A5000097616- Quantum Dots Synthesis And Properties
- Chalcogenide Semiconductor Thin Films
- Semiconductor materials and interfaces
- Gas Sensing Nanomaterials and Sensors
- Economic and Technological Innovation
- Optical properties and cooling technologies in crystalline materials
- Advanced Semiconductor Detectors and Materials
- ZnO doping and properties
- Ion-surface interactions and analysis
- Ga2O3 and related materials
- Copper-based nanomaterials and applications
National Academy of Sciences of Armenia
2003-2025
Institute of Radiophysics and Electronics
2003-2025
For the first time, thin-film CIGS solar cells have been fabricated by co-evaporation on specially developed non-conducting perlite (an aluminum potassium sodium silicate natural mineral of volcanic origin) glass-ceramic substrates to develop a fully integrated photovoltaic and building element. Such material can meet physical requirements as well cost goals. The preliminary data presented show that deposited ceramic exhibit efficiency higher than 10%.
Auger capture of majority carriers by a charged edge dislocation in n-type semiconductors is considered the case weak saturation dangling bonds existing on core. The dependence radius depth one-dimensional band and temperature obtained. Values free electron concentration are estimated when dominant mechanism nonradiative recombination crystals with dislocations.
We present the results of study microstructure, X-ray diffraction and Raman scattering spectra Cu2SnS3 (CTS) films synthesized at 500 o C by sulfurization SnCu stacked metal precursors with different annealing time. The indicate that time has a great influence on both composition morphology film. It is shown process formation single-phase CTS compound monoclinic structure close to stoichiometry completed for synthesis 60 - 80 min. With an increase in 120 min, preservation structural...