Force feedback from damped oscillation is a common effect in our daily lives, especially when shaking an elastic object, object hanging or containing other stuff, container with liquid, e.g., casting fishing pole wine-swirling. Such force, affected by complex physical variations and collisions, difficult to properly simulate using current force methods. Therefore, we propose ElastOscillation on virtual reality (VR) controller provide 3D multilevel for enhance VR experiences. consists of...

On the basis of a Pt/In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.52</sub> Al xmlns:xlink="http://www.w3.org/1999/xlink">0.48</sub> As metal-semiconductor structure, novel hydrogen sensor is fabricated and demonstrated. The studied Schottky diode-type exhibits significant sensing performance including high relative sensitivity ratio about 2600% (under 1% H xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /air gas V...

The influences of (NH/sub 4/)/sub 2/S/sub x/ treatment on an AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) are studied and demonstrated. Upon the sulfur passivation, device exhibits better temperature-dependent dc microwave characteristics. Experimentally, for a 1/spl times/100 /spl mu/m/sup 2/ gate/dimension PHEMT with higher gate/drain breakdown voltage 36.4 (21.5) V, turn-on 0.994 (0.69) lower gate leakage current 0.6 (571) mu/A/mm at V/sub GD/=-22 improved...

A new and interesting field-effect resistive hydrogen sensor, based on the current-voltage characteristics in linear region of an AlGaAs-based pseudomorphic high-electron-mobility transistor structure high sensitivity a palladium (Pd) metal, is studied demonstrated. An oxide layer between Pd AlGaAs used to increase number adsorption sites, improve detection sensitivity. simple model employed interpret sensing mechanism. The dissociation H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...

An interesting Pd-AlGaN/GaN Schottky diode-type hydrogen sensor with ultrahigh sensing responses is fabricated and studied. A response (S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">F</sub> ) of 2.04 times 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> a widespread barrier height variation (Deltaphi xmlns:xlink="http://www.w3.org/1999/xlink">B</sub> 400 meV are observed upon exposure to 9660 ppm H...

An interesting hydrogen sensor based on an Al/sub 0.24/Ga/sub 0.76/As Schottky barrier high-electron mobility transistor with a catalytic Pd metal/oxide/semiconductor is fabricated and demonstrated. In comparison traditional diodes or capacitance-voltage type sensors, the studied device exhibits larger current variation, lower detection limit, shorter transient response time. Besides, good hydrogen-sensing properties, such as significant drain change, threshold voltage shift,...

In this paper, the interesting hydrogen sensing properties of a Pd-gate AlGaN/GaN Schottky diode are investigated. A significantly low detection limit 850 ppb H2/air gas can be observed with increasing temperature to 423 K. The experimental results indicate that molecules cause great influences on breakdown voltage. Also, exhibits an ultrahigh response 2.04×105 at K when exposure 9660 ppm gas. transient time and reversibility studied device improved by operating temperature.

The interesting hydrogen sensing properties of a Pt-oxide-GaN metal-oxide-semiconductor-type Schottky diode are comprehensively studied and demonstrated. In the hydrogen-containing environment, shift in current-voltage curves decrease turn-on voltage found to be caused by lowering barrier height. Also, corresponding series resistance is decreased from 191.8 (in air) 155.3 Ω (for 9970 ppm H2/air gas) at 30 °C. As carrier gas replaced nitrogen gas, significant variation 0.32 V 19.56 Von Rs...

By combining the advantages of a catalytic metal Pd with high-performance AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (PHEMT), an interesting hydrogen sensor is fabricated and demonstrated. For proposed device, 50 Å undoped GaAs cap layer grown to prevent Al0.24Ga0.76As Schottky from oxidizing reduce Fermi level pinning effect. Experimentally, high sensitivity SJ value 275.8 µA/mm·ppm H2/air can be obtained at concentration 14 ppm H2/air. Even very low (≤4.3 H2/air)...

Performance-based digital puppetry has gained widespread popularity in various fields, including gaming, storytelling, animation editing, etc. Human hands are well-suited for manipulating avatars with their skill and ability to perform multiple movements. In this work, we adopted the finger-walking technique, a natural intuitive method of performance, as an interface controlling human avatars. We first conducted preliminary study explore range movements preferred by casual users identified...

Blind and visually impaired (BVI) people primarily rely on non-visual senses to interact with a physical environment. Doing so requires high cognitive load perceive memorize the presence of large set objects, such as at home or in learning setting. In this work, we explored opportunities enable object-centric note-taking by using 3D printing pen for interactive, personalized tactile annotations. We first identified benefits challenges self-created graphics formative diary study. Then,...

Conformal passivation on an InGaP/GaAs HBT with significant reduction in the base surface-recombination effect is demonstrated. Not only dc behaviors but also RF performances are remarkably improved compared conventional emitter-ledge structure. Based conformal passivation, i.e., surface covered by depleted InGaP ledge structure and sulfur ((NH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> )...

Comprehensive and systematical comparisons of temperature-dependent characteristics In0.42Al0.58As/In0.46Ga0.54As metamorphic heterostructure field-effect transistors (MHFETs) with various Schottky gate alloys are studied demonstrated. The influence the barrier height on impact ionization effect its associated device performance also investigated. Better dc microwave can be obtained by using higher metal work function alloys, e.g., Ti/Au, Ni/Au Pt/Au. In particular, a Pt/Au alloy shows...

Comprehensive studies of temperature-dependent gate-metal-related impact ionization in metamorphic high electron mobility transistors (MHEMTs) are demonstrated. It is known that, from experimental results, the electric field and temperature dependences mechanisms MHEMT’s operation dominated by threshold energy hot population. The peak ionization-induced gate current could be substantially decreased presence specific contact with a higher Schottky barrier height. Therefore, suppressions...

The temperature-dependent characteristics of -passivated pseudomorphic high electron mobility transistors were studied and demonstrated. Due to the use sulfur passivation, remarkable improvements in device performance, including higher forward turn-on voltage, reverse breakdown lower leakage current, transconductance, on-resistance, more linear operating regime, superior microwave obtained. In addition, sulfur-passivated devices also show good properties temperature regime relatively...

A new and interesting field-effect resistive hydrogen sensor that is based on a Pd/oxide/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structure, fabricated studied. simple model proposed to elucidate the adsorption sensing mechanisms. The reaction of device studied with gas results in considerable decrease channel resistance. resistance curves response demonstrate this shows good reversible, repeatable, concentration-dependent properties. In comparison other resistor-type...