Thermal runaway is among the major failure mechanisms of power semiconductor packages. dissipation electronics depends on quality solder die-attach, any defects such as voids, and delamination-impede heat that results in hot spots can cause thermal and/or a premature device failure. Therefore, investigation impact due to die-attach indispensable for improved performance reliability. In this paper, transient dual interface measurement used characterize path electronic package consisting an...

An ultra dense trench technology is reported in this paper. This advanced employs a fully self-aligned contact process. As result, the cell pitch of 30 V trench-gated power MOSFETs has been reduced to 1.1 um. The specific on-resistance (including source metal spreading resistance) median die size device 0.18 mohm.cm/sup 2/ at gate voltage 10 V. tradeoffs, which are given towards optimization device's on-resistance, "Miller" charge, and breakdown voltage, presented.

Bias Temperature Instability (BTI) measurements were performed on SiC n-channel DMOSFETs. The effects of the BTI stress electrical characteristics device studied using slow and fast measurements. Measurements show that change in threshold voltage (Vth) can be attributed to charge carrier trapping/de-trapping at border traps, while interface trapped density is found unaffected. measurements, however, shows significant Vth recovery taking place in-situ during measurement. Moreover, shift...

In this work we compared AC and DC bias temperature instability (BTI) degradations induced by stressing the channel Junction-FET regions in 4H polytype n-channel Silicon Carbide (SiC) based power MOSFETs. We observed that degradation caused BTI stress is dependent on device technology generation unlike degradation, which found to be independent of generation. Also, causes more permanent damage due creation interface traps border contrast where only are responsible for degradation.

Abstract In this study we performed slow and fast bias temperature instability (BTI) measurements on n-channel silicon carbide (SiC) metal-oxide-SiC field effect transistors. Threshold voltage ( V th ) shifts as well recovery observed during after stress applied at different temperatures levels were used to understand the dynamics of charge trapping/capture detrapping/emission gate oxide defects. It is deduced from results that no new defects are created by in due injected electron capture...

A systematic study of self heating caused by hot-carrier (HC) stress in packaged thick gate oxide HV LDMOS devices (Laterally Diffused MOSFETs), and how significantly affects HC degradation characteristics is presented. The time delay between the removal parameter measurement affected measured Idlin/Rdson with longer times resulting less observed Idlin degradation. We show recovery was mostly due to effects, as opposed interface trapped charge related recovery. at wafer level different...

We have performed bipolar AC stress on commercially available 4H polytype silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). observed threshold voltage and subthreshold swing (SS) instabilities that are dependent signal frequency amplitudes. The dependencies explained in terms of carrier emission/capture induced interfacial traps.

High-temperature reverse-bias (HTRB) stress in a dry or humid ambient is applied to power n-channel U-shaped trench-gated MOSFET (UMOSFETs). The HTRB shown induce negative-bias temperature instabilities (NBTI) parasitic p-channel occurring the UMOSFET during stress. manifestations of NBTI were gate-controlled shifts threshold voltage, V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> , and drain-to-source leakage current, I...

This paper discusses three important practical issues in hot carrier (HC) reliability of Laterally Diffused MOSFETs (LDMOSFETs) or high voltage MOSFET (HVMOSFETs) Bipolar-CMOS-DMOS (BCD) technology. One the main encountered during development LDMOSFET HVMOSFET is optimizing trade-offs between specific on-resistance (Rdson) and degradation. We developed a new LDMOS/HVMOS structure which HC degradation has been significantly reduced without sacrificing Rdson. The second issue how to reduce...

In a series of articles, we consider the effects microstructure and associated anisotropy Sn grains on electromigration in lead-free solder bumps. this article, carried out experiments to characterize microstructures tin-based bumps investigate their electromigration-induced failure. Accelerated tests electron backscatter diffraction (EBSD) are performed wafer-level chip-scale packages (WLCSPs). EBSD analysis, together with results time failure from accelerated tests, provides valuable...

