Sergey Zyryanov

ORCID: 0000-0003-1438-3631
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About
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Research Areas
  • Plasma Diagnostics and Applications
  • Metal and Thin Film Mechanics
  • Semiconductor materials and devices
  • Copper Interconnects and Reliability
  • Plasma Applications and Diagnostics
  • Diamond and Carbon-based Materials Research
  • Mass Spectrometry Techniques and Applications
  • Electrohydrodynamics and Fluid Dynamics
  • Gas Sensing Nanomaterials and Sensors
  • Analytical Chemistry and Sensors
  • Spectroscopy and Laser Applications
  • Atomic and Molecular Physics
  • Laser-induced spectroscopy and plasma
  • Laser Design and Applications
  • Dust and Plasma Wave Phenomena
  • Power Transformer Diagnostics and Insulation
  • Ion-surface interactions and analysis
  • Electrostatic Discharge in Electronics
  • Advanced Surface Polishing Techniques
  • Thin-Film Transistor Technologies
  • Particle accelerators and beam dynamics
  • Magnetic confinement fusion research
  • Muon and positron interactions and applications
  • Advancements in Photolithography Techniques
  • Electron and X-Ray Spectroscopy Techniques

Lomonosov Moscow State University
2015-2024

Moscow Institute of Physics and Technology
2022

Institute of Spectroscopy
2022

Institute of Nuclear Physics
2020-2022

Southern Federal University
2022

City Clinical Hospital
2020

Peoples' Friendship University of Russia
2019

John Wiley & Sons (Germany)
2018

National Medical and Surgical Center named after N.I. Pirogov
2015

ECSI Fibrotools (United States)
2012

The applicability of actinometry for measuring the absolute concentration O, N and F atoms in discharge plasma was studied. For this purpose, concentrations these were measured downstream an ICP by means method appearance potential mass-spectrometry (APMS). Comparison results showed good agreement between two methods. Since excitation cross sections electron states O(3p 3P) 5P) applied are well tested, allows using APMS calibration theoretical atoms. As a result, total atomic levels N(3p...

10.1088/1361-6463/50/7/075202 article EN Journal of Physics D Applied Physics 2017-01-23

The recombination of O (3P) atoms on the surface a Pyrex tube containing DC glow discharge in pure O2 was studied over wide range pressure (0.2–10 Torr) and current (10–40 mA) for two fixed temperatures (+50 °C +5 °C). probability, γ, deduced from observed atom loss rate (dominated by recombination) determined time-resolved optical emission actinometry partially-modulated (amplitude ∼15%–17%) discharges. value γ increased with at all pressures studied. As function it passes through minimum...

10.1088/1361-6595/ab13e8 article EN Plasma Sources Science and Technology 2019-03-27

The interaction of oxygen atoms with three types plasma enhanced chemical vapor deposition low-k SiOCH films is studied. samples were treated by O in the far afterglow conditions a special experimental system designed for this study. allowed avoiding effect ions and vacuum ultraviolet (VUV) photons on surface reactions controlling atom concentration over samples. Fourier-transform infrared spectroscopy, x-ray fluorescence, atomic force microscopy techniques used to analyze changes occurring...

10.1063/1.3486084 article EN Journal of Applied Physics 2010-10-01

Abstract A low-frequency capacitively coupled radio-frequency (rf) discharge in Ar excited at 1.76 MHz is studied both experimentally and theoretically. Experimental measurements of electron concentration, voltage current are presented for a wide range rf input powers. The shape nonsinusoidal, close to the triangle one. evolution Ar(2p1) emission excitation function interelectrode gap during an cycle measured using phase-resolved optical spectroscopy technique. Theoretical study based on...

10.1088/0022-3727/45/1/015201 article EN Journal of Physics D Applied Physics 2011-12-09

Modification of ultra-low-k films by extreme ultraviolet (EUV) and vacuum (VUV) emission with 13.5, 58.4, 106, 147 193 nm wavelengths fluences up to 6 × 1018 photons cm−2 is studied experimentally theoretically reveal the damage mechanism most ‘damaging’ spectral region. Organosilicate glass (OSG) organic low-k k-values 1.8–2.5 porosity 24–51% are used in these experiments. The Si–CH3 bonds depletion as a criterion VUV OSG films. It shown that described two fundamental parameters:...

10.1088/0022-3727/47/2/025102 article EN Journal of Physics D Applied Physics 2013-12-11

Low-pressure RF plasma in fluorohydrocarbon gas mixtures is widely used modern microelectronics, e.g. the etching of materials with a low dielectric constant (low-k) materials). The multifold experimental and theoretical study radio frequency capacitively coupled at 81 MHz Ar/CF4/CHF3 has been carried out 50 mTorr 150 pressures. A wide set diagnostics together hybrid PIC MC model calculations were applied to detailed plasmas. Measurements F atoms, HF molecules CFx radicals, electron density,...

