- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Nanowire Synthesis and Applications
- 2D Materials and Applications
- ZnO doping and properties
- Gas Sensing Nanomaterials and Sensors
- Graphene research and applications
- Carbon Nanotubes in Composites
- MXene and MAX Phase Materials
- Transition Metal Oxide Nanomaterials
- Advanced Fiber Optic Sensors
- Photonic and Optical Devices
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Thin-Film Transistor Technologies
- Perovskite Materials and Applications
- Advanced Sensor and Energy Harvesting Materials
- Advanced Fiber Laser Technologies
- Silicon Carbide Semiconductor Technologies
- Force Microscopy Techniques and Applications
- Molecular Junctions and Nanostructures
- Nanofabrication and Lithography Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Electronic and Structural Properties of Oxides
- Ga2O3 and related materials
Korea University
2016-2025
Samsung (South Korea)
2024
Korea Advanced Institute of Science and Technology
2002-2023
Cornell University
2023
Kootenay Association for Science & Technology
2023
University of California, Santa Barbara
2023
Inha University Hospital
2023
Gyeongsang National University
2011-2022
Chonnam National University
2020-2021
Sookmyung Women's University
2020
If they could be easily exfoliated, layered materials would become a diverse source of two-dimensional crystals whose properties useful in applications ranging from electronics to energy storage. We show that compounds such as MoS(2), WS(2), MoSe(2), MoTe(2), TaSe(2), NbSe(2), NiTe(2), BN, and Bi(2)Te(3) can efficiently dispersed common solvents deposited individual flakes or formed into films. Electron microscopy strongly suggests the material is exfoliated layers. By blending this with...
We investigated the reduction of current fluctuations in few-layer black phosphorus (BP) field-effect transistors resulting from Al2O3 passivation. In order to verify effect passivation on device characteristics, measurements and analyses were conducted thermally annealed devices before after More specifically, static low-frequency noise used monitoring charge transport characteristics devices. The carrier number fluctuation (CNF) model, which is related trapping/detrapping process near...
Semiconducting 2D MoS2 flakes produced by liquid phase exfoliation are contacted with metal electrodes, which defined electron beam lithography. Electrical analysis of the metal–semiconductor–metal structures reveals high mobilities for individual flakes. Thus, scalable liquid-phase layered semiconductor compounds can yield novel materials potential uses in future electronic devices.
In this study, we report on the development of a stretchable, transparent, and skin-attachable strain sensor integrated with flexible electrochromic device as human skin-inspired interactive color-changing system. The consists spin-coated conductive nanocomposite film poly(vinyl alcohol)/multi-walled carbon nanotube/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) polydimethylsiloxane substrate. exhibits excellent performance high sensitivity, durability, fast response, transparency....
ZnO nanowires were grown between two Au electrodes on an Al2O3-deposited Si wafer. Photoresponse, photoresponse spectrum, and current–voltage (I–V) studies performed for the investigation into photoconduction mechanism in these nanowires. The of under continuous illumination light with above- or below-gap energies was slow, which indicates that photocurrent is surface-related rather than bulk-related. spectrum represents absorption bands photocurrents. I–V characteristics above-gap are...
ZnO nanorods were grown on SiO2/Si substrates by a sol-gel method at low temperatures of around T=95 °C. The diameters and the lengths increased high concentrations zinc nitrate hexahydrate methenamine solution. Current–voltage characteristics network followed typical nonlinear behavior with significant photoresponse below λ<400 nm in air, conductance was enhanced vacuum negligible photoresponse. In photoluminescence (PL) photocurrent (PC) spectra, PL peak (λpeak=380 3.26 eV) did not...
We report on the influence of structural disorder electrical properties multilayer graphene (MLG). Exponential decreases in conductance and transconductance with increase defects MLG were observed, which could be explained by percolation variable range hopping conduction. An enhancement p-type nature increasing disorders was considered to result oxygen doping sheets introduced plasma. The rapid low-frequency noise attributed formation conductive network through continuum percolation, as...
Photocurrent of a single ZnO nanowire synthesized by sol-gel route was investigated. In vacuum, the dark current bigger but photoresponse slower than that in air, attributed to release available charge carriers desorption water molecules and decrease exchange rates molecular ions. Under steady radiation ultraviolet light (λ=325nm), gradual photocurrent noticeable, which can be explained terms annihilation replacement hydroxyl groups (OH−) O2−, resulting carriers.
