A5068133913- Semiconductor materials and devices
- Perovskite Materials and Applications
- Quantum Dots Synthesis And Properties
- Electronic and Structural Properties of Oxides
- Catalytic Processes in Materials Science
- Chalcogenide Semiconductor Thin Films
- ZnO doping and properties
- Ga2O3 and related materials
- X-ray Diffraction in Crystallography
- Pigment Synthesis and Properties
- Nanowire Synthesis and Applications
- 2D Materials and Applications
- Copper-based nanomaterials and applications
- Advanced Memory and Neural Computing
- Mesoporous Materials and Catalysis
- Metal and Thin Film Mechanics
- Analytical Chemistry and Sensors
- Advanced Photocatalysis Techniques
- Plasma Applications and Diagnostics
- Copper Interconnects and Reliability
- Phase-change materials and chalcogenides
- Iron oxide chemistry and applications
- Metallic Glasses and Amorphous Alloys
- Thermal and Kinetic Analysis
- History and Theory of Mathematics
University of Helsinki
2015-2025
Saint Petersburg State Electrotechnical University
2016
Argonne National Laboratory
2006
Atomic layer deposition (ALD), a gas-phase thin film technique based on repeated, self-terminating gas–solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing conformal inorganic material layers various applications. ALD been discovered developed independently, at least twice, under different names: atomic epitaxy (ALE) molecular layering. ALE, dating back to 1974 Finland, commonly known as origin ALD, while work done...
Semiconducting two-dimensional (2D) materials are studied intensively because of their promising performance in diverse applications from electronics to energy storage and catalysis. Recently, HfS2 ZrS2 have emerged as potential rivals for the commonly 2D semiconductors such MoS2 WSe2, but use is hindered by difficulty producing continuous films. Herein, we report first atomic layer deposition (ALD) processes using HfCl4 ZrCl4 with H2S precursors. We demonstrate uniform films on a range...
Atomic layer deposition (ALD) enables the of numerous materials in thin film form, yet there are no ALD processes for metal iodides. Herein, we demonstrate an process PbI2, a iodide with two-dimensional (2D) structure that has applications areas such as photodetection and photovoltaics. This uses lead silylamide Pb(btsa)2 SnI4 precursors works at temperatures below 90 °C, on variety starting surfaces substrates polymers, metals, sulfides, oxides. The surface defines crystalline texture...
Herein, we report an atomic layer deposition (ALD) process for Cu2O thin films using copper(II) acetate [Cu(OAc)2] and water vapor as precursors. This precursor combination enables the of phase-pure, polycrystalline, impurity-free at temperatures 180-220 °C. The Cu(I) oxide from a Cu(II) without use reducing agent is explained by thermally induced reduction Cu(OAc)2 to volatile copper(I) acetate, CuOAc. In addition optimization ALD parameters characterization film properties, studied in...
Hybrid halide perovskite thin films are applicable in a wide range of devices such as light-emitting diodes, solar cells, and photodetectors. The optoelectronic properties perovskites together with their simple inexpensive film deposition methods make these materials viable alternative to established devices. However, the potential is compromised by limitations existing methods, which suffer from trade-off among suitability for large-scale industrial production batch or roll-to-roll manner,...
Atomic layer deposition (ALD) is a viable method for depositing functional, passivating, and encapsulating layers on top of halide perovskites. Studies in that area have only focused metal oxides, despite great number materials can be made with ALD. This work demonstrates that, addition to other ALD processes compatible the We describe two new lead sulfide. These operate at low temperatures (45–155 °C) been inaccessible previous PbS processes. Our rely volatile reactive precursors Pb(dbda)...
In this review, we highlight new atomic layer deposition (ALD) precursors and process chemistries based on the ALD database found in atomiclimits.com. The aim was to compare processes before after 2010 see possible changes. motivations for development trends types of different metal are discussed. total number published thermal is 1711, which more than half (942) were 2010. materials deposited by 539, 312 these, most popular material group binary oxides. After 2010, share nonoxide ternary...
Hematite (Fe2O3) is a promising visible-light-active semiconductor material for photoelectrocatalytic applications; however, it has yet to achieve its theoretical maximum efficiency. Researchers globally are making significant efforts enhance performance and surpass the current efficiency limitations. Here, we report of Ti x Fe2-x O3 films deposited by atomic layer deposition (ALD) using FeCp2 Ti(OMe)4 as precursors. The response surface methodology (RSM) with face-centered central composite...
Copper(II) oxide thin films were grown by atomic layer deposition (ALD) using bis-(dimethylamino-2-propoxide)copper [Cu(dmap)2] and ozone in a temperature window of 80–140 °C. A thorough characterization the was performed x-ray diffraction, reflectivity, UV-Vis spectrophotometry, force microscopy, field emission scanning electron photoelectron spectroscopy, time-of-flight elastic recoil detection analysis techniques. The process found to produce polycrystalline copper(II) with growth rate...
