Extremely high data rate communication can potentially be achieved by combining high-order modulations and wide bandwidths at millimeter-wave (mm-wave) frequencies. However, it has been challenging to practically implement this combination, even if the SNR of system appears sufficiently high. An explanation from a recent theoretical study is that practical rates in mm-wave systems are limited local oscillator (LO) white phase noise. In letter, we present an experimental investigation on...

Wireless backhaul using line-of-sight MIMO (LOS-MIMO) has the potential to support increased data-rate demands brought by introduction of fifth generation mobile access technology. In this paper, we present results from an outdoor 1.5-km link eight LOS-MIMO streams in a single channel. The operated at E-band (70/80 GHz) commercial radios and unsynchronized oscillators. An aggregated throughput 139 Gbps was achieved with 99.965% availability, resulting spectrum efficiency 55.6 bps/Hz....

This letter presents guidelines for the design of low phase noise oscillators in GaN high electron mobility transistor (HEMT) technology. The starts from bias-dependent low-frequency (LF) measurements. Oscillator topology and bias point are then chosen operation regions where LF is low. best properties obtained drain voltage current. Thus, can be achieved at dc power which also means that normalized figure merit (FOM) will good. Two different have been designed measured. A 9.9 GHz...

Ahstract- This manuscript presents results of wireless realtime data transmission at 143 GHz. The transmitter/receiver (TxlRx) front-end circuitry is integrated on a single monolithic microwave circuits (MMICs), realized in 250-nm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. Tx module shows gain 12 dB GHz with output power -2.3 dBm 1 compression. Rx has 15 noise figure (NF) 13 minimum NF 10 measured 132 TxlRx modules were two radio units to demonstrate...

This letter presents a radio frequency micro-electromechanical systems (RF-MEMS) tuned cavity oscillator for X-band. The active part of the is implemented in GaN-HEMT MMIC technology. RF-MEMS-switches are realized on quartz substrate that surface mounted low loss PCB. PCB intruded an aluminum acting as electrically moveable wall. For three-row RF-MEMS setup, tuning range 5 % around oscillation 10 GHz demonstrated measurements. phase noise -140 dBc/Hz to -129 at 100 kHz from carrier,...

This paper presents an X-band balanced Colpitts oscillator in GaN HEMT technology and a method to calculate its phase noise accurately. The employs low-frequency (LF) measurement the waveforms from harmonic-balance simulator. These data are post-calculated by Hajimiri's phase-noise model, which LF can be activated with cyclo-stationary effect calculation of noise. Compared commercial simulation using predefined stationary noise, gives significantly improved prediction 30-dB/decade region...

This paper reports on an ultra-low phase-noise oscillator based a GaN HEMT monolithic microwave integrated circuit reflection amplifier and aluminum cavity resonator. It is experimentally investigated how the oscillator's phase noise depends coupling factor, matching, bias condition of amplifier. For optimum position -145 dBc/Hz -160 at offsets 100 400 kHz, respectively, from 9.9-GHz carrier frequency reached. is, to best authors' knowledge, record in reported performance for any device. The...

This letter reports on effects of Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> and Al xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O surface passivation as well different deposition methods the low-frequency noise (LFN) characteristics for AlInN/AlN/GaN high electron mobility transistors (HEMTs). Two samples are passivated with , deposited by two methods: 1) thermal atomic...

This paper presents a MMIC GaN HEMT Voltage- Controlled-Oscillator (VCO). The VCO is tunable between 6.45-7.55 GHz with good tuning linearity, average output power about 1 dBm, and phase noise little variation over the range. For bias of Vd /Id = 6 V/33 mA, measured -98 dBc/Hz @ 100 kHz -132 MHz offset frequencies, respectively. To author's best knowledge, this lowest reported for in technology comparable oscillation frequency also to state-of-the-art GaAs-InGaP HBT VCOs similar

This paper reports on a negative resistance 15 GHz GaN HEMT oscillator using quasi-lumped integrated resonator. The resonator is based lumped element parallel LC and piece of transmission line acting as impedance transformer phase compensation. main advantage this type that it gives good flexibility in choice level so easy to control the coupling factor between active device which mandatory reach noise. An excellent noise -106 dBc/Hz@100 kHz from carrier experimentally demonstrated. also...

This paper presents low frequency noise (LFN) measurements of some commonly used microwave transistor technologies, e.g., GaAs-InGaP HBT, GaAs pHEMT, and GaN HEMT. It investigates how the flicker scales with current voltage in different technologies. The target application is low-phase oscillators. From this perspective, low-frequency at given normalized to DC power as benchmark parameter. A comparison between measurement set-ups also included. problem measuring high drain voltages currents...

