A5091412938- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- GaN-based semiconductor devices and materials
- Copper-based nanomaterials and applications
- Semiconductor materials and interfaces
- ZnO doping and properties
- Transition Metal Oxide Nanomaterials
- Supercapacitor Materials and Fabrication
- Conducting polymers and applications
- Gas Sensing Nanomaterials and Sensors
- Metal and Thin Film Mechanics
- Advanced battery technologies research
- Advancements in Battery Materials
- Electrocatalysts for Energy Conversion
- Advanced Sensor and Energy Harvesting Materials
- Ga2O3 and related materials
- Nanowire Synthesis and Applications
- Semiconductor materials and devices
- Liquid Crystal Research Advancements
- Perovskite Materials and Applications
- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Semiconductor Quantum Structures and Devices
- Semiconductor Lasers and Optical Devices
- Photonic and Optical Devices
Yeungnam University
2016-2025
Photonics (United States)
2002-2018
Daegu Gyeongbuk Institute of Science and Technology
2007
University of Strathclyde
2002-2005
Pohang University of Science and Technology
1995-1999
Using an appropriate SeS<sub>2</sub>/Se weight ratio, band gap grading was realized. By increasing the value of<italic>V</italic><sub>OC</sub>through in depletion region, a record<italic>V</italic><sub>OC</sub>deficit of 0.576 V and efficiency 12.3% were obtained.
Abstract For kesterite copper zinc tin sulfide/selenide (CZTSSe) solar cells to enter the market, in addition efficiency improvements, technological capability produce flexible and large-area modules with homogeneous properties is necessary. Here, we report a greater than 10% for cell area of approximately 0.5 cm 2 8% larger certified CZTSSe cells. By designing thin multi-layered precursor structure, formation defects defect clusters, particularly tin-related donor defects, controlled, open...
Abstract Facile control over the morphology of phase pure tin monosulfide (SnS) thin films, a promising future absorber for film solar cells, is enabled by controlling growth kinetics in vapor transport deposition congruently evaporated SnS. The pressure during found to be key factor modifying final shape SnS grains. optimized cube‐like shows p‐type with apparent carrier concentration ≈10 17 cm −3 an optical bandgap 1.32 eV. dense and flat surface 1 µm thick combined minimization pinholes...
Micro-light emitting diode (LED) arrays with diameters of 4 to 20 μm have been fabricated and were found be much more efficient light emitters compared their broad-area counterparts, up five times enhancement in optical power densities. The possible mechanisms responsible for the improvement performance investigated. Strain relaxation microstructures as measured by Raman spectroscopy was not observed, arguing against theories an increase internal quantum efficiency due a reduction...
Electrochromic materials allow for precise control of their optical properties by applying an electric field, which has led to recent developments in energy-saving and indoor temperature systems like smart windows. The selective incorporation metal dopants is effective technique generating highly advanced semiconducting oxides with precisely customized physicochemical characteristics. In this report, we employed a one-step electrodeposition process fabricate nickel-doped tungsten oxide...