A5039004711- Ion-surface interactions and analysis
- Semiconductor materials and devices
- Graphene research and applications
- 2D Materials and Applications
- Astrophysics and Cosmic Phenomena
- Dark Matter and Cosmic Phenomena
- Advanced Memory and Neural Computing
- Integrated Circuits and Semiconductor Failure Analysis
- Nuclear materials and radiation effects
- Nanopore and Nanochannel Transport Studies
- Electronic and Structural Properties of Oxides
- Physics of Superconductivity and Magnetism
- Ga2O3 and related materials
- Ferroelectric and Negative Capacitance Devices
- ZnO doping and properties
- Advanced Condensed Matter Physics
- High-pressure geophysics and materials
- MXene and MAX Phase Materials
- Neutrino Physics Research
- Radiation Effects in Electronics
- Perovskite Materials and Applications
- Copper-based nanomaterials and applications
- Carbon Nanotubes in Composites
- Radiation Therapy and Dosimetry
- Polymer Nanocomposite Synthesis and Irradiation
Chinese Academy of Sciences
2015-2025
Institute of Modern Physics
2015-2024
University of Chinese Academy of Sciences
2015-2024
Nanjing Agricultural University
2023
University of Palermo
2021
University of Sassari
2021
Beijing Normal University
2019
Renmin University of China
2019
Zinc oxide (ZnO) materials irradiated with 350 MeV 56Fe21+ ions were studied by Raman spectroscopy, Photoluminescence spectra (PL) and Transmission electron microscope (TEM). After ion irradiation, a strong oxygen vacancy (Vo) related defect absorption peak at 576 cm−1 an interstitial zinc (Zni) -related 80 cm−1~200 formed, the increase of dose, was obviously enhanced. Through theoretical calculation, different incident light test methods wereused to determine (Vo). There no significant...
The electrical characteristics and microstructures of $\beta$-Ga$_2$O$_3$ Schottky barrier diode (SBD) devices irradiated with swift heavy ions (2096 MeV Ta ions) have been studied. It was found that SBD showed the reliability degradation after irradiation, including turn-on voltage Von, on-resistance Ron, ideality factor n reverse leakage current density Jr. In addition, carrier concentration drift layer decreased significantly calculated removal rates were 5*106 - 1.3*107 cm-1. Latent...
In ferromagnet/heavy metal heterostructures, critical current density (JC) refers to the minimum required generate spin–orbit torque (SOT) for effective magnetization manipulation, including switching of and moving domain walls magnetic skyrmions. This is a key factor next-generation SOT-based random access memory, racetrack logic devices. this work, thermal stability Pt/Co/Ta heterostructures in response ion irradiation are studied. It found that represents promising approach wide tuning...
Graphene and thin graphite films deposited on SiO2/Si are irradiated by swift heavy ions (209Bi, 9.5 MeV/u) with the fluences in a range of 1011 ions/cm2–1012 ions/cm2 at room temperature. Both pristine samples investigated Raman spectroscopy. For films, "blue shift" 2D bond "red G decrease thickness found spectra. both graphene disorder-induced D peak D' detected fluence above threshold Φth. The thinner film, lower Φth is. In this work, thicker than 60 nm reveal defect free via absence...
The amorphous latent tracks in β-Ga2O3 single crystal irradiated with ∼5–10 MeV u−1 181Ta and 86Kr ions were investigated by transmission electron microscopy (TEM). TEM images showed that the mean diameter of increased from 2.2 to 8.8 nm electronic energy loss (Se) values increasing 18.3 41.5 keV nm−1. Moreover, inelastic thermal spike model was used predict track size. calculation results agreed well experimental predicted Se threshold formation about 17 nm−1 for 5–10 heavy ions.