Abstract The development of deposition processes for metal carbide thin films is rapidly advancing, driven by their potential applications including catalysis, batteries, and semiconductor devices. Within this landscape, atomic layer (ALD) offers exceptional conformality, uniformity, thickness control on spatially complex structures. This paper presents a comprehensive study the thermal ALD MoC x with MoCl 5 1,4‐bis(trimethylgermyl)‐1,4‐dihydropyrazine [(Me 3 Ge) 2 DHP] as precursors,...
Van der Waals epitaxy holds great promise in producing high-quality films of 2D materials. However, scalable van processes operating at low temperatures and vacuum conditions are lacking. Herein, atomic layer deposition is used for continuous multilayer materials HfS2, MoS2, SnS2, ZrS2 on muscovite mica PbI2 sapphire between 75 °C 400 °C. For the metal sulfides mica, main epitaxial relation MS2 || mica. Some domains rotated by 30° also observed corresponding to alignment. In both cases,...
Abstract Copper iodide (CuI) is a high‐performance p‐type transparent semiconductor that can be used in numerous applications, such as transistors, diodes, and solar cells. However, the lack of conformal scalable methods to deposit CuI thin films limits its establishment applications involve complex‐shaped and/or large substrate areas. In this work, atomic layer deposition (ALD) employed enable film deposition. A two‐step approach relying on ALD CuO subsequent conversion via exposure HI...
In this work, we developed a new ALD process for nickel metal from dichlorobis(triethylphosphine)nickel(II) (NiCl2(PEt3)2) and 1,4-bis(trimethylgermyl)-1,4-dihydropyrazine ((Me3Ge)2DHP). A series of phosphine adducts cobalt halides were synthesized characterized their volatility thermal stability. Also (Me3Ge)2DHP is novel reducing agent in ALD. Smooth films deposited on different substrate materials at 110 °C, which the lowest deposition temperature Ni found literature. The growth rate 0.2...
Cesium iodide (CsI) is a well-established scintillator material that also serves as precursor for all-inorganic halide perovskite solar absorbers, such CsPbI3. However, the lack of conformal and scalable methods to deposit thin films remains major challenge on their way commercialization. In this work, we employ atomic layer deposition (ALD) key method due its inherent scalability large areas complex-shaped surfaces. We demonstrate two new ALD processes CsI CsPbI3 films. The process relies...
Because of its high conductivity and intrinsic stability, poly(3,4-ethylenedioxythiophene (PEDOT) has gained great attention both in academic research industry over the years. In this study, we used oxidative molecular layer deposition (oMLD) technique to deposit PEDOT from 3,4-ethylenedioxythiophene (EDOT) a new inorganic oxidizing agent, rhenium pentachloride (ReCl5). We extensively characterized properties films by scanning electron microscopy, X-ray diffraction, photoelectron...
Area-selective etching (ASE) of polymers is a new, inventive, and simple self-aligned patterning technique which has the potential to become an important method for fabrication semiconductor devices. A polymer film etched by using etchant gases, diffuse through are activated catalytic materials underneath polymer. The decomposed locally on top catalytically active materials, while inactive stays intact. This makes process area-selective self-aligned, avoids edge placement errors other...
Halide perovskites, such as CsSnI3, are materials renowned for their exceptional optoelectronic properties. CsSnI3 stands out a desirable choice nontoxic and environmentally friendly absorber layers in perovskite solar cells (PSC) due to the absence of lead its composition. However, limited ability deposit conformal scalable halide thin films remains significant obstacle wide commercialization PSCs. In this study, we use atomic layer deposition (ALD) tackle obstacle. We present two new ALD...
Hematite (Fe2O3) is a promising visible-light-active semiconductor material for photoelectrocatalytic applications; however, it has yet to achieve its theoretical maximum efficiency. Researchers globally are making significant efforts enhance performance and surpass the current efficiency limitations. Here we report of TixFe2-xO3 films deposited by atomic layer deposition (ALD) using FeCp2 Ti(OMe)4 as precursors. Response Surface Methodology (RSM) with face-centered central composite design...
Hematite (Fe2O3) is a promising visible-light-active semiconductor material for photoelectrocatalytic applications; however, it has yet to achieve its theoretical maximum efficiency. Researchers globally are making significant efforts enhance performance and surpass the current efficiency limitations. Here we report of TixFe2-xO3 films deposited by atomic layer deposition (ALD) using FeCp2 Ti(OMe)4 as precursors. Response Surface Methodology (RSM) with face-centered central composite design...
Atomic layer deposition offers outstanding film uniformity and conformality on substrates with high aspect ratio features. These qualities are essential for mixed-halide perovskite films applied in tandem solar cells, transistors light-emitting diodes. The optical electronic properties of perovskites can be adjusted by adjusting the ratios different halides. So far ALD is only capable depositing iodine-based halide whereas other processes lacking. We describe six new low temperature (≤100...
Summary form only given. Two types of RF atmospheric plasma systems were used for deposition nanostructures on polymer substrates. Both consist the quartz tubes equipped by antennas at frequencies 13.56 MHz and/or 27.12 and a Laval nozzle end. The provides simultaneously nucleation nanoparticles in fly, accelerates them direction substrate keeps nanoparticle flow outlet cold enough to protect from thermal damages. have two-stage design where first stage serves as generator droplets melted...