- Organic Light-Emitting Diodes Research
- Organic Electronics and Photovoltaics
- Thin-Film Transistor Technologies
- ZnO doping and properties
- Semiconductor materials and devices
- Geophysical and Geoelectrical Methods
- Conducting polymers and applications
- Gas Sensing Nanomaterials and Sensors
- Molecular Junctions and Nanostructures
- Advanced Sensor and Energy Harvesting Materials
- Photonic and Optical Devices
- Advanced Fiber Optic Sensors
- Advancements in Semiconductor Devices and Circuit Design
- Geophysical Methods and Applications
- Geochemistry and Geochronology of Asian Mineral Deposits
- Metal Extraction and Bioleaching
- Phase-change materials and chalcogenides
- Luminescence and Fluorescent Materials
- Plasmonic and Surface Plasmon Research
- Electrical and Thermal Properties of Materials
- Optical Coatings and Gratings
- Quantum Dots Synthesis And Properties
- Geomagnetism and Paleomagnetism Studies
- Geochemistry and Geologic Mapping
- Antenna Design and Analysis
State Key Laboratory on Integrated Optoelectronics
2011-2025
Jilin University
2015-2025
Chinese Academy of Geological Sciences
2021-2023
Ministry of Natural Resources
2022-2023
Sinopec (China)
2021-2023
Sinopec Research Institute of Petroleum Processing
2023
Shanxi University
2022
Jilin Medical University
1999-2019
Soochow University
2013-2014
Sun Yat-sen University
2014
Herein, we employed inductively coupled plasma enhanced chemical vapor deposition using a hexamethyldisiloxane/O2 precursor to deposit SiO2 with electrical double layer capacitance on SiNx forming SiO2/SiNx stacked films as dielectric layer, achieving high-performance synaptic transistors. The effect of O2 concentration during the transistor performance was investigated. results Fourier transform infrared spectroscopy and x-ray photoemission confirm that increasing boosts amounts protons...
We studied the fluorescence enhancement of a dye-loaded polyphenylene dendrimer in gap 2-3 nm between silver film and single particles with an average diameter 80 nm. This sphere-on-plane geometry provides controllable plasmonic resonator defined dye position. A strong signal was seen from all particles, which at least 1000 times stronger than plane dye-coated metal surface. The emission profile varied showed light higher energies free dye, we assigned to hot luminescence. maximum peak...
In this Letter, we present the observation of super-intense upconversion (UC) white emission Yb2O3 under 980 nm excitation, its evolution on excitation power density, UC mechanism, and application luminescence converter dye-sensitized solar cells (DSSCs). It is significant to observe that demonstrates at least one order more intense than β-phase NaYF4:Yb3+, Er3+ Yb2O3/DSSCs exhibit much better photovoltaic performance Er3+/DSSCs strong excitation. This indicates would become a novel...
In this paper, pure metastable phase iron vanadate (FeVO4-II) ultrathin nanosheets (50 nm in thickness) with exposed {010} facets were obtained by a mild hydrothermal process, without the use of any template or organic surfactant. The photocatalytic rate FeVO4-II was measured taking advantage their unique morphology. Furthermore, catalyst could be easily separated and reused, simply applying an external magnetic field. addition, n-type semiconductor structure, FeVO4 exhibited gas-sensing for...
In this paper, an amorphous Ga2O3 metal–semiconductor–metal photodetectors passivated by the organosilicon layer were reported. Due to excellent passivation property of and diffusion effect hydrogen, responsivity was improved effectively, while dark state current is basically unchanged. The results x-ray photoelectron spectroscopy have proved that amount oxygen vacancy near interface between has been surface chemisorption suppressed via capping a foreign after deposition layer. with exhibit...
As material for flexible transparent electrodes organic photoelectric devices, the silver nanowires (AgNWs) have been widely studied. In this work, we propose a hybrid anode with photopolymer substrate, which is composed of spin-coating-processed AgNW meshes and zinc oxide (ZnO) prepared by low-temperature (60°C) atomic layer deposition. ZnO effectively fills in voids mesh electrode, thus able to contact device all over active area, allow efficient charge extraction/injection. Furthermore,...