Extending the fabrication methodology of solid-state nanopores in a wide range materials is significant fields single molecule detection, nanofluidic devices, and nanofiltration membranes. Here, we demonstrate new method to directly fabricate size- density-controllable sub-10 nm WO3 nanosheets using swift heavy ions (SHIs) without any chemical etching process. By selecting different electronic energy losses (Se), with sizes from 1.8 7.4 can be created nanosheets. The creation efficiency...
The reliability degradation of HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based devices under heavy ion irradiation is still an open question. In this letter, the ultrathin amorphous gate stacks were irradiated by different types swift ions (SHIs). fine structure latent track in crystalline phase along particle trajectory. effects on electrical properties characterized high frequency capacitance-voltage (C-V) and leakage...
The various morphologies of tracks in MoS 2 irradiated by swift heavy ions at normal and 30° incidence with 9.5–25.0 MeV/u 86 Kr, 129 Xe, 181 Ta, 209 Bi were investigated transmission electron microscopy. diameter ion increases from 1.9 nm to 4.5 increasing electronic energy loss. loss threshold the track formation is predicted as about 9.7 keV/nm based on thermal spike model it seems consistent experimental results. It shown that morphology related penetration length . process discussed...
The emergence of monolayer transition metal dichalcogenides (TMDCs) has provided a favorable platform for exploring broad range novel optoelectronic device applications and quantum phenomena due to their remarkable physical chemical characteristics. Understanding the motion excitons in TMDCs is fundamental interest devices. Here, we demonstrate exciton WS2 that can be fine-tuned by swift heavy ion (SHI) irradiation. dependence trion emissions on SHI irradiation as-transferred as-grown was...
Unique characteristics of transition metal dichalcogenides (TMDCs) such as their tunable band gap and ultra-thin body thickness make them potential candidates for applications in optoelectronic, gas sensing energy storage devices. In this work, 1.8 GeV Ta ions at different ion fluences ranging from 1 × 109 cm−2 to 6 1010 were used introduce amorphous defective regions, latent tracks, MoSe2 study the electronic transport behavior irradiated TMDC-channel field-effect transistors (FETs)....
Polycrystalline samples of La 2 Zr O 7 pyrochlore are irradiated by different energetic heavy ions to investigate the dependence vibrational mode variations on irradiation parameters. The applied electronic energy loss (d E /d x ) e increases from about 5.2 keV/nm 39.6 keV/nm. ion fluence ranges 1 × 10 11 ions/cm 6 15 . Vibrational modes analyzed using Raman spectrum. Infrared active F 1u at 192, 308, and 651 cm −1 appear in spectra, 2g band 265 rises up due 200-MeV Kr with 16.0 Differently,...
Endoplasmic reticulum (ER) is an important organelle in eukaryotic cells and participates the synthesis secretion of various proteins, glycogen, lipids, cholesterol substances.It surrounded by a single membrane cytoplasm, which three-dimensional mesh structure formed flat cysts, tubes, bubbles.Research on physiological morphology ER can facilitate resolution certain metabolic diseases.Due to good optical properties outstanding specific localization, fluorescent probe technology has been...
Understanding and facilitating defects in two-dimensional transition metal dichalcogenides (TMDCs) are of fundamental importance for their application optoelectronic devices valleytronic devices. In this study, swift heavy ion (SHI) irradiation was applied to introduce monolayer WSe2 a controlled manner. Temperature-dependent photoluminescence transient absorption spectroscopy employed investigate the excitonic performances defective WSe2. It is observed that trion emission rises up...
Two-layer monoclinic (2M) muscovite mica sheets with a thickness of 12 μm are irradiated Sn ions at room temperature electronic energy loss (dE/dx)e 14.7 keV/nm. The ion fluence is varied between 1×1011 and 1×1013 ions/cm2. Structural transition in investigated by x-ray diffraction (XRD). main peaks shift to the high angles, inter-planar distance decreases due swift heavy (SHI) irradiation. Dehydration takes place during SHI irradiation one-layer (1M) structure thought be generated 2M after...