This paper reports on a real-time radio-link at W-band (92–114 GHz). 10 Gbps peak rate is reached for 2000 MHz carrier bandwidth, and 5.7 demonstrated over link-hop of 1.5 km 1500 MHz-carrier, running 128 QAM 32 QAM, respectively. High integrated radio front-end SIP modules using GaAs technology, achieves linear TX channel power +8 dBm, RX NF 8 dB from the radio. It configured to achieve in link with 149 system gain.

This paper reports on 130 GHz transceiver modules consisting of integrated multi-functional chipsets in a commercial 130nm SiGe BiCMOS process. The interconnect between the chipset and package is non-galvanic realized silicon micromachining technique. After successful fabrication assembly, individual Tx Rx as well combined Tx-Rx link were tested using CW signals. Then realtime data transport over carried out different modulation formats bandwidths. With 16QAM 750 MHz channel 2.66 Gbit/s rate...

This paper reports on a 143 GHz radio link, evaluated in long-term outdoor measurements over 200 m hop-length. The link has been characterized with variable attenuator back-to-back configuration. For the tests received power level and signal quality have monitored for two months under various weather conditions. shows highest throughput of 5.3 Gbps using 64 QAM 1 carrier bandwidth. corresponding mean squared error demodulated is -25 dB, receiver sensitivity -42 dBm 3 dB penalty compared to...

This paper reports on an experimental analysis of phase noise in a tuned-input/tuned-output oscillator based bare-die GaN HEMT device. To investigate dependency resonator coupling factor (β), the circuit is designed with flexibility to modify resonant tank, terms unloaded quality (Q <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> ) and impedance level. The reflection coefficient (Γ xmlns:xlink="http://www.w3.org/1999/xlink">amp</sub>...

This paper presents low frequency noise (LFN) measurements of some commonly used microwave transistor technologies, e.g., GaAs-InGaP HBT, GaAs pHEMT, and GaN HEMT. It investigates how the flicker scales with current voltage in different technologies. The target application is low-phase oscillators. From this perspective, low-frequency at given normalized to DC power as benchmark parameter. A comparison between measurement set-ups also included. problem measuring high drain voltages currents...

This paper reports on a Voltage-Controlled-Oscillator (VCO) chip set covering 7-13 GHz with phase noise better than -125 dBc/Hz at 1 MHz off-set. The is implemented in GaN HEMT MMIC technology and designed for use satellite transponders. 6 VCOs are used to cover the full range, each of them has tuning range about output power order 5 dBm. chosen good radiation hardness high capability, enabling signal-to-noise ratio far-carrier performance which needed future wideband communication systems.

This paper reports on an X-band varactor-tuned cavity oscillator. The varactors are mounted a low loss printed circuit board (PCB) that is intruded inside the cavity, which enables efficient coupling to RF-field. varactors' positions changed by adjusting intrusion depth of PCB as well horizontal PCB. compromises between tuning range and resonator Q-factor. active part, i.e., reflection amplifier, implemented in GaN-HEMT MMIC technology. A microstrip line couples amplifier. factor can be...

This paper reports on a very low phase-noise GaN HEMT cavity oscillator at 8.5 GHz based reflection amplifier with electronic gain control. The control functionality is essential in order to the open loop gain, which critical for phase noise performance. A large forces deep compression, resulting increased conversion and degraded noise. On other hand, sufficient margin mandatory ensure satisfaction of oscillation condition that covers temperature drift individual spread. uses varactors...

We report on the development of a non-galvanic transition from silicon micromachined to metallic rectangular waveguide for use in integrated systems at D-band (110-170 GHz). This overcomes limitations current solutions that require proper ohmic (galvanic) contact between both waveguides, and thus relaxes tolerance requirements assembly manufacturing. The uses an in-plane design which enables low-loss integration components, as it eliminates need bends complex multi-layer structures. describe...

This paper reports on the analysis of a radio frequency microelectromechanical systems (RF-MEMS) tuned cavity oscillator X -band based GaN-HEMT monolithic microwave integrated circuit reflection amplifier. The RF-MEMS-switches are mounted low-loss printed board (PCB) intruded in an aluminum that is coupled to microstrip line connected investigates influence number switches as well their positions with respect phase noise and tuning range. Vertical horizontal varied target optimum trade-off...