A5021192845- Conducting polymers and applications
- Perovskite Materials and Applications
- Organic Electronics and Photovoltaics
- 2D Materials and Applications
- Quantum Dots Synthesis And Properties
- Advanced Memory and Neural Computing
- Molecular Junctions and Nanostructures
- Quantum and electron transport phenomena
- Advanced Thermoelectric Materials and Devices
- Organic Light-Emitting Diodes Research
- Nanowire Synthesis and Applications
- Advanced Sensor and Energy Harvesting Materials
- Solid-state spectroscopy and crystallography
- MXene and MAX Phase Materials
- Electronic and Structural Properties of Oxides
- Advanced NMR Techniques and Applications
- Graphene research and applications
- Thin-Film Transistor Technologies
- Semiconductor materials and devices
- Chalcogenide Semiconductor Thin Films
- Nanomaterials and Printing Technologies
- Magnetic properties of thin films
- Ga2O3 and related materials
- Gas Sensing Nanomaterials and Sensors
- Transition Metal Oxide Nanomaterials
Seoul National University
2017-2025
Yonsei University
2016-2022
Nankai University
2020
University of Cambridge
2014-2019
Abstract Thermoelectric (TE) generation with solution‐processable conducting polymers offers substantial potential in low‐temperature energy harvesting based on high tunability materials, processes, and form‐factors. However, manipulating the TE charge transport properties accompanies structural energetic disorders, restricting enhancement of thermoelectric power factor ( PF ). Here, solution‐based strong acid–base treatment techniques are introduced to modulate doping level...
Resistive random access memories can potentially open a niche area in memory technology applications by combining the advantages of long endurance dynamic random-access and retention time flash memories. Recently, resistive devices based on organo-metal halide perovskite materials have demonstrated outstanding properties, such as low-voltage operation high ON/OFF ratio; properties are essential requirements for low power consumption developing practical devices. In this study, nonhalide lead...
Efficient doping for modulating electrical properties of two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductors is essential meeting the versatile requirements future electronic and optoelectronic devices. Because semiconductors, including TMDCs, typically involves generation charged dopants that hinder charge transport, tackling Coulomb scattering induced by externally introduced remains a key challenge in achieving ultrahigh mobility 2D semiconductor systems. In this...
Embedding metal-halide perovskite particles within an insulating host matrix has proven to be effective strategy for revealing the outstanding luminescence properties of perovskites as emerging class light emitters. Particularly, unexpected bright green emission observed in a nominally pure zero-dimensional cesium-lead-bromide (Cs4PbBr6) triggered intensive research better understanding serendipitous incorporation emissive guest species Cs4PbBr6 host. However, limited controllability over...
Abstract Conducting polymers are of interest for a broad range applications from bioelectronics to thermoelectrics. The factors that govern their complex charge transport physics include the structural disorder present in these highly doped polymer films and Coulombic interactions between electronic carriers dopant counterions. Previous studies have shown at low doping levels strongly trapped vicinity counterions, while high is not limited by trapping, which manifests itself conductivity...
Abstract Organic semiconductors (OSCs) have been widely studied due to their merits such as mechanical flexibility, solution processability, and large‐area fabrication. However, OSC devices still overcome contact resistance issues for better performances. Because of the Schottky at metal–OSC interfaces, a non‐ideal transfer curve feature often appears in low‐drain voltage region. To improve properties OSCs, there several methods reported, including interface treatment by self‐assembled...
Abstract Although 2D molybdenum disulfide (MoS 2 ) has gained much attention due to its unique electrical and optical properties, the limited contact semiconductors still impedes realization of high‐performance MoS ‐based devices. In this regard, many studies have been conducted improve carrier‐injection properties by inserting functional paths, such as graphene or hexagonal boron nitride, between electrodes semiconductors. The reported strategies, however, require relatively time‐consuming...
In the past decade, intensive studies on monolayer MoS2-based phototransistors have been carried out to achieve further enhanced optoelectronic characteristics. However, intrinsic characteristics of MoS2 still not explored until now because unintended interferences, such as multiple reflections incident light originating from commonly used opaque substrates. This leads overestimated photoresponsive inevitably due photogating and photoconductive effects. Here, we reveal MoS2, including its...
Application of two-dimensional (2D) organic–inorganic hybrid halide perovskites in optoelectronic devices requires a detailed understanding the local structural features including Pb–I bonding 2D layers and interaction between organic spacer molecules perovskite layer. In this study, we show that 1H 207Pb solid-state nuclear magnetic resonance (NMR) spectroscopy can serve as noninvasive complementary technique to probe Ruddlesden–Popper phase BA2MAn–1PbnI3n+1 (n = 1–4) with butylammonium...
Recently, there have been numerous studies on utilizing surface treatments or photosensitizing layers to improve photodetectors based 2D materials. Meanwhile, avalanche breakdown phenomenon has provided an ultimate high-gain route toward photodetection in the form of single-photon detectors. Here, authors report ultrasensitive phototransistors monolayer MoS2 synthesized by chemical vapor deposition. A lower critical field for electrical under illumination shows strong evidence initiated...
While two-dimensional transition metal dichalcogenides (TMDCs)-based photodetectors offer prospects for high integration density and flexibility, their thinness poses a challenge regarding low light absorption, impacting photodetection sensitivity. Although the of TMDCs with halide perovskite nanocrystals (PNCs) has been known to be promising absorption coefficient PNCs, charge mobility PNCs delays efficient photocarrier injection into TMDCs. In this study, we integrated MoS2 in situ formed...
Abstract In organic device applications, a high contact resistance between metal electrodes and semiconductors prevents an efficient charge injection extraction, which fundamentally limits the performance. Recently, various doping methods have been reported as effective way to resolve problem. However, has not explored extensively in field effect transistors (OFETs) due dopant diffusion problem, significantly degrades stability by damaging ON/OFF switching Here, of method is improved...
Abstract The controllability of carrier density and major type transition metal dichalcogenides(TMDCs) is critical for electronic optoelectronic device applications. To utilize doping in TMDC devices, it important to understand the role dopants charge transport properties TMDCs. Here, effects molecular on tungsten diselenide (WSe 2 ) are investigated using three p‐type dopants, 2,3,5,6‐tetrafluoro‐7,7,8,8‐tetracyanoquinodimethane (F 4 ‐TCNQ), tris(4‐bromophenyl)ammoniumyl...
Abstract Molecular doping of organic semiconductors has been widely utilized to modulate the charge transport characteristics and carrier concentration active materials for electronics such as photovoltaics, light-emitting diodes, field-effect transistors. For application molecular electronics, fundamentals should be thoroughly understood in terms mechanism, host dopant materials, methodologies, post-doping properties doping-induced structural/energetic disorder stability. In this report,...
Tin (Sn) halide perovskites are promising materials for various electronic applications due to their favorable properties. However, facile interaction with atmospheric oxygen (O2) often hinders the practical use of Sn-based perovskites, which is regarded as a major cause undesired variations in electrical and structural Herein, we report reversible p-doping phenethylammonium tin iodide ((PEA)2SnI4) transistors when they exposed sequentially ambient vacuum conditions. Exposure conditions...
Abstract Organic resistive memory devices are one of the promising next‐generation data storage technologies which can potentially enable low‐cost printable and flexible devices. Despite a substantial development field, mechanism switching phenomenon in organic has not been clearly understood. Here, time–dependent current behavior unipolar under constant voltage stress to investigate turn‐on process is studied. The discovered occur probabilistically through series abrupt increases current,...