A5040375397- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Silicon Nanostructures and Photoluminescence
- solar cell performance optimization
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Surface Polishing Techniques
- Semiconductor materials and devices
- Solidification and crystal growth phenomena
- ZnO doping and properties
- Perovskite Materials and Applications
- Advanced Thermoelectric Materials and Devices
- Diamond and Carbon-based Materials Research
- Chalcogenide Semiconductor Thin Films
- Copper-based nanomaterials and applications
- Laser-Ablation Synthesis of Nanoparticles
- Advancements in Semiconductor Devices and Circuit Design
- Leptospirosis research and findings
- Advanced Software Engineering Methodologies
- Photovoltaic System Optimization Techniques
- Quantum Dots Synthesis And Properties
- Solar-Powered Water Purification Methods
- Solar Radiation and Photovoltaics
- Maternal and Neonatal Healthcare
- Clay minerals and soil interactions
Instituto Dom Luiz
2022-2024
University of Lisbon
2011-2024
Norwegian University of Science and Technology
2014-2022
University of Aveiro
2018-2020
Universidade Nova de Lisboa
2018-2019
Complejo Hospitalario Universitario de Santiago
2019
University of Glasgow
2018
Instituto de Engenharia de Sistemas e Computadores Investigação e Desenvolvimento
2012
Developments in thermoelectric (TE) transparent p-type materials are scarce and do not follow the trend of corresponding n-type - a limitation current devices. P-type thin films CuI have been developed by three different methods order to maximise optical transparency (>70% visible range), electrical (σ = 1.1 × 104 Sm-1) properties (ZT 0.22 at 300 K). These applied first planar fully p-n type TE modules where gallium-doped zinc oxide (GZO) were used as element indium (ITO) electrodes. A...
A scalable laser scribing approach to produce zinc oxide (ZnO) decorated laser-induced graphene (LIG) in a unique laser-processing step was developed by irradiating polyimide sheet covered with Zn/ZnO precursor CO2 (10.6 μm) under ambient conditions. The parameters revealed strong impact on the surface morphology of formed LIG, ZnO microparticles' formation and distribution, as well physical properties fashioned composites. microparticles were seen be randomly distributed along LIG surface,...
We present here a thorough study of one-step metal-assisted chemical etching (MACE) method to reduce the reflectivity monocrystalline silicon (mono c-Si) wafers, thus increasing their light capture efficiency. The uses hydrogen peroxide (H2O2) and hydrofluoric acid (HF) as etchants silver (Ag) reaction catalyst. In this study, we inspected impact etchant molar ratio (ρ = [HF]/(HF + H2O2]) in dynamics properties etched wafers. For each texturing solution used time was swept, characterizing...
Parking a solar electric car in the sunshine will help charge its battery, increasing driving range. On other hand, it also raise indoor temperature, leading to need switch on air conditioning make comfortable when driving, load and reducing vehicle Thus, one may wonder if solar-extended range is somehow reduced or even eliminated by demand due conditioning. To address this "parking dilemma", we have characterized thermal properties of passenger for typical summer conditions moderate...
Undoped and manganese doped zinc sulfide nanoparticles were produced by a fast, one-step two-component microwave-assisted synthesis method. The solid phase retains around 78% of the initial Mn concentration, as revealed Particle Induced X-ray Emission analysis. diffraction patterns confirmed blende structure in transmission electron microscopy images, with triangular prism cube shapes observed, respectively an average particle size 7 nm 13 nm. Dried powders nanoparticles, 0.1 mol% 0.7 ions,...
The SLIM-cut technique provides a way to obtain thin silicon foils without standard sawing step, thus avoiding kerf losses. This process consists of three steps: depositing stress-inducing layer on top the surface; stress activation by heating and cooling, resulting in crack propagation detachment layer; chemical cleaning remove layer. paper describes new method using Ag/Al epoxy layers. is controlled along sample length order avoid unwanted additional formation interaction with other...
In highly porous carbon electrodes, a large fraction of pores can be inaccessible to the electrolyte, which translates into lower specific capacitances. This is accentuated at high current densities. To circumvent this, channels opened enhance ionic diffusion. this work, were created using pulsed laser. Nine sets laser-scribing parameters (pulse fluence and spot spacing) applied on two carbon-based supercapacitor electrodes: K-bar hand-coated electrodes ("K") screen-printed ("SP")....
Abstract This study aims at better understanding the generation of dislocations causing a structure loss issue during pulling Czochralski silicon ingots. Several industrial‐scale n‐type ingots containing this were characterized. The and propagation observed in each ingot along with an investigation perturbation origin loss. results show that for two characterized study, particles entering contact edge crystal growth are responsible dislocations. Moreover, was compared different origins:...
The impact of copper (Cu) contamination on the minority carrier lifetime degradation last solidified fraction ann-type Czochralski (CZ) silicon ingot was investigated. Lifetime more than 50% measured at top an as-cut block during first 2000 h (∼83 days). Depth profiles Cu concentration were collected over a depth 20 μm from surface and exponential decrease with observed. critical for precipitation exceeded within 2 μm. mechanism diffusion towards room temperature is suggested phenomenon...
Abstract In this work, eco-friendly magnesium-silicide (Mg 2 Si) semiconducting ( n -type) thermoelectric pastes for building components concerning energy-harvesting devices through 3D printing, spray and electrospinning were synthetized tested the first time. The Mg Si fine powders obtained combination of ball milling thermal annealing under Ar atmosphere. While latter process was crucial obtaining desired phase, indispensable homogenizing reducing grain size powders. exhibited a large...
Purpose This paper aims to provide an analysis of the MoRe2010 specification while identifying best practices and techniques requirements engineering's (RE) body knowledge that could be applied improve quality this specification. Design/methodology/approach Considering scope MoReq, authors describe most relevant related RE common practices. Next, they evaluate potential impact applying these MoReq2010. Findings Bearing in mind MoReq2010 is embodied as a textual document, discusses how...
Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation G. Gaspar, F. Reis, L. Pina, Sorasio, J. Wemans, M. C. Brito; Exploring One‐Axis Tracking Configurations For CPV Application. AIP Conf. Proc. 1 December 2011; 1407 (1): 285–288. https://doi.org/10.1063/1.3658345 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote...
A new method for molten zone crystallization is presented. The based on the formation of a capillary by applying an electric current. Since power delivered directly to liquid, technique has potential low energy budget. On other hand, being floating method, liquid silicon never contacts foreign materials and therefore essentially contamination free. Experimental results show that crystallized samples feature relatively minority carrier lifetimes which are correlated high dislocation...
:For the first time, impact of tail detachment on quality last solid fraction a Czochralski silicon ingot body is reported. Simulations thermal history were performed CGSim software and showed that producing an with detached from melt before cone-end (the so called "popped-out" tail) changes time part remains at 900-1200°C temperature range could thus growth defects such as oxygen precipitates. In addition, ingots tails completely grown characterized compared to popped-out tails. Lifetime...
The junctionless MOSFET (JLFET) architecture has attracted much attention as an enabling technology for ultra-scaled CMOS devices [1]. dominant scattering mechanism in JLFETs is impurity due to its necessarily highly doped channel Accordingly, III-V's may offer even greater advantage the material than conventional MOSFETs they suffer less from mobility degradation [2]. Current Si employ non-planar architectures with high aspect ratio fins which serve increase on current (Ion) per chip...