A5090408938- Radio Frequency Integrated Circuit Design
- Advanced Power Amplifier Design
- Microwave Engineering and Waveguides
- Advanced MIMO Systems Optimization
- Advanced Wireless Network Optimization
- Wireless Communication Networks Research
- Antenna Design and Analysis
- GaN-based semiconductor devices and materials
- Energy Harvesting in Wireless Networks
- Wireless Power Transfer Systems
- Advanced DC-DC Converters
- Millimeter-Wave Propagation and Modeling
- Advanced Wireless Communication Techniques
- Electromagnetic Compatibility and Noise Suppression
Uppsala University
2024
University of Science and Technology Beijing
2016-2019
Millimeter-wave antennas are one of the key parts in 5G systems due to its useful properties such as ultra wideband and high transmission rate. In this paper, research microstrip millimeter wave patch antenna at 28 GHz is proposed. The resonant frequency shifted expanding bandwidth through slotting patch. Meanwhile, adding punish function fitness proposed develop improve desired frequency. slot position obtained by genetic algorithm (GA). Furthermore, using numerical array synthesis, a...
Abstract This paper introduces an innovative conceptual design of a 400 kW solid-state power amplifier (SSPA) station and presents preliminary measurements for the key components. Recent advancements benefits technology have made prospect replacing vacuum tubes increasingly appealing. Historically, significant challenge was limited output capacity individual transistors, necessitating integration numerous units to generate high-power microwave signals in range hundreds kilowatts. However,...
This paper demonstrates a systematic approach for the design of broadband, high efficiency, power, Class-AB RF amplifiers with gain flatness. It is usually difficult to simultaneously achieve flatness and efficiency in broadband power amplifier, especially design. As result, use computer-aided simulation most often best way these goals; however, an appropriate initial value are necessary results rapidly converge. These objectives can be accomplished minimum trial error through following...
In this article, simulation and implementation of a 10 watt class-AB pulse power amplifier using LDMOS transistor in 1.2-1.4 GHz is presented. Class-AB RF commonly used wireless communication industry because it offers an acceptable compromise between linearity efficiency. Load pull source software utilities are employed to obtain the optimum input output impedances device. Afterwards, matching networks based on low pass Chebyshev filter were designed optimized via computer aided simulation....
In this article, simulation and implementation of a 30 watt high efficient class-AB RF pulse power amplifier using GaN transistor in 1.2-1.4 GHz is presented. Class-AB widely used wireless communication industry due to acceptable compromise between linearity efficiency. Load pull utility provided Agilent Design System software employed obtain the optimum load impedance while input matched with S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
In this paper, the design of a broadband, high-efficiency, and high-linearity Class-J GaN HEMT RF power amplifier (PA) over 1.6-2.6GHz is explained.The source impedance conjugatematched to input device resulted from small signal simulation make high-gain amplifier.The load related maximum added efficiency (PAE) output obtained by pulling only fundamental second harmonic components frequency bandwidth.Thus, not high-efficiency PA but also formed.The matching networks are implemented...
A compact design for a 2.5 kW solid-state power amplifier (PA) based on 330-W laterally diffused metal–oxide semiconductor transistors over 1.2–1.4 GHz is proposed. The procedure started with the and implementation of unit (UA) independently. Optimum load source impedances UA are obtained by pulling aid simulator utility provided in Advanced Design System. input–output matching networks designed implemented using multi-section microstrip transmission lines. In order to construct 2.5-kW high...