A5095044465- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
Shanghai Jiao Tong University
2024
The gradual, abrupt, and abnormal reset transitions have been experimentally demonstrated in resistive random access memories (RRAMs). Yet a compact model that could well explain reproduce the various observed phenomena is still under active exploration due to physical processes involved. In this study, we develop consistent for bipolar/unipolar RRAMs, which can comprehensively gradual abrupt transitions, as many during processes. These include reverse set (reset failure), gentle process...
Selectors are critical components for reducing the sneak path leakage currents in emerging resistive random-access memory (RRAM) arrays. Two-dimensional (2D) materials provide a rich choice of with van der Waals stacking to form heterostructure selectors controllable energy barriers. Here, we experimentally demonstrate 2D-material-based exponential current-voltage (