Abstract Poly(N-isopropylacrylamide) (PNIPAm) is widely used to fabricate cell sheet surfaces for culturing, however copolymer and interpenetrated polymer networks based on PNIPAm have been rarely explored in the context of tissue engineering. Many complex expensive techniques employed produce PNIPAm-based films culturing. Among them, spin coating has demonstrated be a rapid fabrication process thin layers with high reproducibility uniformity. In this study, we introduce an innovative...

For the brain-inspired neuromorphic computing, various emerging memory devices, including FeFET, have been applied to develop artificial synapses, while neurons are still mostly CMOS-implemented and suffer from high-hardware-cost issue, especially when expanding advanced functions. In this work, a novel leaky-FeFET (L-FeFET) based on partially crystallized Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr O...

Structural color based on Fabry–Perot (F-P) cavity enables a wide gamut with high resolution at submicroscopic scale by varying its geometrical parameters. The ability to design such parameters that can accurately display the desired is therefore crucial manufacturing of F-P cavities for practical applications. This work reports first inverse structure using deep learning through bidirectional artificial neural network. It production significantly wider coverage space over 215% sRGB...

Abstract Two‐terminal memristor has emerged as one of the most promising neuromorphic artificial electronic devices for their structural resemblance to biological synapses and ability emulate many synaptic functions. In this work, a based on back‐end‐of‐line (BEOL) material silicon carbide (SiC) is developed. The thin film memristors demonstrate excellent binary resistive switching with compliance‐free self‐rectifying characteristics which are advantageous implementation high‐density 3D...

The distorted octahedral complexes [SnCl4{nBuSe(CH2)nSenBu}] (n = 2 or 3), (1) and (2), obtained from reaction of SnCl4 with the neutral bidentate ligands characterized by IR/Raman multinuclear (1H, 77Se{1H} 119Sn) NMR spectroscopy X-ray crystallography, serve as very effective single source precursors for low pressure chemical vapor deposition (LPCVD) microcrystalline, phase tin diselenide films onto SiO2, Si TiN substrates. Scanning Electron Microscopy (SEM) Atomic Force (AFM) imaging show...

The molecular Sn(iv) complexes, [SnCl4{nBuS(CH2)3SnBu}] (2), [SnCl4(nBu2S)2] (3) and [SnCl4(nBu2Se)2] (4) have been prepared in good yield from reaction of SnCl4 with the appropriate chalcogenoether ligand anhydrous hexane and, together known [SnCl4{nBuSe(CH2)3SenBu}] (1), employed as single source precursors for low pressure chemical vapour deposition corresponding tin dichalcogenide thin films. At elevated temperatures bidentate precursors, (1) also form monochalcogenides, SnSe SnS,...

Amorphous silicon carbide (a-SiC) based resistive memory (RM) Cu/a-SiC/Au devices were fabricated and their switching characteristics investigated. All four possible modes of nonpolar achieved with ON/OFF ratio in the range 106–108. Detailed current-voltage I-V analysis suggests that conduction mechanism low resistance state is due to formation metallic filaments. Schottky emission proven be dominant high which results from contacts between metal electrodes SiC. ratios exceeding 107 over 10...

The "one-to-many" problem is a typical challenge that faced by many machine learning aided inverse nanophotonics designs where one target optical response can be achieved solutions (designs). Although novel training approaches, such as tandem network, and network architecture, the mixture density model, have been proposed, critical of solution degeneracy still exists some possible or spaces are discarded unreachable during process. Here, we report to employing conditional generative...

A versatile electrochemical system for the non-aqueous electrodeposition of crystalline, oxide free p-block metals and metalloids is described, it demonstrated that by combining mixtures these reagents, this suitable binary semiconductor alloys. The tetrabutylammonium halometallates, [NnBu4][InCl4], [NnBu4][SbCl4], [NnBu4][BiCl4], [NnBu4]2[SeCl6] [NnBu4]2[TeCl6], are readily dissolved in CH2Cl2 form reproducible systems with good stability presence a [NnBu4]Cl supporting electrolyte....

A series of alkylchalcogenostibines have been synthesised and employed as precursors for the chemical vapour deposition Sb₂Te₃ Sb₂Se₃. Variations in substrate temperature give different film morphologies, patterned arrays can be deposited using selectivity.

