L. Ya. Sadovskaya

ORCID: 0000-0003-1585-8766
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About
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Research Areas
  • Solid-state spectroscopy and crystallography
  • Crystal Structures and Properties
  • Optical and Acousto-Optic Technologies
  • Photorefractive and Nonlinear Optics
  • Transition Metal Oxide Nanomaterials
  • Thermography and Photoacoustic Techniques
  • Catalysis and Oxidation Reactions
  • High-pressure geophysics and materials
  • Solid State Laser Technologies
  • TiO2 Photocatalysis and Solar Cells
  • Gas Sensing Nanomaterials and Sensors
  • Spectroscopy and Laser Applications
  • X-ray Diffraction in Crystallography
  • Catalytic Processes in Materials Science
  • Advanced Semiconductor Detectors and Materials
  • Advanced Photocatalysis Techniques
  • Pigment Synthesis and Properties
  • Nanomaterials for catalytic reactions
  • Silicone and Siloxane Chemistry
  • Wireless Sensor Networks for Data Analysis
  • Magnetic and Electromagnetic Effects
  • Plant and Biological Electrophysiology Studies
  • Smart Grid Energy Management
  • Polyoxometalates: Synthesis and Applications
  • Material Science and Thermodynamics

Belarusian State University
2016-2024

National Academy of Sciences of Belarus
2019

Oles Honchar Dnipro National University
1993-2018

University of Latvia
1980

Georgi Nadjakov Institute of Solid State Physics
1980

Azerbaijan National Academy of Sciences
1979

Abstract Single crystals Bi2TeO5 samples have been used for measurements of the dielectric constant, loss and electrical conductivity over a wide range temperature (20−400°C), frequencies (2.102−5.107 Hz) fields (103−107 V/m). For three crystallographic directions constants at room are εa = 62, εb 70, εc 36 gradually increase with in temperature. There relaxation maxima tan δ σ∼ dependence. Voltage-current curves obey to laws space charge limited currents. The low values carrier mobility μef...

10.1080/00150198808201352 article EN Ferroelectrics 1988-06-01

Data from measurements of current-voltage characteristics, dark conductivity and optical transmission on samples undoped B-doped, Czochralski-grown Bi2TeO5 single crystals are reported. The experimental results show that in observed temperature field ranges the charge transport processes these conditioned by localized states associated with impurity atoms. Keywords: Bismuth telluritecurrent-voltage characteristiccurrent injectionhopping

10.1080/00150199808220257 article EN Ferroelectrics 1998-06-01

Abstract The Bi2TeO5 polar phase (sp.gr.Abm2) is found to be changed centrosymmetric orthorombic one in the result of a first-order transition. This fully reversible transition spread over interval 780–820°C. Very strong dielectric relaxation at preceding temperatures related with oxygen vacancies redistribution crystal lattice. Upper temperature distinctive by its pronounced electric conductivity supposedly anionic nature.

10.1080/00150190008225005 article EN Ferroelectrics 2000-03-01

The optica1 properties and the domain structure of ferroelastic crystals MTe2O5 (M = Ca, Sr, Cd) type were investigated. Three groups domains two types walls (W W') observed. analysis observed permissible boundaries in these allow to reveal six orientation states. transition 6/mmm - 2/m is predicted on basis data obtained. correlation lattice constants gives an idea possible connection between hypothetical prototype hexagonal monoclinic one.

10.1080/00150198308227846 article EN Ferroelectrics 1983-10-01

Study of electrophysiological indicators the condition and behavior plants has become more important in development farming activities search for effective ways to improve productivity crops. The influence external light on adaptive ability corn leaf cells rhythmic cold stimulation was determined experimentally. method is not adequate studied plants, but its application allows us evaluate stability plant stimuli. consists repeating irritation during time period less duration than relative...

10.15421/021728 article EN cc-by Regulatory Mechanisms in Biosystems 2017-04-26

The photoconductivity in the wide intervals of temperatures and wavelengths were studied photorefractive Bi2TeO5 single crystals. It is supposed that optical memory crystals may be connected with deep local levels participating electron processes photoconductivity.

10.1080/00150199508216937 article EN Ferroelectrics 1995-12-01

The current-voltage characteristics (I-V ) of non-stoichiometric bismuth tellurite crystals were studied in a range temperatures from 150 • C to 350 and fields up 2.5 kV/cm with asymmetric contacts (In-Ga eutectic Na2SiO3).The I-V curves observed monopolar injection are described by the approximation space charge limited currents.In composition 47% Bi2O3-53% TeO2 electronic conduction is prevailed.In 43% Bi2O3-57% conductivity contributed electrons holes.The spectrum local states band gap...

10.12693/aphyspola.133.940 article EN cc-by Acta Physica Polonica A 2018-04-01

Министерство науки и высшего образования Российской Федерации Федеральное государственное бюджетное образовательное учреждение «Тверской государственный университет» ФИЗИКО-ХИМИЧЕСКИЕ АСПЕКТЫ ИЗУЧЕНИЯ КЛАСТЕРОВ, НАНОСТРУКТУР И НАНОМАТЕРИАЛОВ МЕЖВУЗОВСКИЙ СБОРНИК НАУЧНЫХ ТРУДОВ

10.26456/pcascnn/2018.10.683 article RU cc-by-nc-nd Physical and Chemical Aspects of the Study of Clusters Nanostructures and Nanomaterials 2018-12-15

The results of the real twinning investigations in pure ferroelastic calcium and cadmium dietllurites are given. study experimental domain structure confirms predicted 6/mmF2/m phase transition. crystallographic method for calculations adjacent rotation angles is considered. vectors [image omitted] 15 possible combinations two domains CdTe2O5 Notes This work was presented at Ill-d national seminary on physics ferroelastics (Kharkov,USSR, May 1985).

10.1080/00150198708009031 article EN Ferroelectrics 1987-12-01

10.15802/ecsrt2017/137707 article EN ELECTROMAGNETIC COMPATIBILITY AND SAFETY ON RAILWAY TRANSPORT 2017-10-17

Spectral dependences of optical absorption coefficient the bismuth tellurite single crystals grown by Chohralsky method have been observed. The investigations were carried out on fresh-prepared samples different thickness after annealing up to 400 degrees Celsius in air and vacuum also illumination intensive light with various wavelengths. value forbidden band for indirect transition (E<SUB>gi</SUB>) is approximately 3.11 eV at room temperature it decreases about 10<SUP>-3</SUP>eV multiplied...

10.1117/12.239218 article EN Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE 1996-04-29
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