This study aimed to investigate the effects of COVID-19 on prevalence acute stress disorder and subsequent career planning among healthcare students. A cross-sectional survey was conducted 1158 students across five medical universities in February 2020. Acute assessed using Stanford Stress Response Questionnaire. Further data regarding knowledge, individual behaviours, occupational choices, were collected. Based results Questionnaire, divided into high-risk low-risk groups for disorder. The...

Accurate prediction of air quality index is a challenging task, in order to solve the gradient problem traditional neural network methods time series process as well improve accuracy, study proposes hybrid quantum model based on activation function. The utilizes classical convolutional tap into spatial correlations between different periods and combines it with function so better avoid death RELU for feature extraction, then uses long short term memory capture observations at times....

Several states were proposed as candidates for the $\ensuremath{\nu}=5/2$ quantum Hall plateau. We suggest an experiment which can determine physical state. The proposal involves transport measurements in geometry with three edges connected by two point contacts. In contrast to interference experiments, this approach distinguish Pfaffian and anti-Pfaffian well different identical or statistics. is not sensitive fluctuations of number quasiparticles trapped system.

Spin and charge currents can be generated by an ac voltage through a one-channel quantum wire with strong electron interactions in static uniform magnetic field. In certain range of low voltages, the spin current grow as negative power bias decreases. The expressed units hbar/2 per second become much larger than second. system requires neither spin-polarized particle injection nor time-dependent fields.

This paper presents a microscopic theory for spin-polarized tunneling in the FM/I/FM junction under finite applied voltage. A significant decrease of magnetoresistance (TMR) with increasing bias is obtained from theory. We note that spin-dependent prefactor transmission coefficient plays an important role tunneling. In particular, bias-dependent quantum-coherence factor...

In the framework of free-electron approximation, we have developed a quantum mechanical treatment for describing bias dependent tunneling in FM/I/FM ferromagnetic junctions. our theory, Slonczewski model is extended to include effect. barrier region, Wentzel–Kramers–Brillouin wave function used following Harrison. The main point match functions at both sides electrode/barrier interfaces mechanically. We find that apart from usual density states effect, there exists coherent factor...

Abstract Accurate prediction of urban air quality is vital importance in preventing pollution and improving the life residents. In order to achieve more accurate quality, this study proposes a novel hybrid quantum neural network model that combines an improved complete ensemble empirical mode decomposition with adaptive noise (ICEEMDAN) long short-term memory (QLSTM) optimized by particle swarm optimization (PSO) algorithm.This focuses on using QLSTM mine time-real fluctuations historical...

Certain diabolical points in the tunneling spectrum of single-molecule magnet Fe${}_{8}$ were previously believed to be have been eliminated as a result weak fourth-order anisotropy. As shown by Bruno, this is not so, and are only displaced magnetic field space along medium anisotropy direction. The missing numerically located following lines Berry curvature. importance an experimental search for these rediscovered discussed.

Thermal annealing is an important process to enhance greatly the tunneling magnetoresistance (TMR) of magnetic tunnel junctions (MTJs). MTJ conventionally carried out in vacuum below 10−5Torr. However, this method involves cost and complications using a furnace. Pumping venting chamber are time-consuming; moreover, sample temperature difficult measure accurately therefore not easy control. We have developed instrument perform thermal MTJs air. The based on protective overlayers, has simple...

We present a finite temperature theory for bias-dependent tunnelling in ferromagnetic junctions. The effects of the barrier width d on magnetoresistance (TMR) and its sign change behaviour are discussed with this theory. Numerical results show that both zero-bias TMR critical voltage Vc at which changes decrease increasing considerably thick junction. Furthermore, it is found minimum exists curve versus if composite junction under oxidized.

In this paper, we study the effects of temperature and electron effective mass within barrier on bias dependence sign-change behaviour tunnelling magnetoresistance (TMR) in ferromagnetic junctions. A significant decrease with increasing is obtained, accordance experiments. addition to height potential (ϕ) discussed our previous papers, (mB) region found be another important factor that physically controls TMR. The critical voltage (Vc) at which TMR changes sign will increase ϕ mB....

This paper reviews the method of bosonization for one-dimensional interacting fermions. Example its application to mesoscopic systems is presented with an explicit calculation spin and charge currents in quantum wire subject a uniform magnetic field alternating voltage source. Special emphasis given details using Keldysh techniques.

Magnetic tunnel junctions (MTJs) with structures of Ta(5 nm)/Cu(30 nm)/Ta(5 nm)/Ni79Fe21(5 nm)/Ir22Mn78 (12 nm)/Co62Fe20B18(4 nm)/MgO(d)/Al(0.8 nm)-oxide/Co62Fe20B18(6 nm) on a thermally oxidized Si wafer substrate were fabricated by magnetron sputtering and photolithographic patterning method. The magnetoresistance (TMR) the bias dependence TMR at room temperature for MTJs different thickness d MgO are investigated. values over 50% as high those pure Al–O barrier TMR-voltage curve...

In this work, on the one hand, contact-shadow-mask method and technique were used to micro-fabricate magnetic tunnel junction (MTJ) optimize experimental conditions. The width of gap for long narrow top or bottom magneto-electrode is 100 μm, which can be deposit MTJs form a cross strip with section μm×100 μm. tunneling magnetoresistance (TMR) ratio 30%—48％ directly obtained structure Ta(5 nm)/Cu(25 nm)/Ni79Fe21(5 nm)/Ir22Mn78(10 nm)/Co75Fe25(4 nm)/Al(08 nm)-O/Co75Fe25(4 nm)/Ni79Fe21(20...

The magnetic tunnel junctions (MTJs) were prepared on Si [001] by using magnetron sputtering system. structures of the MTJs are Si/FeNi/Cu/FeMn/Co/barrier/Co/Cu barrier hybrids: AlO/sub x//ZrO/sub x/ and ZrO/sub x//AlO/sub x/. as a was also studied for comparison. Negative tunneling magnetoresistance (TMR) observed in hybrid barrier. TMR shows strong asymmetric bias dependence changes from 8% at around zero to -4% high bias. negative is due not only energy spin-DOS but shape MTJs. mechanism...

Magnetic tunnel junctions (MTJs) with different sizes from 5μm×5μm to 15μm×60μm were fabricated on 4_inch Si/SiO_2 substrates. Their mag netoelectronic properties investigated using the four_probe measuring system. The typical values of junction resistance_area product and tunneling netoresistance (TMR) ratio MTJs are 16 kΩμm^2and 18% respectively. absolut eerrors TMR within 10% 7% respectively for all MTJs. All measured show a good uniformity. Our experimental results that such can be used...

Four types of pinned magnetic tunnel junctions (MTJs) with threekeylayer structures Py/Al2O3/Py,Py/Al2O3/Co,Co/Al2O3/Py,Co/Al2O3/Co were fabricated using a contact shadow mask method and an antiferromagnetically layer Ir22Mn78.The slit width the is 100μm, composition permalloy Py＝Ni79Fe21.For example, MTJs Co/Al2O3/Co tunneling magnetoresistance (TMR) ratio 17.2%, junction resistance 76?Ω, area product RS 760?kΩμm2, freelayer reversal field 1114A·m-1 defined as where TMR rises to 50%...

The directed transport of inertial Lévy flights resulting from the superimposed roughness in a corrugated potential is investigated this paper. influence on studied by calculating mean velocity (MV) and first escape time (MFET), with respect to index [Formula: see text] asymmetry parameter which determines potential. results indicate that particles’ caused will be counteracted roughness, behaves as absolute value MV decreases increasing, MFET increases correspondingly. Though smaller can...