This letter demonstrates a novel approach to fabricate the high-performance a-InGaZnO thin-film transistors via using capacitive coupled plasma-assistant magnetron sputtering with low post annealing temperature (100 °C). The influence of radio frequency generated plasma power during deposition has been intensively investigated. With at room temperature, best transistor exhibits high mobility 26.03 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Silicon nanowires are important semiconductor with core/shell structure. In this work, the piezoelectric material alpha-quartz was grown in interface of silicon by thermal treatment at 600 °C for 0.5 h. These were employed as starting materials to fabricate nanogenerators, which could convert kinetic energy into electrical one, exhibiting an output voltage 36.5 V and a response current 1.4 μA under free-falling object 300 g height 30 cm.
Abstract Melanin comes from a wide range of sources. It can be isolated and characterized some plants, animals microorganisms, also simply polymerized by dopamine. has many biological properties such as antioxidant, ultraviolet shielding bacteriostasis. Based on the above characteristics, addition melanin to film-forming materials improve relevant physical functional film. In this article, structure were briefly introduced, then advantages related research progress filler in field composite...
We report spectroscopic and electrical measurements to explore hole injection conduction in devices comprising a molybdenum sub-oxide (MoOx) layers poly[(9,9-dioctylfluorenyl-2, 7-diyl)-co-(4,4’(N-(4-sec-butylphenyl))) diphenylamine](TFB) transporting polymer. improvements device conductivity over benchmark structures incorporating an ITO electrode polyethylenedioxythiophene polystyrene sulfonate (PEDOT:PSS) furthermore achieve from MoOx TFB that is efficient even with underlying low...
In the past several years, phase change materials (PCMs) have been widely applied in energy-saving non-volatile photonic devices, such as active perfect absorbers, nanopixel displays and all-photonic memories.
The Qingchengzi orefield is an important polymetallic ore concentration zone in the northern margin of North China Craton (NCC). region has significant metallogenic potential for deep mining. Many areas with gold mineralization have been found shallow area Taoyuan–Xiaotongjiapuzi–Linjiasandaogou east orefield. To assess distribution levels, we carried out exploration using transient electromagnetic method (TEM). A superconductive quantum interference device (SQUID) magnetometer and a...
The organic compound, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) is used as a light outcoupling layer in top-emitting light-emitting devices with tris(8-hydroxyquinoline) aluminum emission layer. It found that, addition to the improvement of electroluminescent (EL) intensity and luminous efficiency factor 1.6, BCP capping causes blueshift EL spectra larger full width at half maximum (FWHM). A FWHM 50nm attributed reduction cathode reflectivity. In meantime, caused by increase...
In this paper, an improved ac pixel electrode circuit for active-matrix organic light-emitting display (AMOLED) has been proposed by adding a thin-film transistor. This can provide driving mode AMOLED and makes the OLED in reversed-biased voltage during reverse cycle. And design understanding was presented. The simulation results indicate that is feasible. structure practical driver; it improve performance of OLED.
The phase shift on the reflection from a semitransparent electrode of top-emitting organic light-emitting device is utilized in this paper to realize deep blue emission with high efficiency. could be adjusted by changing thickness Alq(3) when it was deposited onto device. Through simulation found that resonant wavelength occurs certain range, which concerned and cavity length between two reflective electrodes. According simulation, designed structure demonstrated experimentally using such...
Ga2O3 has received increasing interest for its potential in various applications relating to solar-blind photodetectors. However, attaining a balanced performance with Ga2O3-based photodetectors presents challenge due the intrinsic conductive mechanism of films. In this work, we fabricated amorphous (a-Ga2O3) metal–semiconductor–metal through capacitive coupled plasma assisted magnetron sputtering at room temperature. Substantial enhancement responsivity is attained by regulating...
Titanium nitride (TiN) is a metal-like refractory material that can be used as substitution for metals in many applications. In this paper, we report the use of an ultra-thin TiN film Salisbury screen structure to spectral selectively absorb visible light forming optical color filter. The functions partial reflector well protection capping layer structure. Spectral selective perfect absorption filters with TiN-ZnO-Al multilayer films were fabricated and characterized.