10.1088/1361-6595/aa72c9 article EN Plasma Sources Science and Technology 2017-05-12

Removal of amorphous carbon and tin films from a Mo:Si multilayer mirror surface in hydrogen plasma its afterglow is investigated. In the afterglow, mechanism Sn C removal solely driven by atoms (radicals). Probabilities H were measured. It was shown that radical also dominant for because low ion energy flux. Unlike Sn, ion-stimulated provides much higher rate.

10.1063/1.4709408 article EN Journal of Applied Physics 2012-05-01

The interaction of F atoms with porous SiOCH low-k films at a temperature ~ 14 °C is studied both experimentally and theoretically. Samples different ultra-low-k k-value from 1.8 to 2.5 porosity 51 24% were exposed in the far downstream an SF6 inductively coupled plasma discharge. changes occurring composition chemical bonds as function exposing dose using various techniques such Fourier transform infrared spectroscopy, x-ray photoelectron energy-dispersive spectroscopy spectroscopic...

10.1088/0022-3727/48/17/175203 article EN Journal of Physics D Applied Physics 2015-03-31

This work deals with the study of oxygen atom loss on a quartz surface in glow discharge plasma pure O 2 at increased pressures (5–50 Torr). probabilities are obtained from radial distributions dissociation degree measured by actinometry method. It is shown that applicability method high requires knowledge spatial distribution reduced electric field for correct calculation electronic excitation rates and actinometer atoms. The analysis data within framework simple phenomenological model...

10.1088/0022-3727/44/1/015201 article EN Journal of Physics D Applied Physics 2010-12-08

Degradation of chemical composition porous low-k films under extreme and various vacuum ultraviolet emissions is studied using specially developed sources. It shown that the most significant damage induced by Xe line emission (147 nm) in comparison with Ar (106 nm), He (58 Sn (13.5 emissions. No direct was detected for 193 nm emission. Photoabsorption cross-sections photodissociation quantum yields were derived four study. 147 photons penetrate deeply into due to smaller photoabsorption...

10.1063/1.4795792 article EN Applied Physics Letters 2013-03-18

Ozone production in an oxygen glow discharge a quartz tube was studied the pressure range of 10–50 Torr. The O 3 density distribution along diameter measured by UV absorption spectroscopy, and ozone vibrational temperature T V found comparing calculated ab initio spectra with experimental ones. It has been shown that mainly occurs on surface whereas is lost centre where contrast electron atom densities are maximal. Two models were used to analyse obtained results. first one kinetic 1D model...

10.1088/0022-3727/44/1/015202 article EN Journal of Physics D Applied Physics 2010-12-08

An ab initio approach with the density functional theory (DFT) method was used to study F atom interactions organosilicate glass (OSG)-based low-k dielectric films. Because of complexity and significant modifications OSG surface structure during interaction radicals etching, a variety reactions between groups thermal atoms can happen. For film etching damage, we propose multi-step mechanism based on DFT static dynamic simulations, which is consistent previously reported experimental...

10.1088/0022-3727/49/34/345203 article EN Journal of Physics D Applied Physics 2016-07-28

Abstract We present a detailed study of the density and kinetics O 2 (b 1 Σ g + ) in steady-state partially-modulated DC positive column discharges pure for gas pressures 0.3–10 Torr 10–40 mA current. The time-resolved was determined by absolutely-calibrated optical emission spectroscopy (OES) A-band at 762 nm. Additionally, VUV absorption using Fourier-transform spectrometer DESIRS beamline Synchrotron Soleil, allowing absolute calibration OES to be confirmed. O( 3 P) atoms were detected...

10.1088/1361-6595/ac7749 article EN Plasma Sources Science and Technology 2022-06-01

The etch mechanism of porous SiOCH-based low-k films by F atoms is studied. Five types ultra-low-k (ULK) SiOCH with k-values from 1.8 to 2.5 are exposed in the far downstream an SF6 inductively coupled plasma discharge. evolution etching dose was studied using various techniques surface and material analysis such as FTIR, XPS, EDS SE. It revealed that connected fluorination formation –CHxFy species on due H abstraction –CH3 groups. shown includes two phases. first one observed at low doses...

