A5020949071- Magnetic properties of thin films
- Heusler alloys: electronic and magnetic properties
- Molecular Junctions and Nanostructures
- Quantum and electron transport phenomena
- Advanced Fiber Optic Sensors
- Graphene research and applications
- Photonic and Optical Devices
- Multiferroics and related materials
- Optical Network Technologies
- ZnO doping and properties
Beihang University
2017-2024
Johannes Gutenberg University Mainz
2024
Vellore Institute of Technology University
2015
Asian Institute of Technology
2015
In magnetic tunnel junctions (MTJs), an antiferromagnetic iridium manganese (IrMn) layer neighboring a ferromagnetic electrode is indispensable for pinning the magnetization of ferromagnet. The effect its antiferromagnetism on adjacent ferromagnet and, thus, quantum transport is, nevertheless, scarcely studied. Here, we investigate role antiferromagnetically orientated Mn spins in IrMn spin-dependent tunneling IrMn/FeCo/MgO/FeCo/IrMn MTJ by analyzing magnetoresistance (TMR) effect. opposite...
This paper deals with mathematical modeling and study of nonlinear switching in optical fiber Bragg gratings (FBG) by a transfer matrix method. Critical parameters contributing to high performance grating were studied. The transmission spectrum centered at 1550 nm was analyzed varying number layers refractiveindices. showed that proper modification length the FBG, we able optimize for required application. behavior FBGs can be further applied applications (all-optical logic gates).
Using first-principles calculations, we explore the role of an anti-ferromagnetic heavy-metal, L1$_0$-IrMn, as a capping layer in perpendicular magnetic tunnel junction (\emph{p}-MTJ). A comparative study is conducted by employing conventional non-magnetic heavy-metals (Ta, W or Mo) layers along with IrMn symmetric-MTJ X/FeCo/MgO/FeCo/X, where X=Ta, W, Mo IrMn. Firstly, calculations without including spin-orbit coupling (SOC) are presented highest TMR achieved IrMn-IrMn MTJ compared to that...