A5088412809- Transition Metal Oxide Nanomaterials
- Fusion materials and technologies
- Ga2O3 and related materials
- Magnetic confinement fusion research
- 2D Materials and Applications
- Gold and Silver Nanoparticles Synthesis and Applications
- Nanowire Synthesis and Applications
- Nuclear Materials and Properties
- Thin-Film Transistor Technologies
- Gas Sensing Nanomaterials and Sensors
- Quantum, superfluid, helium dynamics
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Sensor Technology and Measurement Systems
- Laser-Plasma Interactions and Diagnostics
- Nuclear reactor physics and engineering
- Organic Electronics and Photovoltaics
- Thermodynamic and Structural Properties of Metals and Alloys
- High-Energy Particle Collisions Research
- Advanced Memory and Neural Computing
- MXene and MAX Phase Materials
- Perovskite Materials and Applications
- Electronic and Structural Properties of Oxides
- High-pressure geophysics and materials
Mount Holyoke College
2021
Vanderbilt University
2013-2017
Rensselaer Polytechnic Institute
2011
Gettysburg College
2011
Using femtosecond time-resolved photoelectron spectroscopy we demonstrate that photoexcitation transforms monoclinic VO$_2$ quasi-instantaneously into a metal. Thereby, exclude an 80 structural bottleneck for the photoinduced electronic phase transition of VO$_2$. First-principles many-body perturbation theory calculations reveal high sensitivity bandgap to variations dynamically screened Coulomb interaction, supporting fully electronically driven isostructral insulator-to-metal transition....
We calculate quarkonium binding energies using a realistic complex-valued potential for both an isotropic and anisotropic quark-gluon plasma. determine the disassociation temperatures of ground first excited states considering real imaginary parts energy. show that effect momentum-space anisotropy is smaller on part energy than In case one assumes plasma, we find J/psi, Upsilon chi_b 1.6 T_c, 2.8 1.5 respectively. finite oblate increases temperature all considered results in splitting p-wave...
Electronic stopping of slow protons in ZnO, ${\mathrm{VO}}_{2}$ (metal and semiconductor phases), ${\mathrm{HfO}}_{2}$, ${\mathrm{Ta}}_{2}{\mathrm{O}}_{5}$ was investigated experimentally. As a comparison the resulting cross sections (SCS) to data for ${\mathrm{Al}}_{2}{\mathrm{O}}_{3}$ ${\mathrm{SiO}}_{2}$ reveals, electronic does not correlate with properties specific material such as band gap energies. Instead, oxygen $2p$ states are decisive, corroborated by density functional theory...
Two-dimensional (2D) semiconductors are expected to have exceptional properties for ultimately scaled transistors, but forming ohmic contact them has been challenging, which tremendously limit the transistor performance. In this paper, we review recent research progress on elimination of different gap-state pinning effects, including defect-induced gap states (DIGS) and metal-induced (MIGS). Specifically, an oxygen passivation method a semimetallic technology were developed reduce DIGS MIGS,...
The appearance of stripe phases is a characteristic signature strongly correlated quantum materials, and its origin in phase-changing materials has only recently been recognized as the result delicate balance between atomic mesoscopic properties. A vanadium dioxide (VO2) single crystal one such material with phases. Infrared nano-imaging on low-aspect-ratio, single-crystal VO2 microbeams decorated resonant plasmonic nanoantennas reveals novel herringbone pattern coexisting metallic...
A proof-of-concept demonstration of switchable plasmon-induced transparency is presented in gold (Au) dolmen structures on a vanadium dioxide (VO2) thin film. The were made by combination high-resolution electron-beam lithography VO2 films deposited evaporation. 100 nm (160 meV) modulation the plasmon resonance structure due to phase transition observed. width factor 2–3 narrower than what was observed for Au nanodisks film previous studies, interference between bright and dark modes...