Graphene films were grown on nickel and foils using chemical vapor deposition. To date, similar growth has been reported at around 1000 °C methane or ethylene as source gases. However, by acetylene, we have achieved of graphene between 650 700 °C. The electrical optical properties, including high resolution transmission electron microscopy these films, suggest that this technique is both viable scalable for potential large area optoelectronic applications.

We report here on applying electric fields and dielectric media to achieve controlled alignment of single-crystal nickel silicide nanowires between two electrodes. Depending the concentration nanowire suspension distribution electrical field, various configurations interconnects, such as single, chained, branched were aligned Several mechanisms, including induced charge layer electrode surface, dipole-dipole interactions, an enhanced local field surrounding are proposed explain these novel...

Uniform films of Al2O3 have been photodeposited using an excimer laser operating at 248 nm (KrF) or 193 (ArF) and trimethylaluminum N2O as the reactants. Deposition rates were typically 2000 Å/min physical, chemical, electrical properties are comparable to deposited conventional techniques. Properties aluminum also presented.

A new class of metal ion lasers with significant CW output power in the UV (220-320 nm) and near IR (800-2000 spectral regions is described. In a hollow cathode discharge upper laser levels are excited via charge transfer collisions between ground state buffer gas ions atoms. At present stage development, shown to be comparable rare-gas but lower threshold currents by factor more than twenty. Visible powers lasers. text we device progress date, measurements important plasma parameters, an...

Atomic layer deposition (ALD) was used to grow thin films of MoS2 over 5 × cm areas silicon oxide coated wafers. Smooth, uniform, and continuous were produced a temperature range 350 °C–450 °C. The as-grown analyzed using x-ray photoelectron spectroscopy, Raman photoluminescence, diffraction. Electrical characteristics the evaluated by fabricating back gated field effect transistor. These analyses indicate that ALD technique can produce large area, high quality films.

Atomic layer deposition has been employed to grow nanowires composed of ZnSe/CdSe superlattices. Growth the was initiated using gold nanoparticles and vapor-liquid-solid mechanism. High-resolution transmission electron microscopy shows that these structures are single crystals phase alternating layers ZnSe CdSe is zinc blende. The (111) planes oriented at 60°.

Deposition of thin and conformal copper films has been examined using atomic layer deposition as possible seed layers for subsequent electrodeposition. For this investigation, the were deposited on glass plates well , silicon wafers. Typical resistivities these ranged from thick to films. The adhesion at was excellent. These highly over high aspect ratio trenches. ©2000 Electrochemical Society

Diatoms are single-celled algae that possess silica shells called “frustules” decorated with periodic structures ordered at the micro- and nanoscale. Diatom biosilica containing metabolically inserted germanium is used to fabricate an electroluminescent (EL) thin film device (see figure). The EL spectrum has a series of sharp UV line emissions 340–380 nm weaker bands in blue red range.

Deposition of nickel silicide nanowires has been achieved in the temperature range 320 to 420 °C by decomposition silane on surfaces. The substrates consisted Ni foils and thin films (∼10–100 nm) evaporated 1-μm-thick layers SiO2 predeposited Si wafers. Nanowire growth between two metal pads was with aid an electric field. It found that thinner diameter were produced at low temperatures density dependent reactor pressure. current–voltage relationship these also examined.

We have deposited uniform films of Mo, W, and Cr over large areas (>5 cm2) using UV laser photodissociation their respective hexacarbonyls. The depositions were made at room temperature pyrex quartz plates, as well silicon wafers. examined the resistivity, reflectivity, stress, step coverage these films.

Producing large-scale graphene films with controllable patterns is an essential component of graphene-based nanodevice fabrication. Current methods pattern preparation involve either high cost, low throughput patterning processes or sophisticated instruments, hindering their fabrication and practical applications. We report a simple, effective, reproducible approach for feature sizes shapes. The were generated using versatile photocoupling chemistry. Features from micrometres to centimetres...

