This letter reports a novel back-to-back E-shaped defected ground structure (DGS) and two-side loading scheme for miniaturized dual-band substrate integrated waveguide (SIW) bandpass filter designs.The SIW loaded by DGS supports evanescent-mode wave propagation below the cut-off frequency of SIW, while achieves two transmission poles at passband controllable zero points.Furthermore, different-sized resonators on sides is proposed designs.To validate design analysis, 2.4-/5.2-GHzfilter...

To overcome limitations on bandwidth extension in conventional design techniques, a novel pole-converging technique with transformer feedback for intrastage is proposed and analyzed this paper. For verification, three-stage cascode low-noise amplifier (LNA) based the pole converging negative drain-source designed implemented 65-nm CMOS technology. Consuming 27 mW dc power from 1.8 V supply, fabricated prototype exhibits peak gain of 18.5 dB, minimum noise figure 5.5 3-dB 30 GHz, fractional...

This letter presents a wideband millimeter-wave low-noise amplifier (LNA) in 65 nm CMOS technology. The adopts five-stage cascode topology with L-type input matching and T-type output matching. By distributing the peak gains of first four stages at two frequency points, LNA achieves flat gain response over wide bandwidth. measurement results show that features 16.7 dB 104 GHz, minimum NF 7.2 dB, 3 bandwidth 21.5 GHz. consumes 48.6 mW occupies compact core area 0.05 mm <sup...

This study presents a hard-switching full-bridge DC-DC converter with synchronous rectification based on Gallium Nitride (GaN) transistors to evaluate the advantages of GaN devices in power supplies. In comparison traditional silicon-based devices, are utilized both primary and secondary stages converter, exploiting GaN’s lower on-resistance enhance performance. The operates at switching frequency 300 kHz, an input voltage range 36 V 75 V, delivering output 28 V/42 A. Experimental results...

This paper presents the design of a compact 60-GHz phase shifter that provides 5-bit digital control and 360° range for beam-forming systems. The is designed using proposed cross-coupled bridged T-type topology switched-varactor reflective-type topology. topologies are analyzed small-signal equivalent circuit model. Furthermore, equations derived investigated. To validate theoretical analysis, shifters in commercial 65-nm CMOS technology. fabricated features good performance 32 states from...

This paper presents the analysis and design of a novel broadband low-noise amplifier (LNA) with larger than seven-octave bandwidth. To achieve good impedance matching, flat gain, low noise over bandwidth, combination technique shunt-resistive feedback, dual inductive-peaking techniques as well compact improved active load supporting RF biasing from dc to 20 GHz, is proposed for LNA design. The gain improvement principles are also analyzed theoretically. Based on theoretical study,...

In this letter, the novel ladder-like directors are proposed and investigated for antenna gain bandwidth enhancement. First, single-stage director is introduced to quasi-Yagi design improve directivity in endfire direction. Then, further enhance performance, multistages of form structures that co-designed with antenna, careful considerations mutual coupling effects. To validate concept, a 60-GHz using designed fabricated. The simulation results reveal an improvement 2.2–3.4 dB 30% by...

In this paper, the stress memorization technique (SMT) effects upon ultra-wideband RF switch performance are investigated for first time. Low insertion loss (IL), high isolation, (dc to 50 GHz) single-pole double-throw (SPDT), and four-throw (SP4T) switches designed with commercial 0.13- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> high-resistivity (HR)...

Quasi-lumped-element low-pass filter (LPF) and high-pass (HPF) based on substrate-integrated suspended line (SISL) technology are presented in this paper. Double interdigital capacitor, which has advantages of high capacitance density quality factor, is analyzed designed to minimize the size. Based theoretical analysis, quasi-lumped-element SISL LPF HPF prototypes designed. The experimental results show that achieves ultra-wide stopband up 24 f <sub...

In this paper, a design method for tunable liquid crystal (LC)-based metamaterial absorber (MMA) with the compact unit cell and wideband absorption is proposed. A LC-based MMA dimension of 0.204 λ × designed based on method, full-wave numerical simulations experiments are conducted to demonstrate its performance. Results show that central frequency tuned from 11.04 10.21 GHz as bias voltage increases null saturation, tuning range reaches up 7.8%. The exhibits arbitrary states. Moreover,...

The letter presents a compact 3-bit 90 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex Notation="TeX">$^{\circ}$</tex></formula> phase shifter for phased-array applications at the 60 GHz ISM band (IEEE 802.11ad standard). designed is based on reflective-type topology using proposed reflective loads with binary-weighted digitally-controlled varactor arrays and transformer-type directional coupler. measured eight...