Diagnosing of the interface quality and interactions between insulators semiconductors is significant to achieve high performance nanodevices. Herein, low-frequency noise (LFN) in mechanically exfoliated multilayer molybdenum disulfide (MoS2) (~11.3 nm-thick) field-effect transistors with back-gate control was characterized without an Al2O3 high-k passivation layer. The carrier number fluctuation (CNF) model associated trapping/detrapping charge carriers at nicely described behavior strong...
The photoresponse characteristics of metal-oxide (MeO) semiconductor photosensors have been studied. Compared to the amorphous-Si-based photo-TFT, MeO photo-TFT demonstrates superior EQE and responsivity. However, due its inherent slow recovery dark state after illumination is stopped, a unique sensing scheme suitable for high-speed array operation used, yet maintaining simple architecture as solution large-area interactive displays.
A TiO2/VO2 oxide double-layer nanocrossbar to overcome the sneak path problem in bipolar resistive memory is proposed. TiO2 and VO2 thin films function as a bidirectional switch, respectively. The new structure suggests that ultrahigh densities can be achieved with 2D array layout. By stacking into 3D structure, density even higher. Detailed facts of importance specialist readers are published "Supporting Information". Such documents peer-reviewed, but not copy-edited or typeset. They made...
A periodically modulated graphene (PMG) generated by nanopatterned surfaces is reported to profoundly modify the intrinsic electronic properties of graphene. The temperature dependence sheet resistivity and gate response measurements clearly show a semiconductor-like behavior. Raman spectroscopy reveals significant shifts G 2D modes induced interaction with underlying grid-like nanostructure. influence periodic, alternating contact substrate surface was studied in terms strain caused bending...
We present an amorphous Si anode deposited on a Cu nanopillar current collector, fabricated using thermal roll-to-roll process followed by electroformation and LPCVD, for application in high-rate Li-ion batteries. collectors with diameters of 250 500 nm were patterned periodically 1 μm pitch 2 height to optimize the pillars better electrochemical performance. Void spaces between nanopillars allowed not only greater effective control strain caused expansion during lithiation than that...
Various plasma treatment effects such as oxygen (O2), nitrogen (N2), and argon (Ar) on amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) are investigated. To study stoichiometry in a-IGZO TFTs with respect to various environments, X-ray photoelectron spectroscopy was employed. The results showed that vacancies were reduced by O2 N2 plasmas while they increased after Ar treatment. Additionally, the of trap distribution bulk surface channels explored means low-frequency...
A three-terminal top-gated flash device based on two-dimensional materials with a high coupling ratio exhibits highly linear synaptic weight updates.
Low-frequency noise in n-type junctionless multigate transistors was investigated. It can be well understood with the carrier number fluctuations whereas conduction is mainly limited by bulk expecting Hooge mobility fluctuations. The trapping/release of charge carriers related not only to oxide-semiconductor interface but also depleted channel. volume trap density range 6–30×1016 cm−3 eV−1, which similar Si–SiO2 and remarkably lower than high-k transistors. These results show that nanowire...
We developed a nanoneedle transistor-based sensor (NTS) for the selective detection of calcium ions inside living cell. In this work, single-walled carbon nanotube-based field effect transistor (swCNT-FET) was first fabricated at end glass nanopipette and functionalized with Fluo-4-AM probe dye. The binding onto dye molecules altered charge state molecules, resulting in change source-drain current swCNT-FET as well fluorescence intensity from demonstrated electrical concentration...
We extracted the interlayer resistance between two layers in multilayer molybdenum disulfide (MoS2) field-effect transistors by confirming that contact resistances (Rcontact) measured using four-probe measurements were similar, within ∼30%, to source/drain series (Rsd) two-probe measurements. Rcontact values obtained from gated exhibited gate voltage dependency. In measurements, Y-function method was applied obtain Rsd values. By comparing those (∼9.5 kΩ) and (∼12.3 strong accumulation...
Abstract Carbon nanotube networks showing superior electric properties, high chemical stability, strong mechanical and flexibility are also known to exhibit thermoelectric effects. However, the experimental figure of merit, ZT , pristine carbon nanotubes is typically in range 10 −3 –10 −2 which still not attractive for thermal energy conversion applications. In this work, we show possible ways improve properties single walled (SWCNTs) by means treatments. study, primarily investigated effect...