A5090736275- Advanced Semiconductor Detectors and Materials
- Semiconductor Quantum Structures and Devices
- Infrared Target Detection Methodologies
- Chalcogenide Semiconductor Thin Films
- Spectroscopy and Laser Applications
- Advanced Optical Sensing Technologies
- Calibration and Measurement Techniques
- Thermography and Photoacoustic Techniques
- Machine Learning in Materials Science
- Advanced X-ray and CT Imaging
- Nanowire Synthesis and Applications
- Radiation Detection and Scintillator Technologies
- 2D Materials and Applications
- Semiconductor materials and interfaces
- Advanced Sensor Technologies Research
- Quantum Dots Synthesis And Properties
- Photonic and Optical Devices
- Terahertz technology and applications
- Topological Materials and Phenomena
- Graphene research and applications
- Optical Systems and Laser Technology
- Perovskite Materials and Applications
- Photorefractive and Nonlinear Optics
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Semiconductor Devices and Circuit Design
Military University of Technology in Warsaw
2016-2025
Shanghai Institute of Technical Physics
2023-2025
AGH University of Krakow
2024
Bydgoszcz University of Science and Technology
2024
University of Warmia and Mazury in Olsztyn
2023
Infrared Laboratories (United States)
2023
The Ohio State University
2021-2022
American University in Cairo
2014
University of Southern Denmark
2014
Weierstrass Institute for Applied Analysis and Stochastics
2014
Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation P. Martyniuk, J. Antoszewski, M. L. Faraone, A. Rogalski; New concepts in infrared photodetector designs. Appl. Phys. Rev. 1 December 2014; (4): 041102. https://doi.org/10.1063/1.4896193 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar...
Investigations of antimonide-based materials began at about the same time as HgCdTe ternary alloys—in 1950s, and apparent rapid success their technology, especially low-dimensional solids, depends on previous five decades III-V device research. However, sophisticated physics associated with bandgap engineering concept started beginning 1990s gave a new impact interest in development infrared detector structures within academic national laboratories. The InAs/GaSb type-II superlattices...
Abstract In 1959, Lawson and co-workers publication triggered development of variable band gap Hg1−xCdxTe (HgCdTe) alloys providing an unprecedented degree freedom in infrared detector design. Over the five decades, this material system has successfully fought off major challenges from different systems, but despite that it more competitors today than ever before. It is interesting however, none these can compete terms fundamental properties. They may promise to be manufacturable, never...
Since the discovery of graphene, its applications to electronic and optoelectronic devices have been intensively thoroughly researched. Extraordinary unusual optical properties make graphene other two-dimensional (2D) materials promising candidates for infrared terahertz (THz) photodetectors. Until now, however, 2D material-based performance is lower in comparison with those detectors existing global market. This paper gives an overview emerging material detectors' traditionally commercially...
The cryogenic cooling of infrared (IR) photon detectors optimized for the mid- (MWIR, 3–5 µm) and long wavelength (LWIR, 8–14 range is required to reach high performance. This a major obstacle more extensive use IR technology. Focal plane arrays (FPAs) based on thermal are presently used in staring imagers operating at room temperature. However, their performance modest; exhibit slow response, multispectral detection difficult reach. Initial efforts develop temperature (HOT) photodetectors...
Abstract Avalanche or carrier-multiplication effect, based on impact ionization processes in semiconductors, has a great potential for enhancing the performance of photodetector and solar cells. However, practical applications, it suffers from high threshold energy, reducing advantages carrier multiplication. Here, we report low-threshold avalanche effect stepwise WSe 2 structure, which combination weak electron-phonon scattering electric fields leads to low-loss acceleration Owing this...
Abstract The low subthreshold swing (SS) below the Boltzmann thermionic limitation (60 mV dec −1 ) is crucial for development of power‐efficient transistors. Recently, impact ionization field‐effect transistors (II‐FETs), which leverage carrier avalanche multiplication, have emerged as an attractive method achieving ultra‐steep SS, high on‐state current density, and significant drain on‐off ratio. However, II‐FETs face challenges due to complex fabrication processes, hindering future array...
Abstract At present, uncooled thermal detector focal plane arrays are successfully used in staring imagers. However, the performance of detectors is modest, they suffer from slow response and not very useful applications requiring multispectral detection. Infrared (IR) photon typically operated at cryogenic temperatures to decrease noise arising various mechanisms associated with narrow band gap. There considerable efforts system cost, size, weight, power consumption increase operating...
This paper presents a response time/time constant of III-V material-based interband long wavelength multistage infrared detector optimized for 10.6 µm at 200 K. The device is based on the InAs/InAsSb type-II superlattice with highly doped p+/n+ tunneling junctions among stages. exhibits time 9.87 ns under zero voltage condition, while 0.15 V reverse bias, that decreases to approximately 350 ps. presented shows significant increase in time, especially low and −0.2 V, decrease detector’s by an...
Investigation of the performance quantum dot infrared photodetectors (QDIPs) in comparison to other types operated near room temperature is presented. The model based on fundamental limitations enabling a direct between different material technologies. It assumed that due thermal generation active region. Theoretical estimations provide evidence QDIP suitable for noncryogenic operation especially long-wavelength region, where conventional HgCdTe photodiodes are not viable. Hence it expected...