This work experimentally implements a physical reservoir computing system using highly ordered, 3D-structured mesoporous silica (mSiO 2 ) thin film based memristor to achieve pattern recognition with high accuracy.

Abstract We herein report the results of a facile two-step surfactant assisted reflux synthesis bismuth telluride (Bi 2 Te 3 ) nanowires (NWs). The as-synthesised NWs had diameters ranging from 70 to 110 nm with length varying between 0.4 and µ m preferential lattice orientation (0 1 5) as determined by grazing incidence x-ray diffraction. demonstrate for first time that solvent/binder paste formulation N -methyl-2-pyrrolidone/polyvinylidene fluoride (PVDF) is suitable screen-printing Bi...

In response to the growing need for efficient processing of temporal information, neuromorphic computing systems are placing increased emphasis on switching dynamics memristors. While can be regulated by properties input signals, ability controlling it via electrolyte a memristor is essential further enrich states and improve data capability. This study presents synthesis mesoporous silica (mSiO2) films using sol–gel process, which enables creation with controllable porosities. These serve...

Abstract Integrating resistive memory or neuromorphic memristors into mainstream silicon technology can be substantially facilitated if the memories are built in back-end-of-line (BEOL) and stacked directly above logic circuitries. Here we report a promising memristor employing plasma-enhanced chemical vapour deposition (PECVD) bilayer of amorphous SiC/Si as device layer Cu an active electrode. Its endurance exceeds one billion cycles with ON/OFF ratio ca. two orders magnitude. Resistance...

The neutral complexes [GaCl3(EnBu2)] (E = Se or Te), [(GaCl3)2{nBuE(CH2)nEnBu}] Se, n 2; E Te, 3), and [(GaCl3)2{tBuTe(CH2)3TetBu}] are conveniently prepared by reaction of GaCl3 with the EnBu2 in a 1:1 ratio nBuE(CH2)nEnBu tBuTe(CH2)3TetBu 2:1 characterized IR/Raman multinuclear (1H, 71Ga, 77Se{1H}, 125Te{1H}) NMR spectroscopy, respectively, all which indicate distorted tetrahedral coordination at Ga. tribromide analog, [GaBr3(SenBu2)], was similarly. A crystal structure determination on...

A controllable transformation from interfacial to filamentary switching mode is presented on a ZrO2/ZrO2 − x /ZrO2 tri-layer resistive memory. The two modes are investigated with possible and mechanisms proposed. Resistivity modulation of the ZrO2 layer proposed be responsible for in through injecting/retracting oxygen ions. compliance-free due intrinsic series resistor by filaments formed layers. By tuning RESET voltages, stable multistate memory can achieved which clearly points towards...

We report the thermoelectric properties of Bi2Te3 thin films electrodeposited from weakly coordinating solvent dichloromethane (CH2Cl2). It was found that oxidation porous is significant, causing degradation its properties. show morphology film can be improved drastically by applying a short initial nucleation pulse, which generates large number nuclei, and then growing nuclei pulsed electrodeposition at much lower overpotential. This significantly reduces as smooth have smaller...

In this paper we report the use of Na3[SbS4].9H2O as a single source precursor for electrodeposition Sb2S3 from aqueous electrolyte at pH 9.1. We present electrochemistry [SbS4]3− anion and redox processes observed deposited film. show that an amorphous film can be by anodic onto glassy carbon by-product accompanies deposition avoided using suitable pulse plating approach. Raman spectroscopy grazing incidence X-ray diffraction were used to characterise deposits good quality crystalline films...

Optical Solar Reflectors (OSRs) combine low solar radiation absorption (α) and high broadband infrared emissivity (ε) are applied to the external surface of spacecraft for its thermal management. Bulk glass OSR tiles incumbent, but ultra-lightweight thin-film flexible coatings raising considerable interest both space terrestrial radiative cooling applications. In this work, a genetic algorithm combined with transfer matrix method is used design optimization multimaterial OSRs cooling. The...

This work experimentally implements a physical reservoir computing system using back-end-of-line SiC thin film based memristor to achieve pattern recognition with high accuracy.

A one-step, scalable, reproducible, low-temperature, and in situ solvothermal deposition method has been established for the growth of Sb 2 S 3 on FTO using [Sb{S P{O(Pr) } ] precursor. The Ag/Sb /FTO device demonstrated low operating voltage excellent resistive switching characteristics.

Deposition and repeated phase cycling of device-quality nano-cells GST-225.