D.P. Rusalsky

ORCID: 0000-0003-1638-0899
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About
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Research Areas
  • Metal and Thin Film Mechanics
  • Diamond and Carbon-based Materials Research
  • Ion-surface interactions and analysis
  • Advanced materials and composites
  • Metal Alloys Wear and Properties
  • Advanced Surface Polishing Techniques
  • Tribology and Wear Analysis
  • Semiconductor Quantum Structures and Devices
  • Material Properties and Applications
  • High-pressure geophysics and materials
  • Advanced Semiconductor Detectors and Materials
  • Silicon Carbide Semiconductor Technologies
  • Carbon Nanotubes in Composites
  • Chalcogenide Semiconductor Thin Films
  • Advanced machining processes and optimization
  • Surface Treatment and Coatings
  • Lubricants and Their Additives
  • Magnetic Field Sensors Techniques

Belarusian State University
2002-2021

Laboratoire de physique des Solides
2021

10.1615/hightempmatproc.2025057529 article EN High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes 2025-01-01

Plasma immersion (PI3) ion implantation of AISI M2 steel by nitrogen was carried out. The voltage 40 kV and the doses varied in range 2–8×1018 ions/cm2. It is established that hardness increases up to 25 GPa, friction coefficient decreases factor 2 wear resistance enhanced a 10 after PI3. explained formation highly doped face-centered-cubic γ-Fe(N,C) phase due local tempering surface. total concentration carbon this about at. %.

10.1116/1.590665 article EN Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena 1999-03-01

In the present work, influence of deposition temperature InSb films on semi-insulating GaAs(100) their phase composition, crystal perfection and electrical properties was investigated. The various extent are formed by means explosive thermal substrates in range 375–460 °C. X-ray diffraction analysis established that heteroepitaxial. It is shown an increase from 375 to 460 °C leads a change film surface roughness (Ra) 3.4 19.1 nm. Hall voltage sensitivity magnetic field varies 500–1500 mV/T....

10.33581/2520-2243-2021-3-20-25 article EN cc-by-nc Journal of the Belarusian State University Physics 2021-10-20
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