A5068763014- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
- Quantum optics and atomic interactions
- Photonic and Optical Devices
- Quantum Dots Synthesis And Properties
- Quantum and electron transport phenomena
- Advanced Semiconductor Detectors and Materials
- Semiconductor Lasers and Optical Devices
- Acoustic Wave Resonator Technologies
- Luminescence Properties of Advanced Materials
- Nanowire Synthesis and Applications
- GaN-based semiconductor devices and materials
- Catalytic Processes in Materials Science
- Ocular and Laser Science Research
- Semiconductor materials and interfaces
- Physics of Superconductivity and Magnetism
- Mechanical and Optical Resonators
- Cold Atom Physics and Bose-Einstein Condensates
- Anodic Oxide Films and Nanostructures
- Advanced Optical Sensing Technologies
- Electronic and Structural Properties of Oxides
- TiO2 Photocatalysis and Solar Cells
- Advanced Physical and Chemical Molecular Interactions
- Surface and Thin Film Phenomena
- Optical Imaging and Spectroscopy Techniques
Boise State University
2019-2024
Micron (United States)
2019-2024
Argonne National Laboratory
2022-2024
University of Chicago
2022-2024
California NanoSystems Institute
2019
University of California, Los Angeles
2019
Rare-earth ion dopants in solid-state hosts are ideal candidates for quantum communication technologies, such as memories, due to the intrinsic spin–photon interface of rare-earth combined with integration methods available solid state. Erbium-doped cerium oxide (Er:CeO2) is a particularly promising host material platform memory, it combines telecom-wavelength (∼1.5μm) 4f–4f transition erbium, predicted long electron spin coherence time when embedded CeO2, and small lattice mismatch silicon....
Research into self-assembled semiconductor quantum dots (QDs) has helped advance numerous optoelectronic applications, ranging from solid-state lighting to photodetectors. By carefully controlling molecular beam epitaxy (MBE) growth parameters, we can readily tune QD light absorption and emission properties access a broad portion of the electromagnetic spectrum. Although this field is now sufficiently mature that QDs are found in consumer electronics, research efforts continue expand new...
Isolated solid-state atomic defects with telecom optical transitions are ideal quantum photon emitters and spin qubits for applications in long-distance communication networks. Prototypical defects, such as erbium, suffer from poor emission rates, requiring photonic enhancement using resonant cavities. Moreover, many of the traditional hosts erbium ions not amenable to direct incorporation existing integrated photonics platforms, limiting scalable fabrication qubit-based devices. Here, we...
The authors have established a robust set of growth conditions for homoepitaxy high-quality InAs with (111)A crystallographic orientation by molecular beam epitaxy (MBE). By tuning the substrate temperature, obtain transition from 2D island mode to step-flow growth. Optimized MBE parameters (substratetemperature=500°C, growthrate=0.12ML/s, and V/IIIratio≥40) lead extremely smooth InAs(111)A films, free hillocks other 3D surface imperfections. see correlation between smoothness optical...
Quantum dots that store large tensile strains represent an emerging research area. We combine experiments and computational modeling to investigate the self-assembly of Ge GaAs tensile-strained quantum (TSQDs) on In0.52Al0.48As(111)A. Comparing these two nominally similar material systems highlights how differences in adatom kinetics leads distinct features TSQD self-assembly. The energy barrier diffusion adatoms is higher than for Ga adatoms, while forming a stable island requires six atoms...
Rare-earth ion dopants in solid-state hosts are ideal candidates for quantum communication technologies such as memory, due to the intrinsic spin-photon interface of rare-earth combined with integration methods available solid-state. Erbium-doped cerium oxide (Er:CeO$_2$) is a particularly promising platform it combines telecom-wavelength (~1.5 $\mu$m) 4f-4f transition erbium, predicted long electron spin coherence time supported by CeO$_2$, and also near lattice-matched silicon...
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Erbium-doped \ch{TiO2} materials are promising candidates for advancing quantum technologies, necessitating a thorough understanding of their electronic and crystal structures to tailor properties enhance coherence times. This study explored epitaxial erbium-doped rutile films deposited on r-sapphire substrates using molecular beam epitaxy. Photoluminescence excitation spectroscopy demonstrated decreasing fluorescence lifetimes with erbium doping, indicating limited Lattice distortions...
Erbium-doped TiO2 materials are promising candidates for advancing quantum technologies, necessitating a thorough understanding of their electronic and crystal structures to tailor properties enhance coherence times. This study explored epitaxial erbium-doped rutile films deposited on r-sapphire substrates using molecular beam epitaxy. Photoluminescence excitation spectroscopy demonstrated decreasing photoluminescence lifetimes with erbium doping, indicating limited optical Lattice...
Rare earth ions (REIs) have emerged as a promising platform for quantum technology, especially memories – given their long optical and spin coherence times. Along with brief review of progress in the field, we show that doped thin films on silicon can be engineered to approach properties shown bulk REI crystals leverage CMOS nanofabrication methods development integrated devices.