This paper studies the microstructure effects on electromigration in lead-free solder joints wafer level chip scale package (WL-CSP). It is an extension of earlier isotropic model [1]. The three dimensional finite element for developed and analyzed ANSYS <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">®</sup> . A sub-modeling technique combined with indirect coupled electrical-thermal-mechanical analysis utilized to obtain more accurate...

This paper reports on self heating caused by hot-carrier (HC) stress in packaged thick gate oxide HV LDMOS devices, and how significantly affects HC degradation characteristics. The time delay between the removal of parameter measurement after each cycle affected measured Idlin/Rdson degradation. For a longer time, lower Idlin was observed. difference, or recovery, with mainly due to effect. from effect seems be more than LNDMOS. Based data, some methods are proposed eliminate effect,...

For the plasma process induced damage (PID) qualification of fabrication processes, stresses are necessary to detect lifetime reduction risks. JEDEC JEP001 requires Hot Carrier Stress (HCS), Bias Temperature (BTS), Time Dependent Dielectric Breakdown (TDDB) stresses, or a revealing stress for this detection. Due large number devices that should be tested in comprehensive qualification, quickly applied is preferable. This paper reviews two main options thick oxides: constant gate current...

This paper reports two methods to reduce HC degradation in high voltage LNDMOS device without sacrificing the breakdown and Rdson BCD technology. The first method modifies front end process by forming a thick oxide drift region-I. modification is achieved with simple layout change Experimental data shows this has significantly improved LNDMOS. second back processes adding unique SiN barrier layer which we believe reduces plasma induced damage on We demonstrate can improve hot carrier performance

In this paper, we discuss strategies to reduce hot carrier (HC) effects on two different high voltage MOSFET devices types. One type is an LDMOS device which a lateral device, and the other shielded gate trench power (SGTM) vertical device. These types are widely used for applications such as switch-mode supplies, amplifiers DC/DC supplies. HC injection has significant both types' performance. For SGTM, have found that in device's off-state can strongly affect BV <sub...

The elastic and plastic anisotropy of β-Sn has an important effect on the stress state, hence electromigration induced degradation in Sn-based solder joints. A crystal plasticity model is developed to capture this effect. Calibration done by using available literature data. Future refinement slip parameters needed optimize model. implemented a finite element framework used simulate response single strains. This work can be as basis for future development coupled models solders.

This paper investigates the electromigration prediction and test for a 0.18μm power technology in wafer level reliability interconnect structure. The driving force induced failure considered here includes electron wind force, stress gradients, temperature as well atomic density gradient. Both chemical-mechanical planarization (CMP) non-CMP devices are investigated. Parameters of different barrier metal thicknesses studied. simulation also gives effect comparison with without consideration...

In this paper, we obtained interface trap density through source-drain CP (charge pumping) current, instead of conventional substrate current in MOSFETs and LDMOS. We observed that is same for both source drain when LOCOS (local oxidation Silicon) field oxide used to separate (body) different channel MOSFETs. However, higher than modern STI (shallow trench isolation) the The difference between I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...

In this paper, we develop a constant current avalanche injection stress method for evaluating BV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DSS</sub> instability in shielded gate trench MOSFETs, low/medium voltage power transistor technology used broad range of applications. We show test is very sensitive to the BVDSS charge balance devices whereas traditional HTRB (high temperature reverse bias) reliability cannot capture issue. The new...

the paper summarizes both analytical and numerical considerations as well experimental data of low voltage (50 V) trench MOSFET in unclamped (UIS) self-clamped (SCIS) inductive switching applications. The herein presented summarize failure mechanisms that ultimately limit UIS / SCIS rating a device once all other design factors are exploited.

A finite element-based simulation approach is used to predict stress evolution resulting from electromigration-induced diffusion. diffusion-mechanical coupled model developed where the electromigration and stress-induced diffusion mechanical equilibrium with an introduction of induced inelastic strain. crystal plasticity constitutive capture plastic anisotropy Sn. The problem solved using a staggered at each time step. Simulations are conducted on simplified geometry single Sn cylinder...