Gratings
- Ga2O3 and related materials
- Semiconductor materials and devices
- Nanowire Synthesis and Applications
- Polymer Nanocomposite Synthesis and Irradiation
- Advanced Photocatalysis Techniques
- Perovskite Materials and Applications
- Force Microscopy Techniques and Applications
Taiwan Semiconductor Manufacturing Company (China)
2019
National Tsing Hua University
2000-2014
National Chung Hsing University
2014
It has been found that atomic force microscope (AFM) induced local oxidation is an effective way for converting thin (<5 nm) Si3N4 films to SiOx. The threshold voltage the 4.2 nm film as low 5 V and initial growth rate on order of 103 nm/s at 10 V. Micro-Auger analysis selectively oxidized region revealed formation Due large chemical selectivity in various etchants great thermal difference between Si3N4, SiO2, Si, AFM patterning can be a promising method fabricating nanoscale structures.
Zigzag GaN/Ga2O3 heterogeneous nanowires (NWs) were fabricated, and the optical properties NO gas sensing ability of NWs investigated. We find that are most effective at 850 °C a switching process once every 10 min (on/off = per each) with mixture flow NH3 Ar. The red shift bandgap (0.66 eV) is observed from UV-vis spectrum as GaN phase forms. characteristics developed sensor significantly replaced to those other types sensors reported in literature.
The photocatalytic activity of substrate‐supported ZnO nanowires is investigated with a focus on the substrate effect and photodegradation kinetics. employed NWs are grown various substrates by thermal evaporation 50 μ M rhodamine B solution used as target solution. It found that facilitated using conductive such result can be reasonably attributed to improvement charge separation. follow zeroth‐order kinetics at high concentrations first‐order low transition around 10 M. present observation...
The use of large numerical apertures in spectroscopic ellipsometer (SE) or reflectometer (SR) designs allows for smaller measurement targets, but it may introduce side effects like the propagation high diffraction orders into collection pupil. In normal optical critical dimension (CD) condition, zeroth-order diffracted light is only illuminating However, when pitch target enough, high-order can also enter pupil and mix with light. This contaminates leads to inaccuracies fitting target's...