A5061568958- Semiconductor Quantum Structures and Devices
- Semiconductor Lasers and Optical Devices
- Chalcogenide Semiconductor Thin Films
- Nanowire Synthesis and Applications
- Silicon and Solar Cell Technologies
- Spectroscopy and Laser Applications
- solar cell performance optimization
- Advanced Semiconductor Detectors and Materials
Korea Research Institute of Standards and Science
2024
University of Delaware
2024
Abstract Solid‐state infrared sources designed to emit wavelengths above 2 µm often face challenges in achieving high emission efficiency, minimizing power consumption, and reducing fabrication costs. In response, a 2.4 wavelength light emitting diode (LED) is developed using metamorphic 0.83 Ga 0.17 As/InAs 0.3 P 0.65 Sb 0.05 multiple quantum well (MQW) heterostructures. The substantial conduction (94 meV) valence band offsets (300 within this type‐I MQW LED architecture result strong...
Multijunction solar cells made from highly lattice‐mismatched (LMM) material systems offer an optimal bandgap combination for the ultrahigh conversion of energy to electricity. Conventional fabrication techniques multijunction cells, such as metamorphic epitaxy, direct wafer bonding, and adhesive are still expensive produce low yields owing use complex process steps sophisticated equipment. Herein, flexible GaAs/In 0.53 Ga 0.47 As dual‐junction with a large lattice mismatch 3.7% between...
A type I InAs(Sb)/InAsPSb strain engineered multiple quantum wells light emitting diodes system has been demonstrated. Tensile InAsPSb barriers with a high degree of band offset (∆EC = 116–123 meV, ∆EV 193–250 meV) were used to compensate for the compressive InAs(Sb) wells. The structure was grown on n+-InAsxP1−x metamorphic buffer relaxation (98%), low surface roughness (0.69 nm), and dislocation density. Through careful engineering design, reaches 0.57%–1.52% without relaxation....