A5005337353- Advanced Antenna and Metasurface Technologies
- Antenna Design and Analysis
- GaN-based semiconductor devices and materials
- Metamaterials and Metasurfaces Applications
- Semiconductor materials and devices
- Ga2O3 and related materials
- Silicon Carbide Semiconductor Technologies
- Semiconductor Quantum Structures and Devices
- Thermal properties of materials
- RFID technology advancements
Indian Institute of Technology Bombay
2024
Indian Institute of Information Technology Design and Manufacturing Jabalpur
2019-2020
The quest of novel materials and structures to design an efficient absorber for realizing wave trapping absorption at terahertz (THz) frequencies is open topic. But the a thin, wideband, tunable THz still arduous job. Hence, in this paper, hybrid metamaterial integrated with cascaded graphene frequency selective surface (FSS), ultra-high absorbance over wide range designed using analytical equivalent circuit model. Such approach provides feasible way optimize device by interrelating...
We report high‐power InGaN back‐barrier AlGaN/GaN high electron mobility transistors with the gate placed closer to source an Au‐filled groove in SiC substrate near drain end. An is known reduce short‐channel effects at drain‐to‐source ( V DS ) voltage. However, improvement realized cost of reduced two‐dimensional gas density n s and saturation I DS,SAT current. Here, we demonstrate that both are recovered when appropriately delineated source. The junction temperature increases higher DS,...
Determining junction temperature and two-dimensional profile is critical for high-power GaN-based high electron mobility transistors to optimize performance, improve device reliability, better thermal management. Here, we have demonstrated that resistance detectors of the same material as gate contact delineated between gate-to-source gate-to-drain regions can accurately along channel. The asymmetric skewed toward drain side, degree asymmetry used determine effective length experimentally. A...
Abstract This work demonstrates the improvement in DC and RF characteristics a reduction gate leakage current for thermally grown Nb 2 O 5 as dielectric AlGaN/GaN metal–oxide–semiconductor high electron-mobility transistors (MOS-HEMTs). The MOS-HEMTs with an amorphous 10 nm thick show reduced of −9 A mm −1 . thin film creates tensile strain AlGaN layer, enhancing density two-dimension electron gas (2-DEG). performance device also improves terms saturation drain current, peak...
Silicon nitride (SiN x ) is used for device passivation and capacitance dielectric in GaN monolithic microwave integrated circuits. However, this a conflicting requirement as requires SiN to cause tensile strain, primarily demands high breakdown voltage large constant , leading damaged AlGaN surface during deposition. Two independent depositions under two different conditions (silicon‐ nitrogen‐rich) are usually carried out meet both requirements. Herein, solution unified deposition through...