A5000222202- Electronic Packaging and Soldering Technologies
- 3D IC and TSV technologies
- Additive Manufacturing and 3D Printing Technologies
- Electromagnetic Compatibility and Noise Suppression
- Nanofabrication and Lithography Techniques
- Semiconductor Lasers and Optical Devices
- Copper Interconnects and Reliability
- Aluminum Alloys Composites Properties
- Integrated Circuits and Semiconductor Failure Analysis
- Photonic and Optical Devices
- Semiconductor materials and devices
- Material Properties and Processing
- Metal Forming Simulation Techniques
- Advanced Welding Techniques Analysis
- Advanced Surface Polishing Techniques
- VLSI and FPGA Design Techniques
- VLSI and Analog Circuit Testing
- Advanced MEMS and NEMS Technologies
- Composite Structure Analysis and Optimization
- Engineering Applied Research
- Adhesion, Friction, and Surface Interactions
- Aluminum Alloy Microstructure Properties
- Advancements in Photolithography Techniques
- Mechanical Behavior of Composites
- Metallurgy and Material Forming
Micron Corporation (United States)
2021-2025
Nanya Technology (Taiwan)
2020-2024
Palo Alto Institute
2021
East Asia School of Theology
2021
ASM Pacific Technology (China)
2014-2019
Singapore Science Park
2008-2017
ASM International
2015-2017
Industrial Technology Research Institute
2010-2014
ITRI International
2010-2014
Institute of Microelectronics
2007-2013
Purpose The purpose of this paper is to focus on through‐silicon via (TSV), with a new concept that every chip or interposer could have two surfaces circuits. Emphasis placed the 3D IC integration, especially (both active and passive) technologies their roadmaps. origin integration also briefly presented. Design/methodology/approach This design addresses electronic packaging passive TSV for high‐power, high‐performance, high pin‐count, ultra fine‐pitch, small real‐estate, low‐cost...
In this study, advanced packaging is defined. The kinds of are ranked based on their interconnect density and electrical performance, grouped into 2-D, 2.1-D, 2.3-D, 2.5-D, 3-D IC integration, which will be presented discussed. Chiplet design heterogeneous integration provide alternatives to the system chips (especially for nodes) Different substrates, such as size, pin-count, metal linewidth spacing packaging, examined. lateral communication between chiplets, silicon bridges embedded in...
Most TSVs are filled with copper; siliconpoly and tungsten the alternatives. The coefficient of thermal expansion (CTE) copper (~17.5 times 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-6</sup> /degC) is a few higher than that silicon (~2.5 times10 /degC). Thus, when through via (TSV) subjected to temperature loadings, there very large local mismatch between silicon/dielectric (e.g., SiO <sub...
3D integration consists of IC packaging, integration, and Si integration. They are different in general the TSV (through-silicon via) separates packaging from IC/Si integrations since latter two use but does not. (with a new concept that every chip or interposer could have surfaces with circuits) is heart focus this investigation. The origin presented. Also, evolution, challenges, outlook discussed as well their road maps Finally, few generic, low-cost, thermal-enhanced system-in-packages...
Thermal performances of 3D stacked TSV (through silicon via) chips filled with copper are investigated based on heat-transfer CFD (computational fluid dynamic) analyses. Emphases placed the determination (1) empirical equations for equivalent thermal conductive various copper-filled diameters, pitches, and aspect ratios, (2) junction temperature resistance stacking up to 8 chips, (3) effect thickness chip its hot spot temperature. Useful design charts guidelines provided engineering practice...
3D integration consists of IC packaging, integration, and Si integration. They are different in general, the TSV (through-silicon-via) separates packaging IC/Si integrations, i.e., latter two use TSV, but does not. for is >26 years old technology, which (with a new concept that every chip could have active surfaces) focus this study. Emphasis placed on manufacturing yield hidden costs. A roadmap also provided.
Recent advances in flip chip technology such as wafer bumping, package substrate, assembly, and underfill will be presented this study. Emphasis is placed on the latest developments of these areas past few years. Their future trends also recommended.
In this paper, the warpage and thermal performances of fan-out wafer-level packaging (FOWLP) are investigated. Emphasis is placed on characterization effects FOWLP important parameters, such as chip size, thickness, package/chip area ratio, epoxy molding compound (EMC), EMC cap, reconstituted carrier material die-attach film, after postmold cure backgrinding EMC. The simulation results compared to experimental measurements. Also, performance (junction-to-ambient resistance) with various...
The recent advances and trends in fan-out wafer/panel-level packaging (FOW/PLP) are presented this study. Emphasis is placed on: (A) the package formations such as (a) chip first die face-up, (b) face-down, (c) last or redistribution layer (RDL)-first; (B) RDL fabrications organic RDLs, inorganic hybrid (d) laser direct imaging (LDI)/printed circuit board (PCB) Cu platting etching RDLs; (C) warpage; (D) thermal performance; (E) temporary wafer versus panel carriers; (F) reliability of...
In this study, the recent advances and trends in Cu–Cu hybrid bonding will be investigated. Emphasis is placed on definition, kinds, advantages disadvantages, challenges (opportunities), examples of bumpless bonding. Also, some recommendations provided.
In this study, the recent advances and trends in multiple system heterogeneous integration with through-silicon via (TSV) interposers will be investigated. Emphasis is placed on definition, kinds, advantages disadvantages, challenges (opportunities), examples of TSV interposer. Also, some recommendations provided.
Three dimensional system-in-package (3D SiP) based on silicon carriers or interposer is a fast emerging technology that offers system design flexibility and integration of heterogeneous technologies. One the key technologies enabler for carrier through via (TSV). The development 3D SiP will require devices with different functionality operating at high frequency to be densely packed substrate. However, substrate usually low resistivity, when signal transmitted vertically via, significant...
Portable electronic products demand multifunctional module comprising of digital, radio frequency and memory functions. Through silicon via (TSV) technology provides a means implementing complex, integration with higher packing density for system in package. A 3-D TSV has been developed this paper. Thermo-mechanical analysis performed interconnect design is optimized. Multiple chips representing different functional circuits are assembled using wirebond flip chip interconnection methods....
Because of Moore's (scaling/integration) law, the Cu/low-k silicon chip is getting bigger, pin-out higher, and pitch finer. Thus, conventional organic buildup substrates cannot support these kinds chips anymore. To address needs, Si interposer with TSV has emerged as a good solution to provide high wiring density interconnection, minimize CTE mismatch that vulnerable thermal-mechanical stress, improve electrical performance due shorter interconnection from substrate. This paper presents...