Single and multiple layers of graphene films were grown on (111) oriented single crystals nickel polycrystalline using remote plasma assisted chemical vapor deposition. Remote was employed to eliminate the effect electrical field orientation films, as well reduce growth temperature compared conventional The optical properties, including high resolution transmission electron microscopy these suggest that this approach is both versatile scalable for potential large area optoelectronic applications.

Both WS2 and SnS are 2-dimensional, van der Waals semiconductors, but with different crystal structures. Heteroepitaxy of these materials was investigated by growing 3 alternating layers each using atomic layer deposition on 5 cm × substrates. Initially, films were grown characterized separately. Back-gated transistors displayed n-type behavior an effective mobility 12 cm(2) V(-1) s(-1), whereas showed a p-type conductivity hole 818 s(-1). All measurements performed at room temperature. As...

Thin (∼10 nm) films comprising of Ta2O5–HfO2, Ta2O5–ZrO2, and ZrO2–HfO2 nanolaminates were deposited characterized for possible gate dielectric applications. These on silicon substrates using atomic layer deposition. The constants these in 12–14 range the leakage currents 2.6×10−8–4.2×10−7 A/cm2 at 1 MV/cm electric field. It was found that as made thinner, value their constant dropped compared to bulk values. dominant current mechanism low fields determined be Schottky emission, whereas...

Thin HfO2 films have been deposited on silicon via atomic layer deposition using anhydrous hafnium nitrate [Hf(NO3)4]. Properties of these investigated x-ray diffraction, reflectivity, spectroscopic ellipsometry, force microscopy, photoelectron spectroscopy, and capacitance versus voltage measurements. Smooth uniform initiation film growth has detected H-terminated surfaces. As-deposited were amorphous, oxygen rich, contained residual NO3 NO2 moieties from the precursor. Residual nitrates...

We have used an excimer laser to photodeposit uniform (±5%) films of zinc oxide from dimethylzinc and nitrogen dioxide. Deposition rates 3000 Å/min over 2 cm×5 cm areas were obtained. measured the stress, refractive index, etch rate, adhesion, pinhole density, stoichiometry these photodeposited films.

We report the deposition of refractory metals chromium, molybdenum, and tungsten through laser-induced gas-phase photolysis their respective hexacarbonyls. A copper, hollow cathode laser was used at ultraviolet wavelengths matched to peaks in absorption spectra carbonyl molecules. Localized room-temperature metal achieved by focusing beam into a cell containing gas helium as buffer. No major differences were noted for on polished silicon wafer, thermally oxidized quartz flat.

Interdigitated electrode (IDE) arrays with nanometer-scale gaps have been utilized to enhance the sensitivity of affinity-based detection. The geometry nanogap IDEs was first optimized on basis simulations electric field and current density. It determined that gap (G) between electrodes most important geometric parameter in determining distribution strength density compared width (W) height (H) IDEs. Several devices were materialized analyzed for their electrochemical environment using...

Growth of smooth and continuous films WSe2 has been demonstrated by employing atomic layer deposition (ALD) on 5 cm × substrates. The substrates consisted silicon wafers with a SiO2. ALD precursors were WCl5 H2Se. film properties characterized using Raman spectroscopy x-ray photoelectron are comparable to those reported for produced chemical vapor exfoliation. Carrier mobilities determined back-gated transistors. With Pd contacts, median electron hole 531 cm2 V−1 s−1 354 s−1, respectively, measured.

Metal chalcogenides based on the C–M–M–C (C = chalcogen, M metal) structure possess several attractive properties that can be utilized in both electrical and optical devices. We have shown specular, large area films of γ-InSe Sb2Se3 grown via atomic layer deposition (ALD) at relatively low temperatures. Optical (absorption, Raman), crystalline (X-ray diffraction), composition (XPS) these been measured compared to those reported for exfoliated found similar. Heterostructures composed a...