This letter presents a low-power low-phase-noise VCO with self-adjusted active resistor (SAAR). A pair of PMOS transistors is introduced between cross-coupled pairs and LC-tank, serving as the SAAR. When transistor resides in saturation region, SAAR exhibits small resistance, enabling fast switching suppressing flicker noise up-conversion to 1/f <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> phase noise. Moreover, enters triode will...

In this brief, a 0.1 to 23 GHz low-noise amplifier (LNA) employing frequency-dependent feedback loop (FDFL) is presented. As predicted theoretically, the optimized FDFL enhances bandwidth and gain flatness in desired frequency band through purposely designing characteristics from negative positive corresponding frequency. Based on theoretical analysis of enhancement, noise characteristic, linearity FDFL, an ultra-broadband LNA, utilizing proposed technique, designed verified experimentally...

The fast and sensitive detection of methanol gas using cost-effective sensors in the industry is a significant issue to be addressed. Herein, polyindole (PIn)-deposited substrate integrated waveguide (SIW) has been introduced perform quantitative qualitative sensing with quick response recovery time at room temperature. First, PIn synthesized deposited microwell etched intensified electric field region microwave-based cavity resonator, which gives through variation PIn's high-frequency...

The 28GHz band for fifth-generation (5G) millimeter-wave wireless communication supporting high-order QAM, OFDM, and carrier aggregation (CA) requires excellent power spectrum efficiency higher data-rate throughput. High-order modulation often forces amplifiers (PAs) to operate at deep back-off (PBO) (i.e., 12dB or even higher), where typical PAs always suffer from degradation. Therefore, enhancement PBO is critical improving the average of transmitters.

To further improve the short-term forecasting ability of critical frequency ionosphere F2 layer (foF2), a sample entropy optimized deep learning long-short-term memory (LSTM) model based on improved complete ensemble empirical mode decomposition with adaptive noise (ICEEMDAN) is proposed. The ICEEMDAN-LSTM uses foF2 hour-level time series data Dourbes station from 2009 to 2019 for training and verification realizes single-step high-precision forecast. Through statistical analysis observation...

The letter reports a 57-67 GHz bidirectional low-noise amplifier power (LNAPA) design. To eliminate the use of T/R switches, matching networks are introduced to connect LNA and PA core circuits in parallel satisfy isolation requirements with full consideration input/output PA. Thus, operation modes simply selected by gate biasing circuits. Fabricated commercial 65-nm CMOS technology, Rx mode features peak gain 21.5 dB > 17 over GHz, NF 6.7 PDC 39.6 mW, while Tx achieves 24.5 57-65 PSAT 8.4...

This paper presents two 130-180-GHz single-pole double-throw (SPDT) switches in 65-nm CMOS. A new topology using artificial resonator and auxiliary magnetically coupled-lines is introduced to alleviate the bulky lossy transmission lines used conventional SPDT designs. Besides its compact size, based features lower loss as compared lines. First, small-signal equivalent circuit models of shunt n-type field-effect-transistor are developed investigated. Second, linearity analysis proposed switch...

The paper reports a SPDT switch operating from 220 to 285 GHz in 65-nm bulk CMOS.The switchable resonator concept by using three coupled-lines topology is proposed and adopted the design.Equivalent circuit models are introduced for analyzing operation mechanism of switch.The fabricated features measured insertion loss 4.2 dB including RF pad losses, isolation 19 dB, return better than 10 simulated P 1dB 9.2 dBm, zero power consumption.To best authors' knowledge, this achieves highest...

A fully integrated 93.4-104.8-GHz 57-mW fractional-N cascaded phase-locked loop (PLL) with true in-phase injection-coupled quadrature voltage-controlled oscillator (QVCO) is reported. By cascading the PLL and subsampling PLL, good phase noise, high resolution, wide acquisition range are achieved simultaneously. The transformer-based injection coupled technique adopted in QVCO to obtain both low noise low-power consumption. proposed was fabricated a 65-nm CMOS technology silicon size of 0.88...

This paper presents a fully integrated stimulator using dynamic bulk biasing technique and control scheme in 180-nm CMOS technology. Unlike the conventional method, bias voltage is dynamically set according to different stimulation phases. It avoids underlying leakage current paths, improves maximum compliance (MSVC). Together with scheme, high interface designed overcome limitation of breakdown substrate diode ( V <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML"...