A5103183939- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Silicon and Solar Cell Technologies
- Semiconductor materials and interfaces
- Advanced Memory and Neural Computing
- Conducting polymers and applications
- Quantum Dots Synthesis And Properties
- Integrated Circuits and Semiconductor Failure Analysis
- Perovskite Materials and Applications
- Organic Electronics and Photovoltaics
- TiO2 Photocatalysis and Solar Cells
- Chalcogenide Semiconductor Thin Films
- Ferroelectric and Negative Capacitance Devices
- Semiconductor Quantum Structures and Devices
- Advanced Photocatalysis Techniques
- Advanced Antenna and Metasurface Technologies
- Copper-based nanomaterials and applications
- ZnO doping and properties
- Electronic and Structural Properties of Oxides
- Antenna Design and Analysis
- Neuroscience and Neural Engineering
- Transition Metal Oxide Nanomaterials
- Gas Sensing Nanomaterials and Sensors
- Nanowire Synthesis and Applications
Zhejiang Normal University
2015-2024
Jinhua Academy of Agricultural Sciences
2020
Institute of Physics, Academia Sinica
1985
Abstract Low bandgap lead–tin (Pb–Sn) mixed perovskite solar cells have achieved high power conversion efficiency in excess of 17%. However, methylammonium (MA) cation is usually contained, and the thermal stability MA always a great concern. In this work, according to composition engineering, nearly formamidinium (FA) based low‐bandgap Pb–Sn FAPb 0.75 Sn 0.25 I 3 being tried explore as absorber layer. Combined with interface engineering by replacing...
Although tin halide perovskite has shown excellent photoelectric performance, its efficiency of solar cell is low compared with that lead halide. In order to enhance the cell, a deep understanding role defects in absorption layer and at electron transport (ETL)/absorber or absorber/hole (HTL) interface very necessary. this work, planar heterojunction-based CH3NH3SnI3 cells were simulated SCAPS-1D program. Simulation results revealed great dependence device on defect density quality absorber....
Abstract A metal-oxide-semiconductor heterostructure is a prominent solid-state device used extensively in photo detection and logic operations. The insulating dielectric layer crucial for the device's performance. When operated under dynamic high electric field conditions, leakage current due to Fowler-Nordheim tunneling oxide, leads power consumption. injection of hot carriers into oxide can create pin-holes cause breakdown, further degrading characteristics.
In this study, we...
The power conversion efficiency (PCE) of narrow‐bandgap Pb–Sn‐alloyed perovskite solar cells (PVSCs) is seriously impeded by the large open‐circuit voltage () deficit. Finding an effective approach to passivate defects in film critical reduce Herein, a linear organic cation 1,3‐propanediammonium iodide (PDAI 2 ) used surface film, thus restraining nonradiative recombination. After treating with PDAI , defect density decreased half and carrier lifetime prolonged more than 1.5 times. As...
Inorganic halide perovskite quantum dots (IHP QDs) have been widely studied in optoelectronic devices because of their size-dependent tunable bandgaps, long electron-hole diffusion lengths and excellent absorption properties. Herein, a novel floating-gate organic field-effect transistor memory (FGOFETM) is demonstrated, comprising IHP QDs embedded polystyrene matrix. Notably, the FGOFETM exhibits photoinduced-reset characteristic that allows data removal by photo irradiation. This feature...
Pentacene/non-fullerene acceptor heterojunction type phototransistors were fabricated for broadened spectral photoresponsivity and ultralow level light detection.
SiON films with different oxygen concentrations were fabricated by reactive magnetron sputtering, and the resistive switching characteristics conduction mechanism of Cu/SiON/ITO devices investigated. The device deposited in 0.8-sccm O flow shows a reliable behavior, including good endurance retention properties. As conductivity increases increase content dynamical electron trapping detrapping is suggested to be mechanism. temperature dependent I–V measurement indicates that carrier transport...
Achieving a high‐quality heterojunction interface (HEI) and absorber is crucial for the efficient Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells. Herein, an alternative feasible passivation strategy aiming to harness synergistic effects (SPE) by introducing CuAlO (CAO) into HEI developed. During selenization process, interdiffusion of elements occurs between CAO, resulting in anticipated inversion electrical properties from p‐ n‐type shallow bulk enabling construction homogeneous field passivation....
Recently, antimony-doped tin oxide nanoparticles (ATO NPs) have been widely used in the fields of electronics, photonics, photovoltaics, sensing, and other because their good conductivity, easy synthesis, excellent chemical stability, high mechanical strength, dispersion low cost. Herein, for first time, a novel nonvolatile transistor memory device is fabricated using ATO NPs as charge trapping sites to enhance performance. The resulting organic nano-floating gate (NFGM) exhibits outstanding...
A novel tri‐layer film photoelectrode structure of DSSC by introducing Eu 3+ and Er ions into TiO 2 was proposed. The photoelectric conversion efficiency the with : / electrode reaches 7.41%, increased a factor 1.44 compared to that without doping. higher for is mainly attributed down‐conversion luminescence effect from ultraviolet light visible up‐conversion infrared light.
SnOx thin film was deposited by reactive magnetron sputtering and the resistance switching behavior of Ag/SnOx/ITO investigated. The endurance testing indicates that HRS decreases with an increase in number cycles. After annealing, memory performance is enhanced, ratio device LRS increases greatly. abnormal transformation sequence from to observed for annealed can be explained electron trapping detrapping based on analysis x-ray diffraction Raman spectrum. temperature-dependent I−V...
A simple theoretical model is proposed to quantitatively explain the dependence of photocurrent spectra for multiple quantum-well (MQW) p-i-n diode on absorption coefficient and applied reverse bias. Excellent agreement obtained between calculation experimental a 30-period 15-nm Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.85</sub> Ge xmlns:xlink="http://www.w3.org/1999/xlink">0.15</sub> /15-nm MQW diode, where background doping density...