10.1088/0022-3727/48/17/175204 article EN Journal of Physics D Applied Physics 2015-03-31

An analytical approach allowing to analyze effect of porosity, pore size, and interconnectivity on dielectric constant organosilicate based low-k materials is developed. Within the framework this approach, a good agreement between calculated experimentally measured constants for several porogen (template) glasses films demonstrated. It shown that best k-values corresponds structure with CH3 groups localized wall surface. The results also demonstrate recently published similar analysis...

10.1116/1.4946838 article EN Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena 2016-04-18

Energy distribution and the flux of ions coming on a surface are considered as key-parameters in anisotropic plasma etching. Since direct ion energy (IED) measurements at treated during processing often hardly possible, there is an opportunity for virtual ones. This work devoted to possibility such indirect IED rf-biased electrode low-pressure rf by using “virtual sensor” which represents “in-situ” calculations absolute scale accordance with sheath model containing set measurable external...

10.1063/1.4956455 article EN Physics of Plasmas 2016-07-01

In this work, experimental and theoretical study of pulsed discharge in argon has been carried out. The data on the dynamics electron density, temperature, plasma potential have obtained by probe measurements (using hairpin Langmuir probes) afterglow between two RF pulses. This is thoroughly analyzed comparison with results kinetic PIC MC simulations. main processes that cause cooling revealed for different time stages. first stage characterized rapid decrease temperature. During stage,...

10.1088/1361-6595/ab5adb article EN Plasma Sources Science and Technology 2019-11-22

Abstract The chemical kinetics of oxygen atoms and ozone molecules were investigated in a fully-modulated DC discharge pure gas borosilicate glass tube, using cavity ringdown spectroscopy (CRDS) the optically forbidden O( 3 P 2 )→O( 1 D ) absorption at 630 nm. Measurements made over range tube temperatures (10 °C 50 °C) pressures (0.5–4 Torr) current (10–40 mA). was square-wave modulated (on for 0.2 s off s), allowing build-up to steady-state decay afterglow be studied. This paper focusses...

10.1088/1361-6595/acf956 article EN Plasma Sources Science and Technology 2023-09-01

The interaction of O and H atoms with SiOCH nanoporous low-dielectric-constant (low-k) films is studied in the far plasma afterglow absence ion photon fluxes on surface. loss probabilities are directly measured by plasma-induced actinometry. Modification low-k during experimental scans was Fourier transform infrared spectroscopy technique. model O- H-atom recombination materials developed to analyze data. It shown that main mechanism their surface recombination. consumption these reactions...

10.1109/tps.2009.2023991 article EN IEEE Transactions on Plasma Science 2009-09-01

The effect of low-pressure He plasma on properties nanoporous organosilicate glasses low-k films with 24% and 33% open porosity is studied. influence ions, VUV radiation, metastable atoms are extracted separately using a special experimental system designed for this purpose. treated in were exposed to O or H the downstream high-pressure O2 H2 rf discharge. changes chemical composition structure occurring measured before after all treatments. loss probabilities oxygen hydrogen film surface...

10.1063/1.3549733 article EN Journal of Applied Physics 2011-02-15

A method is presented for the determination of absolute densities O(3P) atoms and O2(a1Δg) molecules in an O2 electrical discharge, which does not depend on any calibration procedure or knowledge optical transition strengths. It based observing recovery dynamics O2(X3Σg−) density afterglow a fully-modulated demonstrated dc glow discharge pure О2 at pressures 0.2–4 Torr. The time-resolved was measured by VUV absorption spectroscopy using monochromator branch DESIRS beamline Synchrotron...

10.1088/1361-6595/abb5e7 article EN Plasma Sources Science and Technology 2020-09-07

Thermal and PECVD deposited silicon dioxide organosilicate low-k materials with porosity from 24 to 44% corresponding k values 2.5 2.0 were sputtered in dual frequency inductive discharge by argon ions energies 16 200 eV. The film thickness was measured process laser ellipsometry controlled before after plasma treatment spectroscopic ellipsometry. Sputtering rate yield dependencies on ion energy measured. It shown that SiO2 sputtering threshold is significantly lower (<10 eV) than the beam...

10.1088/1361-6463/aa9c18 article EN Journal of Physics D Applied Physics 2017-11-21

Ion-assisted surface processes are the basis of modern plasma processing. Ion energy distribution (IED) control is critical for precise material modification, especially in atomic-level technologies such as atomic layer etching. Since this should be done real time, it requires real-time feedback using fast process sensors. In general case an industrial reactor, when direct IED measurement not possible, can estimated concept a virtual sensor. paper, similar sensor considered asymmetric...

10.1088/1361-6595/abf71b article EN Plasma Sources Science and Technology 2021-04-12
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