By introducing small amounts of fluorine into the gate oxide, we have been able to significantly alter radiation response Metal/SiO2/Si (MOS) capacitors, and their subsequent time dependent behavior. Experimentally observed that compared with control which no introduced fluorinated samples exhibit following major differences: (1) densities radiation-induced oxide charge interface traps are drastically reduced, (2) gate-size dependence is greatly suppressed, (3) overall density continues...

We performed electric arc discharges in pure Si to generate luminous balls with lifetime the order of seconds and several properties usually reported for natural ball lightning. This simple experiment does not rely on energy sources excitation mechanisms that are improbable phenomenon clearly demonstrates role vaporization oxidation Si, as proposed by Abrahamson-Dinniss theory ball-lightning formation.

Two distinct peaks in the interface trap distribution on (100) Si, one above and other below Si midgap energy, have been observed a wide selection of metal/SiO2/Si capacitors after they are exposed to ionizing radiation. The samples tested cover range gate electrode materials (Al, polycrystalline Mo, TiSi2) oxidation environments [dry O2, steam, dry O2+TCA (trichloroethane), O2+HCl at various temperatures]. Among all tested, peak (∼Ev+0.75 eV) appeared immediately irradiation, for most...

We have made a comparison between the interface traps generated in metal/SiO2/Si structure by x-ray ionizing radiation and Fowler–Nordheim hot-electron injection, found very strong similarities two. More specifically, qualitative features of energy distribution traps, their post-damage time-dependence behavior, dependence on gate bias while being damaged are all much alike, supporting notion that same types interfacial defects two different processes.

The radiation induced interface traps in Moly-gate Metal/SiO2/Si (MOS) capacitors over a wide range of doses have been investigated. gate oxides these samples were thermally grown dry O2+ Trichloroethane (TCA). It has found that: (1) high temperature (900°C) annealing H2 after Mo deposition increases the sensitivity significantly, especially for dose levels above 1 Mrad(Si); (2) substantial size dependence is observed without hydrogen anneal, but not annealed hydrogen; (3) characteristic...

Transition-metal (TM)-doped diluted magnetic oxides (DMOs) have attracted attention from both experimental and theoretical points of view due to their potential use in spintronics towards new nanostructured devices technologies. In the present work, we study properties Sn0.96TM0.04O2 Sn0.96TM0.04O1.98(VO)0.02, where TM = Fe Co, focusing particular role played by presence O vacancies nearby TM. The calculated total energy as a function moment per cell shows metastability, corresponding ground...

In this article, using first-principles electronic structure calculations within the spin density functional theory, alternated magnetic and non-magnetic layers of rutile-CrO2 rutile-SnO2 respectively, in a (CrO2)n(SnO2)n superlattice (SL) configuration, with n being number monolayers which are considered equal to 1, 2, ..., 10 studied. A half-metallic behavior is observed for SLs all values n. The ground state found be FM moment 2 μB per chromium atom, result does not depend on As unstable...

In this work, we present theoretical results, using first-principle methods associated to the virtual crystal approximation model, for vibrational mode frequencies of both Ga1−xMn x N (in cubic and hexagonal structures) As alloys, with Mn contents in range 0% 20%. The dependence calculated phonon content was analyzed, results indicate that decrease increasing composition, leading false impression they obey Vegard rule some cases. Moreover, alloys are elastically unstable concentrations at...

To gain a better understanding of the silicon oxidation process, we perform numerical simulation thermal thin-film growth. It is shown that rate in early stages growth governed by two processes: rapid initial formation front and its subsequent diffusion. The resulting provides rather good description experimental data with minimum number variable parameters, suggesting effect external parameters (such as temperature pressure) can be explained terms scaling concepts. results are also...

Spin polarization is a key characteristic in developing spintronic devices. Diluted magnetic heterostructures (DMH), where subsequent layers of conventional and diluted semiconductors (DMS) are alternate, one the possible ways to obtain it. Si being basis modern electronics, or other group-IV DMH can be used build devices directly integrated with ones. In this work we study physical properties spin-polarization effects p-type based (Si, Ge, SiGe, SiC), by performing self-consistent...

We discuss effects associated with dopant reduction and interface defects generated in p-type metal-oxide semiconductor (MOS) capacitors exposed to doses of low-energy x-ray radiation up 500 Mrad (Si). The dependence on dose, size, oxide charge trapped density suggests that the dopant-reduction behaviour is influenced by charges their during after irradiation. In particular, interfacial defect generation dynamics mechanisms tunnelling carriers at may be involved.

The radiation-induced interface traps in Metal/SiO2/Si capacitors where the oxides are grown dry O2+1.1.1.-trichloroethane (TCA) have been studied. Among all samples tested, a peak trap distribution above midgap (centered at ∼Eν +0.70–0.75 eV) appears immediately after irradiation, and magnitude of this is function amount TCA during oxide growth. After termination will either increase or decrease with time room temperature for few hours, followed by continuous over long period (up to several...

We discuss several aspects of the reliability physics silicon–polyaniline heterojunctions, such as degradation effects induced by local heating, charge trapping and temperature changes. The results further confirm quality devices electrical characteristics their suitability for radiation gas sensors applications.

The post-irradiation evolution of the interface traps in metal/SiO2/Si (MOS) capacitors after repeated x-ray irradiation has been investigated. results indicate that, immediately first irradiation, a characteristic peak (peak-1) energy distribution above midgap appears, which subsequently decreases with time storage at 75 °C. Accompanying this decrease is formation and growth second (peak-2) below midgap. Evidence will be presented suggests that due to an interfacial defect transformation...