A5030913772- Semiconductor materials and devices
- GaN-based semiconductor devices and materials
- Plasmonic and Surface Plasmon Research
- ZnO doping and properties
- Gold and Silver Nanoparticles Synthesis and Applications
- Electronic and Structural Properties of Oxides
- Nanowire Synthesis and Applications
- Copper-based nanomaterials and applications
- Advanced Memory and Neural Computing
- Optical Coatings and Gratings
- Silicon Nanostructures and Photoluminescence
- Thin-Film Transistor Technologies
- Ga2O3 and related materials
- Advancements in Semiconductor Devices and Circuit Design
- Thermal Radiation and Cooling Technologies
- Quantum and electron transport phenomena
- Surface and Thin Film Phenomena
- Advanced biosensing and bioanalysis techniques
Imperial College London
2017-2023
King's College London
2017
National Institute of Research and Development for Optoelectronics
2017
Using localized surface plasmon resonances (LSPR) to focus electromagnetic radiation the nanoscale shows promise of unprecedented capabilities in optoelectronic devices, medical treatments and chemistry, due a strong enhancement light-matter interactions. As we continue explore novel applications, require systematic quantitative method compare suitability across different geometries growing library materials. In this work, propose application-specific figures merit constructed from...
Titanium Oxynitride (TiOxNy) thin films are fabricated using reactive magnetron sputtering. The mechanism of their growth formation is explained and optical properties presented. grown when the level residual Oxygen in background vacuum was between 5E-9Torr to 20E-9Torr exhibit double Epsilon-Near-Zero (2-ENZ) behaviour with ENZ1 ENZ2 wavelengths tunable 700-850 nm 1100-1350 spectral ranges, respectively. Samples above 2E-8Torr non-metallic behaviour, while layers deposited below 5E-9Torr,...
We investigate titanium nitride (TiN) thin film coatings on silicon for CMOS-compatible sub-bandgap charge separation upon incident illumination, which is a key feature in the vast field of on-chip photodetection and related integrated photonic devices. Titanium tunable oxidation distributions serves as an adjustable broadband light absorber with high mechanical robustness strong chemical resistivity. Backside-illuminated TiN p-type Si (pSi) constitutes self-powered refractory alternative...
Understanding metal–semiconductor interfaces is critical to the advancement of photocatalysis and sub-bandgap solar energy harvesting where electrons in metal can be excited by photons extracted into semiconductor. In this work, we compare electron extraction efficiency across Au/TiO2 titanium oxynitride (TiON)/TiO2–x interfaces, latter case spontaneously forming oxide layer (TiO2–x) creates a contact. Time-resolved pump–probe spectroscopy used study recombination rates both cases. Unlike...
Abstract Strontium molybdate (SrMoO 3 ) thin films are grown epitaxially on strontium titanate (SrTiO ), magnesium oxide (MgO), and lanthanum aluminate (LaAlO substrates by pulsed laser deposition possess electrical resistivity as low 100 µΩ cm at room temperature. SrMoO is shown to have optical losses, characterized the product of Drude broadening, Γ D , square plasma frequency, ω pu 2 significantly lower than TiN, though generally higher Au. Also, it demonstrated that there a...
Titanium nitride (TiN) continues to prove itself as an inexpensive, robust, and efficient alternative gold in plasmonic applications. Notably, TiN has improved hot electron-harvesting photocatalytic abilities compared systems, which we recently attributed the role of oxygen its native semiconducting TiO2–x surface layer. Here, explore localized plasmon resonances (LSPRs) on electron harvesting across TiN/TiO2–x interface probe resilience nanostructures under high-power laser illumination. To...
In the search for alternative plasmonic materials, SrMoO 3 has recently been identified as possessing a number of desirable optical properties.Owing to requirement many devices operate at elevated temperatures however, it is essential characterize degradation these properties upon heating.Here, thin films are annealed in air ranging from 75 -500° C. Characterizations by AFM, XRD, and spectroscopic ellipsometry after each anneal identify loss metallic behaviour annealing 500° C, together with...
With similar optical properties to gold and high thermal stability, titanium nitride continues prove itself as a promising plasmonic material for high-temperature applications in the visible near-infrared. In this work, we use transient pump probe differential reflection measurements compare electron energy decay channels thin films. Using an extended two temperature model incorporate photoexcited electrons, it is possible separate electron-electron electron-phonon scattering contributions...
Titanium oxynitride enables a range of plasmonic and optoelectronic functionality using long-lived photo-generated hot carriers. We explore the time scale carriers in TiN their use photochemical reduction Schottky detectors.
Strontium molybdate (SrMoO3) thin films are shown to exhibit plasmonic behaviour with a zero crossover wavelength of the real part dielectric permittivity tunable between 600 and 950 nm (2.05 eV 1.31 eV). The grown epitaxially on strontium titanate (SrTiO3), magnesium oxide (MgO), lanthanum aluminate (LaAlO3) substrates by pulsed laser deposition. SrMoO3 is have optical losses lower than those gold at point which equal -2, while possessing low electrical resistivity 100E-6 Ohm cm room...
Understanding metal-semiconductor interfaces is critical to the advancement of photocatalysis and sub-bandgap solar energy harvesting where photons can be excited extracted into semiconductor. In this work, we compare electron extraction efficiency across Au/TiO2 titanium oxynitride/TiO2-x interfaces, in latter case spontaneously forming oxide layer (TiO2-x) creates a contact. Time-resolved pump-probe spectroscopy used study recombination rates both cases. Unlike nanosecond lifetimes...
This Conference Presentation, "Oxide-enhanced IR hot-carrier-based photo detection in metal thin-film Si junctions" was recorded at Photonics West 2020 held San Francisco, California, United States.